|
[1]S. C. Song, M.M. Hussain, J. Barnett, B.S. Ju, B.H. Lee, Sematech, Austin, Texas 2007/4/9
[2]Matthew Werner, Peter J. King, Sarah Hindley, Simon Romani, Sean Mather, Paul R. Chalker, Paul A. Williams, and Jakob A. van den Berg, “Atomic layer deposition of Ti-HfO2 dielectrics”, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31, 01A102 (2013)
[3]施敏、李明達著，曾俊元譯，半導體元件物理與製作技術 第三版，國立交通大學出版社出版，102年8月
[4]蕭宏(Hong Xiao) 陳啓文、許重傑、蔡有仁、溫榮弘、楊銀堂、段寶興,半導體製程技術導論(第二版),全華圖書股份有限公司 2012年6月
[5]G. E. Moore, “Cramming more components onto integrated circuits”, Electronics, vol. 38, pp. 114-117, 1965.
[6]Intel moore’s Law (1970-2020)
[7]MASH-DIGI. [Online]. Available: http://mash-digi.com/2015/02/06/intel-said-its-10nm-processor-will-be-lanuched-in-2017/
[8]J. Robertsona, “High dielectric constant oxides”, Eur. Phys. J. Appl. Phys. vol. 28, pp. 265-291, 2004
[9] 蕭凱木突破10奈米製程物理極限 電晶體結構/材料加速變革 新電子科技雜誌2014/3/1
[10]Bich-Yen Nguyen, Carlos Mazure , Soitec, Bernin, France 2012/8
[11]J.A. Kittl, K. Opsomer, M. Popovici, N. Menou, B. Kaczer, X.P. Wang, C. Adelmann, M.A. Pawlak, K. Tomida, A. Rothschild, B. Govoreanu, R. Degraeve, M.Schaekers, M. Zahid, A. Delabie, J. Meersschaut, W. Polspoel, S. Clima, G. Pourtois,W. Knaepen, et al. , “High-k dielectrics for future generation memory Devices (Invited Paper)”, J. Microelectronic Engineering, vol. 86, pp. 1789-1795, July-September 2009
[12]J. Robertson, “Band offsets of wide-band-gap oxides and implications for future electronic devices”, J. Vaccum Science. Technol., vol. 18, no. 3, pp.1785, 2000
[13]K. J. Hubbard and D. G. Schlom, “Thermodynamic stability of binary oxides in contact with silicon”, J. Mater. Res., vol. 11, no. 11, pp. 2757, 1996
[14]R. H. Dennard, “Field effect transistor memory”, U. S. Patent, vol.3, pp. 387286, granted June 4, 1968.
[15]David Vanderbilt, Xinyuan Zhao, Davide Ceresoli, “Structural and dielectric properties of crystalline and amorphous ZrO2” , Thin Solid Films, pp.125128, 2005
[16]C. T. Kuo, R. Kwor and K. M. Jones: Thin Solid Films 213 (1992) 257.
[17]R.Terki,G.Bertrand,H.Aourag,C.Coddet, “Cubic-to-tetragonal phase transition of HfO2 from computational study”,pp.1484-1486,2008
[18]L. Kang, B.-H. Lee, W.-J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi and J. C. Lee: IEEE Electron Device Lett. 21 (2000) 181.
[19]申泮文,車雲霞 無機化學叢書 北京:科學出版社，1998
[20]Handbook of Chemistry and Physics, ed. D. R. Lide edition (CRC, New York, 1999) 80th ed., p. 12.
