臺灣博碩士論文加值系統

隨著元件尺寸的縮小，元件速度主要受限於訊號在金屬連線間傳送的時間延遲，為了改善此問題，低介電常數材料的導入成為必要的選擇。本研究係探討以電漿輔助化學氣相沉積法成長之氟化非晶相碳膜，在半導體低介電常數材料應用上之研究，本論文設計了一系列薄膜沉積製程參數，針對氟化非晶相碳膜的基本性質、熱穩定性進行薄膜物性、電特性的探討，最後並以氮氣、氫氣電漿處理進行薄膜表面改質，以改善氟化非晶相碳膜/銅導線結構在高溫退火後電特性劣化的問題。
在基本性質方面，實驗結果顯示以C4F8/CH4為反應氣體所沉積之氟化非晶相碳膜，其介電常數介於2.2~2.9之間，而漏電流密度在1MV/cm的電場強度下，介於5.37E-9~6.88E-8 A/cm之間，具有良好的電特性。經過材料分析後，發現氟化非晶相碳膜的組成氟/碳比與薄膜沉積製程參數具有密切的關係，且影響薄膜特性甚鉅。在熱穩定性方面，發現薄膜特性除了受氟化非晶相碳膜的組成氟/碳比影響外，並與薄膜內網狀鏈結程度有著密切的關係，隨著結構愈鬆散，電特性劣化的程度也愈明顯。
在經過電漿處理後，發現氟化非晶相碳膜經過氮氣電電漿處理後，會在薄膜表面形成一氮化物層，使得薄膜親水性的增加，此效應造成氮氣電漿後薄膜介電常數與漏電流密度的增加，但由於氮化物層的形成，使得薄膜抗銅擴散性的提昇，能有效抑制氟化非晶相碳膜在高溫退火後電特性的劣化。而經過氫氣電漿處理後，由於解離後的氫離子與薄膜內懸浮鍵結合，使得薄膜穩定性提高，介電常數與漏電流密度均能有效降低，並提昇氟化非晶相碳膜的熱穩定性。

Interconnect delay is a factor of performance limiting for ULSI circuits when feature size is scaled to deep submicron region. Using low dielectric constant materials for the interlayer insulator is an effective way to solve the RC time delay.
Fluorinated amorphous carbon films (a-C:F) is one of intensively studied low-k materials concerning its basic properties, thermal stability and integration-related issue. In this paper, we have investigated effects of process parameter to the properties of a-C:F. The results shows that the dielectric constant of a-C:F is from 2.2 to 2.9, and the leakage current density is from 5.37E-9 to 6.88E-8 A/cm (at 1MV/cm). We founded that the intrinsic properties of a-C:F are effected by the F/C ratio of composition. The thermal stability is effected by the cross-linked of film.
After plasma treatment, the thermal stability of a-C:F is improved. The experiment results show that the nitride layer will be formed on the surface of a-C:F film after N2 plasma treatment. Due to the formation of nitride-like layer, the uptake of moisture will increase and lead to increasing of dielectric constant and leakage current density. But the nitride layer can against the diffusion of copper lead to the thermal stability is enhanced. Since the hydrogen atoms will bond with dangling bond of films, therefor the a-C:F films will be stabilized after H2 plasma treatment. The electrical properties and thermal stabilized will be improved respectively after H2 plasma treatment.
英文摘要……………………………………………………………...…II
誌謝…………………………………………………………………......III
總目錄………………………………………………………………......IV
圖目錄……………………………………………………………….....VII
表目錄……………………………………………………………...…XIV
第一章 緒論…………………………………………………...1
1-1 簡介……………………………………….…………………….1
1-2 低介電常數材料簡介…………………………….…………….4
1-3 論文組織與架構………………………………………….…….6
第二章 氟化非晶相碳膜的基本性質研究…………………...7
2-1 前言………………………………………………………….….7
2-2 實驗流程………………………………………………..……….7
2-2-1 晶片刻號……………………………………………..……..9
2-2-2 晶片清洗……………………………………..……………..9
2-2-3 氟化非晶相碳膜沉積………………………………..……..9
2-2-4 鋁金屬電極製備………………………………………..…11
2-2-5 電性量測………………………………………….……….11
2-2-6 物性量測……………………………………………….….12
2-3 結果與討論……………………………………………….……12
2-3-1 成膜理論…………………………………………….…….14
2-3-2 反應氣體流量比效應……………………………….…….17
2-3-3 RF功率效應……………………………………………23
2-3-4 製程壓力效應…………………………………….……….29
2-3-5 基板溫度效應………………………………….………….34
2-4 結論………………………………………………………….…40
第三章 氟化非晶相碳膜的熱穩定性研究…………………..42
3-1 前言…………………………………………………….………42
3-2 實驗流程……………………………………………………...…42
3-2-1 實驗流程…………………………………………………...42
3-2-2 熱脫附大氣壓力質譜儀…………………………………...43
3-3 結果與討論………………………………………………...……45
3-3-1 氟化非晶相碳膜各組成鍵結能………………………..….45
3-3-2 反應氣體流量比效應……………………………………...46
3-3-3 RF功率效應………………………………………………54
3-3-4 製程壓力效應……………………………..……………….62
3-3-5 基板溫度效應………………………………………..…….69
3-3 結論………………………………………………………….....77
第四章 電漿處理對氟化非晶相碳膜/銅導線結構電特性
之影響…………………………………………...…..81
4-1 前言………………………………………………………..…....81
4-2 實驗流程…………………………………………...……………82
4-3 結果與討論…………………………………………………...…84
4-3-1 氮氣電漿處理效應…………………………………...……...84
4-3-2 氫氣電漿處理效應…………………...……………………...98
4-4 結論…………………...…………….……………...…………..106
第五章 結論…………………………………………………110
5-1 結論………………………………………………...……….….110
5-2 未來工作展望……………………………………...…….…….116
參考文獻……………………….……………………………117

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