臺灣博碩士論文加值系統

本篇論文分為兩大部分，第一部份使用台積電所提供之CMOS 0.18微米製程與探微科技所提供之IPD製程來實現一個雙模態之壓控振盪器，透過切換上下兩組NMOS開關的導通與不導通來切換不同的模態，使用IPD製程來設計電路中所使用到的變壓器，透過IPD製程來改善被動電路元件高損耗與低品質因素之缺點，晶片實際量測之調諧範圍為19.3%與17.7%，核心電路之功率消耗各別為0.57 mW與2.37 mW 。第二部分使用台積電所提供之CMOS MEMS製程來實現所設計之寬頻放大器，電路內之部分電感採用堆疊式電感來縮小晶片的整體面積，電路設計採用電阻迴授技術來達到電路整體增益之上升，透過順向基底偏壓之技術來降低電源電壓與功率消耗，使用MEMS後製程在不影響CMOS電路特性之狀況下，減少寄生電容達到改善電路整體之特性，且MEMS後製程並不會影響CMOS電路的可靠度。晶片實際量測之|S11¬|在3.1~10.6 GHz各別在5 dB 以下， |S21|最大增益為 16 dB以上，量測之P1dB為 -13 dBm。

This thesis is divided into two sections, the first section using 0.18 µm CMOS process which is provided by Taiwan Semiconductor Manufacturing Company (TSMC) and glass-integrated passive device (GIPD) process which is provided by Walsin Technology Company to implementation the dual-mode VCO. The VCO switches the different modes by switching the turn on and turn off of the two sets of NMOS switches, using the GIPD process to design the transformers used in the circuit, and through the GIPD process to improve the disadvantages of high loss and low quality factor of the passive circuit components. The tuning range of chip measurement results is 19.3% and 17.7%, and the power consumption of the core circuits is respectively 0.57 mW and 2.37 mW.
The second section uses CMOS MEMS process provided by TSMC to implementation the design of the wideband amplifier. The inductor in the circuit is used to reduce the whole area of the chip by using the stack inductance. The circuit design adopts the resistance-feedback technology to achieve the increase of the overall gain of the circuit, and reduces the voltage and power consumption is reduced by the technology of the self-forward body bias. By using the MEMS process without affecting the characteristics of the CMOS circuit, reducing the parasitic capacitance to improve the overall characteristics of the circuit, and the MEMS process does not affect the reliability of the CMOS circuit. Measurement results |S11| at 3.1~10.6 GHz are relatively below 10 dB ,the |S21| Max gain in 16 dB, measured P1dB respectively -13 dBm.

摘 要 1
Abstract 2
誌 謝 4
Table of Contents 5
List of Figures 7
List of Tables 10
Chapter 1 Introduction 11
1.1 Motivation 11
1.2 Thesis Organization 13
Chapter 2 A CMOS/IPD Transformer-based Dual-mode VCO 14
2.1 Introduction of IPD 14
2.2 Introduction of VCO 16
2.2.1 Basic theory of oscillator 16
2.3 Type of oscillator 18
2.3.1 Ring Oscillator 18
2.3.2 LC-tank Oscillator 20
2.4 Dual-mode VCO 23
2.4.1 Circuit design 23
2.4.2 Design of transformer 26
2.4.3 Measurement results 29
2.5 Summary 36
Chapter 3 Design of a Wide Band Amplifier with Self-Forward Body Bias and Transformer-feedback Technique using MEMS Process 37
3.1 Introduction of Amplifier 37
3.1.1 Feedback amplifier architecture 40
3.1.2 Reactive feedback architecture 41
3.1.3 Current-reused architecture 42
3.1.4 Body bias architecture 43
3.2 Design of MEMS amplifier 44
3.2.1 Introduction of MEMS 44
3.2.2 CMOS-MEMS post processing 45
3.2.3 Circuit design 50
3.2.4 Design of stacked inductor & transformer 53
3.2.5 Measurement results 56
3.3 Summary 64
Chapter 4 Conclusion 65
Reference 66

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