臺灣博碩士論文加值系統

近年來發光二極體取代了傳統白熾燈成為新興起的產業，因其具有能量轉換效率高、耗電量低等優點。其中高分子發光二極體以其製程面積大、厚度薄、質量輕、成本低、製程簡單、驅動電壓低、易封裝於可撓曲式基板上等優點引起高度的關注。簡易的PLED元件為三明治結構，在陽極（氧化銦錫）與陰極（鋁）中間以旋轉塗布法製備一層高分子薄膜。為了降低PLED元件的驅動電壓與提升工作壽命，吾人在主動層與陽極間以旋轉塗布法製備PEDOT:PSS；以附微胞法製備PEDOT、Polyaniline作為電洞傳輸層（HTL），並且以田口方法分析得出最佳製程參數。吾人以FTIR分析MEH-PPV之分子結構，利用TGA與DSC測試熱穩定性。使用UV-Vis光譜儀測量驅動電壓與壽命。由FTIR分析得知MEH-PPV有相同的氫波峰、C-Br官能基消失和乙烯基C-H的形成，皆與文獻上相同。TGA分析為385°C，DSC分析為260°C，顯示出熱穩定性與文獻接近。經PLED元件測試後發現含有電洞傳輸層之元件效能比單層元件佳。使用最佳製程參數製備出之元件擁有較低的驅動電壓6 V及較長的工作壽命10 h。

In recent years, light-emitting diodes have substituted the incandescent into a new industry, because of its high energy conversion efficiency and low power consumption.In which the polymer light-emitting diodes have caused high concern due to its advantages which are large-area manufacturing process, thin, light weight, low cost, easy fabrication, low driving voltage, and easily packaged in flexible-type substrate.The simplest PLED has a thin polymer film fabricated by spin coating method sandwiched between the anode(indium tin oxide) and the cathode(Al).To cut down the driving voltage and to increase the working life for the PLED, we added the PEDOT:PSS as hole transport layer(HTL) between emitting material layer(EML) and the cathode by spin-coating, and added the PEDOT, Polyaniline as HTL by admicellar polymerization(AP).The PLEDs were analyzed to acquire the optimum parameters by Taguchi methods.MEH-PPV was analyzed by FTIR to confirm of molecular structures, and by TGA and DSC to test its heat stability.The PLEDs were tested for driving voltage and working life with an UV-Vis spectrometer and a multimeter.The FTIR results show that the synthesized MEH-PPV in this work have the same H peaks and functional groups such as C-Br disappear and CH- stretching vinyl as those found in the literature.The TGA and DSC results show that the synthesized MEH-PPV decomposes between 385 and 260°C which range is close to the published data.Regarding the fabricated PLEDs, it is found the ones with hole transport layer perform much better than that without.It is also found that the PLEDs fabricated by optimum parameters have the lowest driving voltage of 6 V, and thte longest working life 10 h.

誌謝
摘要 I
Abstract II
目錄 III
圖目錄 VIII
表目錄 XII
第一章 緒論 1
1.1前言 1
1.2發光二極體的發展史 5
1.3研究動機 17
1.4未來應用 18
第二章 實驗相關理論 19
2.1能帶理論 19
2.2共軛高分子導電原理 21
2.3共軛高分子發光原理 23
2.3.1光激發光 24
2.3.2電激發光 25
2.4發光二極體元件結構 26
2.4.1單層結構 26
2.4.2多層結構 27
2.4.3電子傳輸層 28
2.4.4電洞傳輸層 28
2.5導電高分子PEDOT & PEDOT:PSS 29
2.6導電高分子Polyaniline 30
2.7界面活性劑Cetyltrimethylammonium bromide 31
2.8田口方法 31
2.8.1田口方法歷史回顧 31
2.8.2田口方法介紹 32
第三章 實驗方法 34
3.1實驗藥品 34
3.2實驗儀器 35
3.2.1合成裝置 35
3.2.2物性分析儀器 36
3.3 MEH-PPV合成 37
3.3.1 THF（Tetrahydrofuran）之純化除水 37
3.3.2 MEH-PPV單體前驅物合成 39
3.3.3 MEH-PPV單體合成 41
3.3.4 MEH-PPV單體聚合反應 42
3.3.5 MEH-PPV聚合物純化 44
3.4附微胞聚合（Admicellar Polymerization） 45
3.5高分子發光二極體元件製程 47
3.5.1 ITO玻璃表面清潔與蝕刻 47
3.5.2電洞傳輸層製備 48
3.5.3主動層製備 49
3.5.4陰極蒸鍍 49
3.5.5元件製程圖解流程 50
第四章 結果與討論 53
4.1傅立葉轉換紅外光譜儀（FTIR） 53
4.1.1 MEH-PPV單體FTIR吸收光譜 53
4.1.2 MEH-PPV之FTIR吸收光譜 55
4.2 MEH-PPV之TGA熱重量分析 57
4.3 MEH-PPV之DSC熱分析 59
4.4 MEH-PPV之GPC分子量分析 60
4.5 MEH-PPV之UV-Vis 測量 61
4.5.1MEH-PPV UV-Vis 吸收光譜 61
4.5.2 MEH-PPV光激發光（PL） 62
4.5.3 MEH-PPV電激發光（EL） 63
4.5.4 MEH-PPV CIE色度座標 64
4.6 MEH-PPV之元件薄膜AFM分析 65
4.7 MEH-PPV元件之田口分析 84
4.7.1 PEDOT-SC最佳參數比較 84
4.7.2 元件製備參數之田口方法分析概述 86
4.7.3 元件驅動電壓之田口分析 89
4.7.4 元件壽命之田口分析 92
4.8 MEH-PPV元件光電性質分析 95
4.8.1 MEH-PPV元件亮度分析 95
4.8.2 MEH-PPV元件壽命分析 96
4.8.3 MEH-PPV元件定電流分析 98
第五章 結論 100
參考文獻 102