[21]S.-D.Mo and W.Y.Ching ,Electronic and optical properties of three phases of titanium dioxide:Rutile,anatase,and brookite,Physical review B vol.51,pp. 13023-13032,1995
[22]Neamen, Donald A., “Semiconductor physics and device Basic Principles Third Edition”, McGraw-Hill, 2003
[23]Minha Seo, Seong Keun Kim, Jeong Hwan Han, and Cheol Seong Hwang, “Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 Interlayer”,vol.22,pp4419-4425,2010
[24]Dieter K. Schroder, Semiconductor Material and Device Characterization, 2rd Edition,John Wiley and Cons,Inc.,1998
[25]F. Lime, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, H. Iwai, “Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric,” Solid-State Electronics, Vol. 47, Issue 10, Pages 1617-1621, October 2003
[26]McWhorter PJ, Winokur PS. Appl Phys Lett;48:133. 1986
[27]李雅明，吳世全，陳宏名，「鐵電記憶元件」，電子月刊，第二卷，第九期, p.68-p.84,1996
[28]Hong Xiao(蕭宏)著，羅正忠、張鼎張譯，半導體製程技術導論修訂版，台灣培生教育出版股份有限公司出版，100年12月
[29]S.M. Sze, ED., Physics of Semiconductor Deviecs, 2nd ed. ,John Wiley and Cons,Inc.,2002
[30]Jasprit Singh., Semiconductor Devices Basic Principles , John Wiley and Cons, Inc., 2001
[31]Yung-Bin Lin and Joseph Ya-min Lee, ”The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications”, J. Appl. Phys, Vol. 87, Number 4,p.1841-p1843,2000
[32]Jae-Hyun Joo, Jeong-Min Seon, Yoo-Chan Jeon, Ki-Young Oh,JaeSung Roh and Jae-Jeong Kim,”Improvement of leakage currents of Pt/(Ba,Sr)TiO3/Pt capacitors”, Appl. Phys. Lett. 70(22), p.3053p.30552, June 1997
[33]H. Sawada and K. Kawakami,”Electronic structure of oxygen vacancy in Ta2O5, J. Appl. Phys. ”,Vol. 86, Issue 2, p.871-p.880,1998
[34]Hyuk-Min Kwon, Won-Ho Choi, In-Shik Han, Min-Ki Na, Sang-Uk Park, Jung-Deuk Bok, Chang-Yong Kang, Byoung-Hun Lee, Raj Jammy, Hi-Deok Lee, ”Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs”, Microelectronic Engineering, 10 April 2010
[35]Joo-Hyung Kim, Velislava A. Ignatova, Peter Kücher, Martin Weisheit, Ehrenfried Zschech,”Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si”, J. of Appl. Phy, Volume 9, Issue 2, Supplement 1, Pages e104-e107, March 2009
[36]J. M. Leger, A. Atouf, P. E. Tomaszewski, and A. S. Pereira, “Pressure-induced phase transitions and volume changes in HfO2 up to 50 GPa”, Phys. Rev. B ,pp.48-93,1993
[37]G.-M. Rignanese, X. Gonze, Gyuchang Jun, Kyeongjae Cho, “First-principles investigation of high-κ dielectrics: Comparison between the silicates and oxides of hafnium and zirconium”, Phys. Rev.B,volum70,2004
[38]S. Migita, Y. Watanabe, H. Ota, H. Iot, Y. Kamimuta, T. Nabatame, and A. Toriumi, “Design and Demonstration of Very High-k (k~50) HfO2 for Ultra-Scaled Si CMOS”, Symposium on VLSI Technology Digest of Technical, 2008
[39]Yukinori Morita Shinji Migita, Wataru Mizubayashi, and Hiroyuki Ota “Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing” Received February 10, 2011; accepted June 2, 2011; published online October 20, 2011
[40]S. Migita, Y. Morita, W. Mizubayashi, and H. Ota, “Preparation of Epitaxial HfO2 Film (EOT=0.5 nm) on Si Substrate Using Atomic-Layer Deposition of Amorphous Film and Rapid Thermal Crystallization (RTC) in an Abrupt Temperature Gradient”, IEEE International Electron Devices and Materials Conference, pp.11.5.1-11.5.4, 2010
[41]P.F. Lee, J.Y. Dai, K.H. Wong, H.L.W. Chan, C.L.J. Choy, “Growth and characterization of Hf–aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å”, Appl. Phys. ,pp3665–3667,2003
[42]Kazutaka HONDA, Akira SAKAI , Mitsuo SAKASHITA, Hiroya IKEDAy , Shigeaki ZAIMA1 and Yukio YASUDA,’’ Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2–TiO2 Composite Films’’, Jpn. J. Appl. Phys.,vol.43,pp1571-1576,2004
[43]M. C. Cisneros-Morales and C. R. Aita,’’ Mixed cation phases in sputter deposited HfO2–TiO2 nanolaminates’’, Appl. Phys. Lett.,vol.93,2008
[44]F. Chen, X. Bin, C. Hella, X. Shi, W. L. Gladfelter, and S. A. Campbell,’’ A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics. ’’, Microelectronic. Eng.,pp263-266,2004
