臺灣博碩士論文加值系統

為了開發更具空氣穩定性的N-type材料運用在有機場效電晶體中，本篇論文研究中我們以Bisisatin為主體去開發可在大氣環境下穩定運作之 N 型半導體，並將靛紅三號位置上的氧原子以腈基(-CN)取代，試圖降低分子的最低未佔有電子軌域(Lowest unoccupied molecular orbital, LUMO)使得分子能成為空氣下穩定的 N 型有機場效電晶體之半導體層材料。
我們成功合成出萘二醯胺丙二腈衍生物NDAM-C8、NDAM-C2C6，此二化合物差別在於具有不同的烷基側鏈長，其側鏈分別為1-Octylamine、2-Ethyl-hexylamine，並且我們也研究了化合物的的熱穩定性、光學性質、電化學性質。同時也將化合物以不同條件裝置於有機場效電晶體元件中，並且利用X光繞射實驗(XRD)及原子力顯微鏡(AFM)探測半導體層的結晶堆疊與薄膜型態，以探討分子結構與製程條件對元件效能的影響。
在元件效能表現方面NDAM-C8在空氣環境中電子遷移率可以達到3.03×10-4 cm2V-1s-1, 電流開關比則達到4.7×102。而NDAM-C2C6表現出較佳的元件效能，在空氣環境中最高電子遷移率可以達到6.32×10-1 cm2V-1s-1，電流開關比則達到4.0×106。從此研究可知此化合物具有作為N 型有機場效電晶體中半導體層材的潛力。

關鍵字：空氣穩定性、N-type材料、有機場效電晶體、萘二醯胺丙二腈衍生物

In order to develop more air-stable N-type materials applied to Organic Field-effect Transistors (OFETs), in this study we adopted bisisatin as our main structure to design air stable n-type semiconductor, we substituted the malononitrile at 3-position of isatin in order to decrease low-lying lowest unoccupied molecular orbital (LUMO) energy levels which cause them potential candidates for high- performance n-channel OSCs for application in OFETs.
We have successfully synthesized Naphthalene diamide malononitrile Derivatives NDAM-C8 and NDAM-C2C6,and they are different betweem their alkyl side chains which are 1-Octylamine、2-Ethyl-hexylamine respectively, then we investigated their thermo-stability, optical properties, electrochemical properties. Furthermore, we also fabricated our compounds on OFET devices under various conditions, used XRD and AFM to probe crystalline packing or film morphology of semiconductors.
NDAM-C8 have carrier mobility up to 3.03×10-4 cm2V-1s-1 and the Ion/off 4.7×102 of devices under ambient conditions.NDAM-C2C6 have better device performance, it have highest carrier mobility up to 6.32×10-1 cm2V-1s-1 and the best Ion/off 4.0×106 of devices under ambient conditions. This compound possess N-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistors (OFETs).
Key words: air-stable、N-type materials、Organic Field effect Transistors、Naphthalene diamide malononitrile Derivatives

目次
謝誌………………………………………………………………………………………i
摘要……………………………………………………………………………………...ii
Abstract………………………………………………………………………………...iii
目次……………………………………………………………………………………..iv
表目次…………………………………………………………………………………..vi
圖目次………………………………………………………………………………….vii
壹、緒論…………………………………………………………………………………1
1-1 前言 1
1-2 有機場效電晶體介紹 3
1-3 有機場效電晶體元件之結構 5
1-4 有機場效電晶體元件基本分類 8
1-5 有機場效電晶體之運作原理 9
1-6 有機場校電晶體元件重要運算公式及參數 11
1-7 有機半導體的分子排列與載子傳導機制 14
1-8 元件製程技術 19
1-9 有機半導體材料簡介 22
1-10介電層之表面修飾 32
1-11研究動機 34
2-1實驗使用藥品 36
2-2 合成路徑 38
2-3 反應步驟 39
2-4 儀器設備 45
2-4-1 TGA測量 47
2-4-2 微差熱掃描分析儀 48
2-4-3 紫外/可見光吸收光譜 49
2-4-4 循環伏安法 51
2-4-5 原子力顯微鏡 52
2-4-6 X-ray繞射儀 54
2-5元件製程 55
2-5-1 清洗矽晶片 55
2-5-2 氧電漿清洗（O2 Plasma Cleaner） 55
2-5-3 製備自組裝單層薄膜 56
2-5-4 真空蒸鍍有機半導體材料 56
2-5-5 真空蒸鍍金屬電極 56
參、結果與討論………………………………………………………………………..58
3-1熱性質分析 58
3-2光學性質探討 61
3-3電化學性質探討 63
3-4理論計算 66
3-5單晶培養方法 68
3-6單晶解析配合理論計算預測載子遷移率 69
3-7 NDAM-C8分子薄膜型態與元件效能探討 70
3-7-1元件電性 70
3-7-2元件表面XRD探測 72
3-7-3元件表面AFM掃描 77
3-8 NDAM-C2C6分子薄膜型態與元件效能探討 82
3-8-1元件電性 82
3-8-2元件表面XRD探測 86
3-8-3元件表面AFM掃描 89
肆、結論………………………………………………………………………………..92
參考文獻……………………………………………………………………………….93
附錄…………………………………………………………………………………….96

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