臺灣博碩士論文加值系統

在本研究中，首先提出了一個新穎的石墨烯薄膜可選擇性成型之製程。我們發現石墨烯在電泳沉積的製程中具有特殊的正極吸附特性，將其沉積於指叉狀電極板上及實驗室所設計之晶片上，並成功的使用此方式應用於溫度感測，其製程簡單而低耗能。
本論文同時提出一新穎石墨烯材料，其為石墨烯、有機溶液以及黏著劑(PVB)混合應用於溫度感測器。由實驗研究我們可以發現指叉狀電極板溫度感測器對於溫度的量測具有快速的反應響應以及高感測穩定度，其中以6V 外加電壓沉積之溫度感測器有最佳的感測特性，並且成功應用在CMOS-MEMS 感測晶片上，與指叉狀電極6V 外加電壓搭配浸鍍的條件下相似的溫度感測電阻變化趨勢，說明以6V 外加電壓條件下，CMOS-MEMS 溫度感測晶片與指叉狀電極板皆有良好的溫度感測特性。根據實驗結果，此研究提出之石墨烯溫度感測器，吸附在CMOS-MEMS 感測晶片上，靈敏度可達0.53%/℃。

In this research, a novel graphene film manufacturing process was proposed. We found that graphene has positive adsorption characteristics of special process in the electrophoretic deposition, and deposited on the interdigital electrode plate and the chip of laboratory design. Successfully using this method is applied to temperature sensor, which has the advantages of simple process and low energy consumption.
In terms of temperature measurement, results of our experiments can be found that interdigital electrode plate temperature sensor for measuring temperature has fast response and stability. Moreover, the temperature sensor could obviously find that the sensitivity of applying 6V positive electric field has the best performance on temperature measuring. From temperature measuring experiments, it could find that the CMOS-MEMS temperature sensor and PCB of comb-type Cu electrodes which applied 6V positive electric field have similar trends of temperature sensing. It is reasonable to speculate that coated under applying 6V positive electric field conditions, CMOS-MEMS temperature sensor and interdigital electrode plate both have good temperature sensing characteristics. According to a careful investigation of the measurement results, the sensitivity of proposed CMOS-MEMS temperature sensor reaches 0.53%/℃.

摘要......................................................I
Abstract.................................................II
謝誌.....................................................III
目錄......................................................IV
圖目錄....................................................VII
表目錄.....................................................XI
第1章 緒論..................................................1
1-1 前言...................................................1
1-2 研究動機與目的...........................................2
1-3 文獻回顧................................................4
第2章 石墨烯材料特性與CMOS-MEMS溫度感測技術....................11
2-1 CMOS-MEMS簡介.........................................11
2-1-1 CMOS 製程技術........................................12
2-1-2 CMOS-MEMS微機電製程..................................14
2-2 石墨烯基本性質..........................................19
2-3 薄膜製備-電泳沉積.......................................23
2-3-1 電泳沉積原理..........................................24
2-3-2 電泳沉積方式..........................................27
2-3-3 水系與非水系懸浮液.....................................30
2-3-4 黏結劑的添加..........................................32
2-3-5 影響電泳速度的因素.....................................32
2-3-6 電泳沉積的優點........................................33
2-4 溫度感測器.............................................34
第3章 CMOS-MEMS元件製作與研究方法............................40
3-1 CMOS-MEMS溫度感測器之架構...............................41
3-2 CMOS-MEMS溫度感測器之設計與製作..........................42
3-2-1 元件設計流程與架構....................................42
3-2-2 元件結構設計與製作.....................................45
3-3 石墨烯感測材料製備.......................................51
3-3-1 實驗藥品.............................................51
3-3-2 製作流程.............................................51
3-4 量測架構...............................................54
第4章 實驗結果與討論.........................................57
4-1 石墨烯薄膜製備..........................................57
4-1-1 外加電場對石墨烯薄膜之影響..............................60
4-2 石墨烯溫度感測特性.......................................64
4-3 石墨烯不同環境溫度感測特性................................67
4-4 感測材料應用於CMOS-MEMS晶片..............................69
第5章 結論.................................................79
5-1 結論..................................................79
第6章 參考文獻..............................................81

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