臺灣博碩士論文加值系統

在本論文中，我們調查了兩種應用於短波長之布拉格反射器。它們禁止帶中心的響應波段分別設計在550和570奈米這兩個位置。禁止帶中心設計在550奈米的布拉格反射器是使用濺鍍技術將10對和15對的氧化鋅/氧化鎂多層膜結構沉積於矽基板上製作而成。而禁止帶中心設計在570奈米的布拉格反射器則是使用分子束磊晶技術將15對和20對的碲化鋅/硒化鋅多層膜結構沉積於方向為(001)砷化鎵基板上製作而成。
首先，氧化鋅/氧化鎂布拉格反射器被量測於光源為正向入射以及不同的入射角度。光源為正向入射時，10對的氧化鋅/氧化鎂堆疊其反射率可以達到91.4%，而15對的氧化鋅/氧化鎂堆疊其反射率則可以高達98.7%。光源為斜向入射時，隨著入射角度的增加實驗所得之反射光譜其響應波長和譜線帶寬分別呈現紅移以及變窄之趨勢。我們使用代入了Sellmeier方程式和隨機厚度方程式的轉移矩陣模型來探討實驗量測的反射光譜。反射光譜其響應波段和譜線帶寬的變化也藉由TE和TM極化光隨入射角度之模擬曲線來探討。研究調查指出堆疊厚度的控制以及堆疊的對數是影響布拉格反射器的兩項重要因素。除此之外，研究也提供了在選擇多層膜結構時設計出全反射帶的有價值參數。
其後，我們使用了類似的量測方式調查碲化鋅/硒化鋅布拉格反射器。不同的是我們於光源斜向入射時增加了極化片。樣品量測所得之反射光譜也是使用上述的方式來計算。從實驗曲線可以觀察到由隨著入射角度改變之TE和TM極化光的反射帶其邊緣定義出全反射帶帶寬約為15奈米。此結果顯示出碲化鋅和硒化鋅材料適合用來製作具有全反射帶的多層膜結構。

In this dissertation, the two short-wavelength distributed Bragg reflectors (DBRs) were investigated. Their resonant wavelength of stop band center is designed to be at 550 nm and 570 nm, respectively. The DBRs of stop-band at 550 nm were built from 10- and 15-period ZnO/MgO multilayer films deposited on Si substrates by sputtering technology. The DBRs of stop-band at 570 nm were fabricated by molecular beam epitaxy using 15- and 20-period ZnTe/ZnSe multilayer films grown on GaAs (001) substrates.
Firstly, the ZnO/MgO Bragg reflectors were measured at normal incidence and different incident angles. At normal incidence, the reflectivity for the 10-period ZnO/MgO stacks can reach up to 91.4% and for the 15-period ZnO/MgO stacks the reflectivity can be as high as 98.7%. At oblique incidence, as increasing the incident angle, the resonant wavelength and bandwidth of the measured reflectance spectra exhibit redshift and narrowing, respectively. The experimental reflectivity spectra are discussed by comparing with simulation curves calculated using the transfer matrix method which takes into account of the Sellmeier equation and the random thickness model. The variations in the resonant wavelength and bandwidth of reflectance band were also investigated by the simulated curves in terms of angles of incidence for TE and TM polarizations. The investigations indicate that a refined control of the individual layer thickness and the number of layer periods are the two important factors that can improve the DBRs performance. Besides, they also provided valuable parameters for designing an omnidirectional reflection band with selected multilayer structure.
Secondly, we investigated the samples of the ZnTe/ZnSe Bragg reflectors with similar measurement condition. The difference is addition of polarizers. The experimental reflectivity spectra of theses samples were also calculated by the mentioned method. An omnidirectional reflection range defined from the edge of incident-angle-dependent reflection band with TE and TM polarizations is about 15 nm, and is consistent with the observed experimental curves. The results showed that the selected ZnTe and ZnSe materials are suitable for constructing multilayer structures having omnidirectional reflection band.

