臺灣博碩士論文加值系統

本研究以化學水浴沉積法(Chemical Bath Deposition)製備AgInS2光觸媒薄膜，所選擇光觸媒材料為Ag2S/In2S3半導體光觸媒。探討兩階段方式成長不同薄膜厚度對薄膜成長之影響，經反應溶液調配使金屬離子(Ag+, In3+)與硫離子(S2-)相互反應沉積於ITO導電玻璃上。首先，先將Ag2S沉積於ITO基材上，採用一固定之層數，隨後再將不同厚度之In2S3薄膜沉積覆蓋上去。由於In2S3薄膜厚度的不同，可期望於真空環境下退火後成長出不同比例之Ag2S/In2S3半導體光觸媒薄膜，並予以量測光電性質，晶型結構等來鑑定所成長之薄膜。晶型結構鑑定部份使用X-ray繞射來鑑定，光電性質部份則使用0.35 M Na2S+0.25 M K2SO3電解質溶液並於100 mW氙燈模擬太陽光照射(AM1.5)下測定其光電流值。之後調整參數部份以化學水浴法可能影響鍍膜之參數，尋找鍍液配方與操作條件。

In this study, Ag2S/In2S3 films were deposited on indium tin oxide coated glass (ITO) substrates by chemical bath deposition (CBD). Silver nitrate, indium nitrate, ammonia nitrate, triethanolamine and thioacetamide were used as the sources of Ag+, In3+, buffer solution, complex agent and S2-, respectively. The films were prepared by two-step method. Firstly Ag2S thin film was deposited on ITO substrate and covered with In2S3 film the following step. After annealing, the crystallinity of the films turned to AgIn5S8 or AgInS2 due to the different thickness of In2S3 involved. The crystal structures of the thin films were identified by the powder X-ray diffraction and the photocurrents were measured in 0.35 M Na2S + 0.25 M K2SO3 electrolyte solution under illumination of 100 mW Xe lamp with a solar simulator (AM 1.5).

中文摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
表目錄 vi
圖目錄 viii
第一章 序論 1
1.1 研究動機 1
1.2 研究目的 4
第二章 文獻回顧 6
2.1 噴霧熱裂解法 6
2.2 熱蒸鍍法 7
2.3 化學水浴沉積法 7
2.4 連續式離子層吸收和反應 8
2.5 分子束磊晶法 9
2.6 濺鍍法 10
2.7 可見光光觸媒之設計 11
2.8 硫化銀 12
2.9 硫化銦 13
2.10 Ag-In-S混合物 13
2.11 Ag-In-S相圖 13
第三章 實驗方法與步驟 15
3.1 實驗藥品 15
3.2 實驗儀器設備 15
3.1.1 實驗設備 15
3.1.2 分析儀器 15
3.3 實驗流程 17
3.4 實驗步驟 18
3.4.1 基材製備 18
3.4.2 薄膜製程 18
3.4.3 Ag-In-S薄膜反應液配製 20
3.5 鍍液反應機制 21
3.6 薄膜晶型鑑定(XRD) 22
3.7 薄膜測厚儀(α-step surface profile) 22
3.8 薄膜光電量測系統 23
第四章 結果與討論 24
4.1 硫化銀部份(Ag2S) 24
4.1.1 Ag2S XRD晶型鑑定 24
4.1.2 薄膜表面形貌分析 25
4.1.3 薄膜厚度測量 29
4.1.4 原子力顯微鏡圖形分析 32
4.1.5 薄膜光學性質量測 33
4.2 硫化銦部份(In2S3) 35
4.2.1 In2S3 XRD晶型鑑定 35
4.2.1.1 退火400oC一小時XRD晶型鑑定 35
4.2.1.2 退火500℃一小時XRD晶型鑑定 37
4.2.2 薄膜表面形貌分析 38
4.2.3 薄膜厚度測量 45
4.2.4 原子力顯微鏡圖形分析 48
4.2.5 薄膜光學性質量測 50
4.2.6 光電流量測 54
4.3 Ag2S/In2S3部份 57
4.3.1 Ag2S/In2S3 XRD晶型鑑定 57
4.3.2 Ag2S/In2S3薄膜表面形貌分析 64
4.3.3 薄膜厚度測量 71
4.3.4 薄膜光學性質量測 74
4.3.5 光電流量測 78
第五章 結論 85
5.1 結論 85
參考文獻 86

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