[45]Negara MA, Cherkaoui K, Majhi P, Young CD, Tsai W, Bauza D, et al. ,’’ The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs. ’’, Microelectronic. Eng.2004
[46]Y. Hou, R. Liu, W. B. Zhang, L. F. Liu*, B. Chen, F. F. Zhang “Improved Performance of TiN/HfO2/Pt Resistive Switching Device by Modifying TiN Top Electrode Crystal Orientation”, Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China
[47]C.H. Fua, K.S. Chang-Liao,“A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric” Microelectronic Engineering Pages 1309–1311,July 2011
[48]A. Ogawa*, K. Iwamoto “0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate” Microelectronic Engineering 84 (2007) 1861–1864
[49]S.M. Sze, ED., Physics of Semiconductor Deviecs, 2nd ed. ,John Wiley and Cons,Inc.,2002
[50]Jasprit Singh., Semiconductor Devices Basic Principles , John Wiley and Cons, Inc., 2001
[51]Yung-Bin Lin and Joseph Ya-min Lee, ”The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications”, J. Appl. Phys, Vol. 87, Number 4,p.1841-p1843,2000
[52]Joo-Hyung Kim, Velislava A. Ignatova, Peter Kücher, Martin Weisheit, Ehrenfried Zschech,”Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si”, J. of Appl. Phy, Volume 9, Issue 2, Supplement 1, Pages e104-e107, March 2009
[53]Chien-Liang Chen, Ya-Chin King ”TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs”, IEEE Transactions on Electron Devices, Vol. 58, No. 11, November 2011.
[54]Sang Ho Bae, Seung-Chul Song, KiSik Choi, Gennadi Bersuker, George A. Brown, Dim-Lee Kwong, Byoung Hun Lee” Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-kdielectric” Microelectronic Engineering 83 (2006) 460–462
[55]M. Galeti, M. Rodrigues, J.A. Martino, N. Collaert, E. Simoen, C. Claeys ” GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics” Solid-State Electronics 70 (2012) 44–49
[56]Chang, K. S., et al. (2014). "High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library." Journal of Alloys and Compounds 615: 386-389.
[57]Chi, W.-F., et al. (2015). "Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature." Microelectronics Reliability 55(11): 2183-2187
[58]Li, C.-C., et al. (2013). "Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition." Microelectronic Engineering 109: 64-67.
[59]Li, Y.-L., et al. (2015). "Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer." Microelectronic Engineering 147: 67-71.
[60]Chou, C.-H., et al. (2016). "Low-Leakage Tetragonal ZrO2 (EOT<1 nm) With In Situ Plasma Interfacial Passivation on Germanium." IEEE Electron Device Letters 37(2): 138-141.
[61]Zhang, R., et al."Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation." IEEE Electron Device Letters 37(7): 831-834,2016
[62]Zhang, R., et al. "Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks." IEEE Transactions on Electron Devices 63(2): 558-564. (2016).
[63]G.X.L , et al. "HfO2-TiO2 Ultra-Thin Gate Dielectric by RF Sputtering",Ferroelectric,410:1,129-136. (2010).
[64]D.H.Triyoso ,et al. "Characteristics of Mixed Oxide and Nanolaminates of Atomic Layer Deposited HfO2-TiO2 Gate Dielectrics."Journal of The Electrochemical Society,153(9) G834-G839 (2006).
[65]Minha Seo, et al. "Permittvity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 Interlayer."Chem.Mater ,22,4419-4425 4419 2010
[66]Yukinori Morita,Shinji Migita,Wataru Mizubayashi,and Ota "Extremely Scaled(~0.2nm) Equivalent Oxide Thickness of Higher-k (k=40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing" Japanese Journal of Applied Physics 51 2012
[67]K.-S. Chang, W.-C. Lu, C.-Y. Wua, H.-C. Feng "High-throughput identification of higher-k dielectrics from an amorphous N2-doped HfO2–TiO2 library"Journal of Allows and Compounds 615 386-389 2014
[68]D.H.Triyoso,R.I.Hegde "Characteristics of Mixed Oxide and Nanolaminates of Atomic Layer Deposited HfO2-TiO2 Gate Dielectrics" Journal of The Electrochemical Society,153(9) G834-G839 2006
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