臺灣博碩士論文加值系統

在本論文中，氮化鎵及其相關材料為目前已知發展藍綠光半導體元件的關鍵材料。在此，本論文針對氮化鎵利用X光繞射量測及光激螢光譜(PL)作深入的特性分析。首先介紹氮化鎵的發展背景與有機金屬化學氣相沉積、X光繞射量測、光激螢光譜及AFM量測技術。接著探討一系列不同條件下成長的氮化鎵薄膜特性，分析不同緩衝層的成長流量對氮化鎵磊晶層品質的影響。最後，在AFM及高倍數光學顯微鏡量測下可觀察到氮化鎵磊晶層之表面平滑度。X光繞射量測可得薄膜磊晶品質及PL光譜不同激發光強度下能階移動情形。

In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer.
Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 v
圖目錄 vi
一、 緒論1
二、 發展背景與實驗技術10
2.1 氮化鎵的發展背景10
2.2 氮化鎵之材料特性與晶體結構12
2.3 晶體磊晶成長模式12
2.4 不同方法成長之氮化鎵磊晶薄膜14
2.4.1 有機金屬化學氣相沉積14
2.4.2 分子束氣相沉積15
2.4.3 氫化物氣相沉積15
三、 有機金屬化學氣相沉積系統和量測儀器27
3.1 有機金屬化學氣相沉積系統27
3.2 光激螢光譜量測系統27
3.3 Ｘ光繞射量測系統29
3.4 AFM量測系統30
四、 實驗方法及流程39
4.1 實驗方法39
4.2 實驗流程40
五、 結果與討論46
5.1 氮化鎵磊晶薄膜之表面分析46
5.2 低溫氮化鎵(LT GaN)緩衝層薄膜對氮化鎵(GaN)磊晶薄膜成長之影響46
六、 結論67
參考文獻 68

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