Contents
Abstract I

Table Captions V

Figure Captions V

Contents III

Chapter 1 Introduction 1
1-1 Periodic layered media 1
1-2 Distributed Bragg reflectors 1
1-3 Thesis organization 3

Chapter 2 Materials 4
2-1 Motivation 4
2-2 Zinc-Oxide and Magnesium-Oxide 4
2-3 Zinc-Telluride and Zinc-Selenide 5

Chapter 3 Samples and measurement system 6
3-1 Introduction of Samples 6
3-1-1 Samples of ZnO/MgO DBRs 6
3-1-2 Samples of ZnTe/ZnSe DBRs 7
3-2 Measurement system 7
3-2-1 X-Ray diffraction 7
3-2-2 Scanning electron microscope 8
3-2-3 Normal incidence measurement system 8
3-2-4 Oblique incidence measurement system 9

Chapter 4 Simulation theory 10
4-1 Wave propagation in periodic layered media – transfer matrix method 10
4-2 Simulation of reflectivity spectrum at room temperature 12
4-2-1 Normal incidence 12
4-2-2 Oblique incidence 13
4-2-3 Stop-band center and band-edge wavelength for the reflectance spectrum
15

Chapter 5 Investigation of ZnO/MgO Bragg reflectors 17
5-1 Experimental results 17
5-2 Summary 20

Chapter 6 Investigation of ZnTe/ZnSe Bragg reflectors 21
6-1 Experimental results 21
6-2 Summery 23

