臺灣博碩士論文加值系統

本研究主要使用不同矽甲烷與氫氣混合比例之熱燈絲化學氣相沈積法快速沈積其矽膜並搭配鋁誘發技術(AIC)製備高品質多晶矽薄膜，並以此大晶粒之多晶矽薄膜當晶種層，往上快速沈積大晶粒多晶矽薄膜。在本論文中，我們探討鋁誘發結晶薄膜對於退火時間及溫度之間的變化，及在晶種層上以熱燈絲化學氣相法所沈積出矽膜之形態，更進一步利用X光繞射、拉曼量測、場發射電子顯微鏡、穿透式電子顯微鏡及霍爾量測分析每一層的多晶矽薄膜特性。
在各層膜分析中，在X光繞射及拉曼量測光譜中，可清楚看出在鋁誘發晶種層往上沈積之多晶矽膜在結晶方向(111)、(220)及(311)上具有比鋁誘發結晶矽薄膜更強的結晶性。從電子顯微鏡可以觀察到大約1 m粒徑，而往上沈積之薄膜具有大於1 m之粒徑。結果顯示利用晶種層向上沈積矽膜之晶粒比直接在玻璃基板沈積之矽膜還要大，其原因主要是藉由晶種層使得往上沈積之矽膜延著其晶種層之結晶方向成長，進而獲得更高結晶率之薄膜，由霍爾效應與拉曼光譜量測結果得知其電子遷移率分別為22及18 cm2/V-s且結晶率高達91及95 %。故以鋁誘發結晶技術當其晶種層及以熱燈絲化學氣相沈積法在晶種層上沉積矽膜能得到良好電性及結晶率，故結合兩者技術應用在產業的發展上，並具有發展的實用性。

The study utilized hot-wire chemical vapor deposition (HWCVD) which mixed different ratio of SiH4 and H2 to deposit Si-film rapidly and also used aluminum-induced crystallization (AIC) to fabricate high-quality polycrystalline silicon (poly-Si) films which served as a seed layer and accumulated large grain poly-Si films quickly above the seed layer. The purpose of the study was to investigate the change of AIC thin films due to different annealing time and temperature, and to further analyze characteristics by X-ray diffraction (XRD), Raman spectroscopy diffraction techniques, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Hall measurement of the seed layer that was produced by the AIC technique and poly-Si films on seed layer that were deposited by HWCVD.
For analysis of each layer, the poly-Si film have been used to detect the crystallization and preferred (111), (220) and (311) orientation by XRD and Raman spectroscopy diffraction techniques which be stronger than AIC-film. The microstructures of each film were observed by SEM and TEM. It was found that the AIC of grain was approximately 1 µm and the Si layers formed on seed layer of grain (1 µm in size) can be obtained. However, the lateral grain size of poly-Si (deposited on seed layer) was larger than the poly-Si films deposited directly on a glass substrate by HWCVD. Since the Si-atoms deposit in the orientation of seed layer, the poly-Si would be obtained. As a result, high crystalline fractions (91 and 95%) and high electron mobility (22 and 18 cm2/V-s) of poly-Si films were obtained by using a combination of HWCVD and AIC techniques.

封面內頁
簽名頁
授權書 iii
中文摘要 iv
Abstract v
誌謝 vi
目錄 vii
圖目錄 x
表目錄 xii

第一章 緒論
1.1前言 1
1.2低溫多晶矽之技術發展 1
1.3太陽電池簡介 3
1.3.1太陽能能源的國際使用情形 3
1.3.2太陽電池簡介 4
1.3.3多晶矽太陽能電池技術的發展現況與應用 6
第二章 鋁誘發矽結晶及熱燈絲沈積之原理
2.1使用鋁誘發低溫多晶矽薄膜結晶之原因 8
2.2鋁誘發矽結晶之原理 8
2.3使用熱燈絲沈積矽膜之原因 8
2.4熱燈絲沈積之原理 10
2.5論文回顧 10
2.5.1鋁誘發技術文獻回顧 10
2.5.2在利用熱燈絲化學氣相沈積矽薄膜之文獻回顧 11
第三章 實驗方法
3.1實驗流程 14
3.2實驗步驟 15
3.3實驗設備 16
3.3.1電子束蒸鍍機 16
3.3.2退火系統 18
3.3.3熱燈絲化學氣相沈積 18
3.4分析儀器 18
3.4.1場發射掃描式電子顯微鏡 18
3.4.2 X光繞射儀 19
3.4.3拉曼光譜儀 20
3.4.4霍爾量測 21
第四章 結果與討論
4.1鋁薄膜對誘發之影響 23
4.2多晶矽薄膜/鋁於退火後之關係 24
4.3熱處理條件對鋁-矽誘發之影響 24
4.4熱處理溫度對鋁-矽誘發之影響 25
4.5熱處理時間對鋁-矽誘發之影響 26
4.6電性量測 27
4.7鋁誘發當晶種層沈積多晶矽薄膜 28
第五章 結論與未來展望
5.1結論 31
5.2未來展望 32參考文獻 65

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