臺灣博碩士論文加值系統

本論文是以利用分子束磊晶成長於磷化銦(InP)基板上之Ⅱ-Ⅵ族硒化鋅鎘/硒化鋅鎘鎂(ZnCdSe/ZnCdMgSe)非對稱耦合量子井結構為樣品，以光致發光量測技術(Photoluminescence)研究樣品隨溫度變化的光學特性，探討非對稱耦合量子井躍遷能量隨溫度變化情形。
以光致發光量測技術為主要量測工具。將光致發光光譜以高斯函數譜形吻合獲得所有樣品在各溫度下的躍遷能量，再利用瓦希尼（Varshni）、和玻色-愛因斯坦（Bose-Einstein）的關係式吻合隨溫度變化的躍遷能量，求得各參數值，分析硒化鋅鎘/硒化鋅鎘鎂非對稱耦合量子井的躍遷能量隨著溫度變化情形，並且判別實驗數據的可靠度，以及樣品的光學特性。
本論文量測與分析的結果明顯發現躍遷能量隨著溫度降低而變大，隨寬度增加而變小。當溫度漸漸升高，提高熱能導致能量逐漸的下降，而產生紅位移現象。因此我們利用瓦希尼及玻色-愛因斯坦兩方程式，分析光學訊號隨溫度變化特性理論，溫度範圍從10〜300 K的溫度變化參數和半高寬參數進行評估並討論分析。
深入研究硒化鋅鎘/硒化鋅鎘鎂非對稱耦合量子井結構的激子復合，藉由變功率的光致發光實驗來探討，進而推測此材料產生螢光的物理機制，光致發光之強度與激發強度的關係式得到的γ值為1.05、1.11及1.19，因此我們可以根據文獻推測是屬於激子復合機制。從驗結果可得知光致發光是個非接觸、非破壞性的量測技巧，相當適合用於量測製作中紅外線區雷射元件的寬能隙II-VI族材料。

Photoluminescence (PL) was used to characterize the optical transitions in a ZnCdSe/ZnCdMgSe asymmetric coupled quantum well (ACQW) structure grown on InP substrate by molecular beam epitaxy.
The PL spectra revealed the situation of the optical transition in the ACQW structures. Using Gaussian line shape to fit transition energies depends on temperatures. Then use Varshni and Bose-Einstein relation consistent transition energy depends on temperature, the parameters obtained value analysis of the optical characteristic of the transition energy of ZnCdSe/ZnCdMgSe ACQW depends on temperature and determine the reliability of the experimental data.
The PL spectra for the ACQW sample in the temperature range from 10 to 300 K. The PL peak monotonically shifts toward lower energy and broadens with increasing temperature in the same temperature range above. Thus, using Varshni and Bose-Einstein formula to analyze the optical signal that fit the theory of temperature dependent characteristic from the temperature range. The parameter of boarding function to assess, analyze and discuss.
Finally, study of ZnCdSe/ZnCdMgSe ACQW structure of the integrated PL intensity as a function of laser excitation power density. The relation between the integrated PL intensity and the excitation density where γ is a fitting parameter. The fitted values γ that at the measured temperature range the luminescence is dominated by exciton recombination.
The results demonstrate the potential of PL techniques for the contactless and nondestructive characterization of the wide band gap II-VI QW structures for mid-IR intersubband device applications.

明志科技大學碩士學位論文 指導教授推薦書 i
明志科技大學碩士學位論文 口試委員會審定書 ii
明志科技大學學位論文授權書 iii
誌謝 iv
摘要 v
Abstract vi
目　錄 viii
表索引 x
圖索引 xi
第一章 緒論 1
1.1 研究背景 1
1.2 非對稱耦合量子井介紹 6
1.3 論文架構 7
第二章 實驗系統與儀器架設 8
2.1 分子束磊晶系統 8
2.2 光致發光原理 10
2.3 光致發光系統架設 12
第三章 樣品性質與結構 22
3.1 樣品性質 22
3.2 樣品結構 24
第四章 實驗結果與討論 27
4.1 隨溫度變化光致發光實驗光譜 27
4.2 隨溫度變化分析 31
4.2.1隨溫度變化之能隙分析 31
4.2.2隨溫度變化之半高寬分析 33
4.2.3隨溫度變化之發光強度分析 34
4.2.4隨溫度變化之變功率發光強度分析 36
第五章 結論 56
參考文獻 57

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