Chapter 7 Conclusion 24

References 25

Tables 29

Figures 29

Publication List 44

[1] P. Yeh, Optical Waves in Layered Media (Wiley, New York, 1988).
[2] E. Denton, Sci. Am. 224, 65 (197).
[3] M. F. Schubert, J. Q. Xi, J. K. Kim, E. F. Schubert, Appl. Phys. Lett. 90, 141115 (2007).
[4] M. H. MacDougal, P. D. Dapkus, A. E. Bond, C. K. Lin, J. Geske, IEEE J. Sel. Top. Quant. 3, 905 (1997)
[5] P. Tayebati, P. D. Wang, D. Vakhshoori, Robert N. Sacks, IEEE Photonic. Tech. L. 10, 394 (1994).
[6] A. Shaw, T. McCormack, A.L. Bradley, J.G. Lunney, J.F. Donegan, phys. status solidi (a) 192, 103 (2002).
[7] F.C. Peiris F C, S. Lee, U. Bindley, J.K. Furdyna, Semicond. Sci. Technol. 14, 878 (1999).
[8] F. Abeles, Ann. Phys. 5, 596 (1950).
[9] M. Born and E. Wolf, Principles of Optics (Pergamon, New York, 1964).
[10] A. Yariv and P. Yeh, Optical Waves in Crystals (Wiley, New York, 1983).
[11] J. P. van der Ziel, M. Ilegems, Appl. Opt. 14, 2627 (1975).
[12] A. Charez-Pirson, H. Ando, H. Saito, H. Kanbe, Appl. Phys. Lett. 64, 1759 (1994).
[13] J. M. Gerard, D. Barrier, J. Y. Marzin, R. Kuszelewicz, L. Manin, E. Costard, V. Thierry-Mieg, T. Rivera, Appl. Phys. Lett. 69, 449 (1996).
[14] P. Kelkar, V. Kozlov, H. Jeon, A. V. Nurmikko, C. C. Chu, D. C. Grillo, J. Han, C. G. Hua, R. L. Gunshor, Phys. Rev. B 52, R5491 (1995).
[15] A. Salokatve, K. Rakennus, P. Uusimaa, M. Pessa, T. Aherne, J. P. Doran, J. O’Gorman, J. Hegarty, Appl. Phys. Lett. 67, 407 (1995).
[16] P. Uusimaa, K. Rakennus, A. Salokatve, M. Pessa, T. Aherne, J. P. Doran, J. O’Gorman, J. Hegarty, Appl. Phys. Lett. 67, 2197 (1995)
[17] Y. Fink, J. N. Winn, S. Fan, C. Chen, J. Michel, J. D. Joannopoulos, E. L. Thomas, Science 27, 1679 (1998).
[18] E. Fred Schubert, Light-Emitting Diodes (Cambridge University, Cambridge, 2006).
[19] J. N. Winn, Y. Fink, S. Fan, J. D. Joannopoulos, Opt. Lett. 23, 1573 (1998).
[20] K. M. Chen, A. W. Sparks, H. C. Luan, D. R. Lim, K. Wada, L. C. Kimerling, Appl. Phys. Lett. 75, 3805 (1999).
[21] M. Ibanescu, Y. Fink, S. Fan, E. L. Thomas, J. D. Joannopoulos, Science 289, 415 (2000).
[22] F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y. C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, J. J. Wierer, Phys. Stat. Sol. (a) 194, 380 (2002).
[23] N. Holonyak, Jr., S. F. Bevacqua, Appl. Phys. Lett. 1, 82 (1962).
[24] S. Nakamura, M. Senoh, T. Mukai, Jpn. J. Appl. Phys. 32, L8 (1993).
[25] H. Ohta, K.I. Kawamura, M. Orita, M. Hirano, N. Sarukura, H. Hosono, Appl. Phys. Lett. 77, 475 (2000).
[26] Y. C. Kong, D. P. Yu, B. Zhang, W. Fang1 and S. Q. Feng, Appl. Phys. Lett. 78, 407 (2001).
[27] H. Morkoc, U. Ozgur, Zinc Oxide: Fundamentals, Materials and Device Technology (Wiley, New York, 2009).
[28] G. Kenanakis, D. Vernardou, E. Koudoumas, G. Kiriakidis, N. Katsarakis, Sens. Actuators. B Chem. 124, 187 (2007).
[29] Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma, Z. K. Tang, P. Yu, G. K. L. Wong, Phys. Stat. Sol. (b) 202, 669 (1997).
[30] V. Sallet, C. Thiandoume, J. F. Rommeluere, A. Lusson, A. Rivière, J. P. Rivière, O. Gorochov, R. Triboulet, V. Muñoz-Sanjosé, Mater. Lett. 53, 126 (2002).
[31] X. M. Fan, J. S. Lian, Z. X. Guo, H. J. Lu, Appl. Surf. Sci. 239, 176 (2005)
[32] W. C. Shih, R. C. Huang, Vacuum 83, 675 (2008).
[33] M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E. M. Kaidashev, M. Grundmann, Ann. Phys., Lpz. 13, 59 (2004).
[34] Z. Y. Wang, L. Z. Hu, J. Zhao, H. Q. Zhang, Z. J. Wang, Vacuum 80, 977 (2006).
[35] C. Roux, E. Hadji, J. L. Pautrat, Appl. Phys. Lett. 75, 1661 (1999).
[36] X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, D. Z. Shen, Appl. Phys. Lett. 101, 081104 (2012).
[37] P. Bhattacharya, Rasmi R. Das, R. S. Katiyar, Appl. Phys. Lett. 83, 2010 (2003).
[38] J. Szczerba, R. Prorok, P. Stoch, E. Śnieżek, I. Jastrzębska, Nukleonika 60, 143 (2015).
[39] T. Chen, X. M. Li, S. Zhang, H. R. Zeng, J. Cryst. Growth 270, 553 (2004).
[40] C. H. Park, , Y. K. Kim, S. H. Lee, W. G. Lee, Y. M. Sung, Thin Solid Films 366, 88 (2000).
[41] J. G. Yoon, K Kim, Appl. Phys. Lett. 66, 2661 (1995).
[42] B. S. Kwak, E. P. Boyd, K. Zhang, A. Erbil, B. Wilkins, Appl. Phys. Lett. 54, 2542 (1989).
[43] K. Tennakone, J. Bandara, P. K. M. Bandaranayake, G. R. A. Kumara, A. Konno, Jpn. J. Appl. Phys. 40, L732 (2001).
[44] S. K. Shukla, G. K. Parashar, A. P. Mishra, Puneet Misra, B. C. Yadav, R. K. Shukla, L. M. Bali, G. C. Dubey, Sens. Actuators. B Chem. 98, 5 (2004).
[45] K. Iga, Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution, Jpn. J. Appl. Phys. 47, 1 (2008).
[46] R. Sharma, N. S. Saxena, S. Kumar, T. P. Sharma, Indian J. Pure Ap. Phy. 44, 192 (2006).
[47] K. Yoshino, A. Memon, M. Yoneta, K. Ohmori, H. Saito, M. Ohishi, Phys. Stat. Sol. (b) 229, 977 (2002).
[48] B. Bozzini, M. A. Baker, P. L. Cavallotti, E. Cerri, C. Lenardi, Thin Solid Films 361, 388 (2000)
[49] Y. Z. Huang, L. Chen, L. M. Wu, Inorg. Chem. 47, 10723 (2008).
[50] H. Bellakhder, A. Outzourhit, E.L. Ameziane, Thin Solid Films 382, 30 (2001).
[51] A. Erlacher, A. R. Lukaszew, H. Jaeger, B. Ullrich, Surf. Sci. 600, 3762 (2006).
[52] R. D. Feldman, R. F. Austin, P. M. Bridenbaugh, A. M. Johnson, W. M. Simpson, B. A. Wilson, C. E. Bonner, J. Appl. Phys. 64, 1191 (1988).
[53] J. Fan, X. Liu, J. K. Furdyna, Y. H. Zhang, Appl. Phys. Lett. 101, 121909 (2012).
[54] S. Venkatachalam, Y. L. Jeyachandran, P. Sureshkumar, A. Dhayalraj, D. Mangalaraj, Sa.K. Narayandass, S. Velumani, Mater. Charact. 58, 794 (2007).
[55] S. Adachi, T. Taguchi, Phys. Rev. B 43, 9569 (1991).
[56] H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76, 1363 (1994).
[57] C. D. Lokhande, P. S. Patil, H. Tributscha, A. Ennaoui, Sol. Energ. Mat. Sol. C. 55, 379 (1998).
[58] A. Rizzo, M. A. Tagliente, L. Caneve, S. Scaglione, Thin Solid Films 368, 8 (2000).
[59] T. Yao, Y. Makita, S. Maekawa, Appl. Phys. Lett. 35, 97 (1979).
[60] D. L. Huffaker, L. A. Graham, H. Deng, D. G. Deppe, IEEE Photonic. Tech. L. 8, 974 (1996).
[61] F.C. Peiris F C, S. Lee, U. Bindley, J.K. Furdyna, Semicond. Sci. Technol. 14, 878 (1999).
[62] Y. S. Huang, C. C. Chang, J.W. Lee, Y. C. Lee, C. C. Huang, Z. K.Wun, K. K. Tiong, Phys. Scr. T157, 014034 (2013).
[63] C. W. Teng, J. F. Muth, Ü. Özgür, M. J. Bergmann, H.O. Everitt, A.K. Sharma, C. Jin, J. Narayan, Appl. Phys. Lett. 76, 979 (2000).
[64] N. B. Chen, H. Z. Wu, T. N. Xu, J. Appl. Phys. 97, 023515 (2005).
[65] Y. S. Huang, S. Y. Hu, Y. C. Lee, C. C. Chang, K. K. Tiong, J. L. Shen W. C. Chou, J. Alloy. Comp. 649, 755 (2015).
[66] C. B. Fu, C. S. Yang, M. C. Kuo, Y. J. Lai, J. Lee, J. L. Shen, W. C. Chou, S. Jeng, Chin. J. Phys. 41, 535 (2003).
[67] 林麗娟,X光繞射原理及其應用(工業材料研究所).
[68] 羅聖全,小奈米大世界-奈米科技的基本工具之一(清華大學).
[69] D. C. Creagh, D. A. Bradley, Radiation in Art and Archeometry (Elsevier, Netherlands, 2000).
[70] W. Zhou, R. P. Apkarian, Z. L. Wang, D. Joy, Fundamentals of scanning electron microscopy. In: W. Zhou, Z. L. Wang, Eds. Scanning Microscopy for Nanotechnology: Techniques and Applications (Springer, New York, 2006).
[71] Z. L. Wang, Y. Lui, Z. Zhang, Handbook of Nanophase and Nanostructured Materials (Springer, New York, 2002).
[72] W. H. Southwell, Appl. Opt. 38, 5464 (1999).
[73] Y. S. Huang, C. C. Chang, J. W. Lee, Y. C. Lee, C. C. Huang, Z. K. Wun, K. K. Tiong, Opt. Rev. 21, 651 (2014).
[74] M. Sundraraja, J. Suresh, R. Rajiv Gandhi, Dig. J. Nanomater. Biostruct. 7, 983 (2002).
[75] S. Nakano, S. I. Yamaura, A. Kitano, M. Sato, S. Uchinashi, T. Hamada, N. Umesaki, H. Kimura, A. Inoue, Mater. Trans. 45, 3232 (2004).
[76] S. S. Murtaza, J. C. Campbell, J. Appl. Phys. 77, 3641 (1995).
[77] Y. Park, Y.G. Roh, C.O. Cho, H. Jeon, Appl. Phys. Lett. 82, 2770 (2003).
[78] D. N. Chigrin, A. V. Lavrinenko, D. A. Yarotsky, S. V. Gaponenko, Appl. Phys. A68, 23 (1999).
[79] H. H. Li, J. Phys. Chem. Ref. Data 13, 103 (1984).
[80] 張儒雅, 非對稱半導體微腔體的光學研究 (中原大學,中壢, 2001).