臺灣博碩士論文加值系統

我們是利用脈衝雷射沉積法製備摻雜釓的氧化鋅薄膜，X光繞射顯示樣品維持原有的晶體結構，但c軸晶格常數減小。因為薄膜的厚度在300nm以下，所以拉曼散射光譜只獲得微弱的訊號，樣品的能隙發光強度隨著摻雜濃度上升而下降，缺陷發光則隨釓濃度上升而增加，主要的缺陷有鋅錯位及鋅間隙，所有的樣品僅有Zn0.95Gd0.05O在室溫具有鐵磁性，其餘皆為順磁性。室溫(300K)的m-H曲線，只有x=0.051有磁滯曲線，在氧壓為3×10-1mbar及這樣的濃度下室溫是有鐵磁性。

In this thesis, Gadolinium (Gd)-doped ZnO (Zn1-xGdxO) thin films were grown on c-sapphire by pulsed-laser deposition. The nominal Gd concentration is between 0% and 20%. The XRD patterns show that there is no secondary phase, and c-lattice constant decreases with increasing Gd density. Only one weak ZnO oscillation mode was observed from Raman spectroscopy because the thickness of the thin films is sm-aller than 300nm. Photoluminescence spectroscopy at different temperatures showed a slight decrease in band gap and increase in defect emissions as Gd concentration increases. The major defects are zinc vacancy and interstitial zinc. The room temperature m-H curves show that there is only hysteresis loop for 5.1% Gd, the rest show only paramagnetism.

Chapter1∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙1
Chapter 2 背景知識∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙4
2.1氧化鋅(ZnO)、釓(Gd)與藍寶石基板(Sapphire)性質∙∙∙∙∙∙∙∙∙∙∙4
2.2脈衝雷射蒸鍍法（Pulsed Laser Deposition, PLD）∙∙∙∙∙∙∙∙∙∙∙5
2.2.1原理∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙5
2.2.2不同氧壓氧化鋅電漿團∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙7
2.2.2 PLD鍍膜系統∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙7
2.3 X光繞射(X-Ray Diffraction) ∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙8
2.3.1 X光原理∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙8
2.3.2布拉格繞射∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙9
2.4光致螢光（Photoluminescence, PL）∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙11
2.4.1基本原理∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙11
2.4.2實驗過程∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙13
2.5拉曼光譜(Raman spectroscopy) ∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙14
2.6 X射線螢光光譜分析(EDXRF) ∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙15
2.7超導量子干涉儀(SQUID)與磁性簡介∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙16
2.7.1超導量子干涉儀(SQUID)簡介∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙16
2.7.2磁性簡介∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙17
Chapter 3實驗過程∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙19
3.1鍍膜條件∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙19
3.2靶材製作∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙20
3.3藍寶石(c-sapphire)基板清洗∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙20
3.4鍍膜步驟∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙20
Chapter 4 結果與討論∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙21
4.1氧化鋅薄膜的結構及光學特性Zn1-xGdxO(x=0∙∙∙∙∙∙21
4.2固定氧壓3×10-1mbar摻雜不同濃度釓元素成份分析(EDXRF) ∙∙∙∙∙23
4.3 固定氧壓3×10-1mbar摻雜不同濃度釓元素比較∙∙∙∙∙∙∙∙∙∙∙25
4.3.1 不同濃度釓元素比∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙25
4.3.2 Zn1-xGdxO x=0.021與0.051 氧壓3×10-1mbar PL譜線分∙∙27
4.4拉曼光譜分析∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙28
4.5 磁性分析∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙30
Chapter 5 結果討論與未來展望∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙31

[1]M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas, Phys. Rev. Lett. 61, 2472 (1988)
[2]G. Binasch, P. Grünberg, F. Saurenbach, and W. Zinn, Phys. Rev. B 39, 4828 (1989).
[3]S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
[4]駱芳鈺, 台灣磁性技術技術協會, 會訊 50 期, 2009.
[5]H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. End, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 69, 363 (1996).
[6] H. Ohno, Science 281, 951 (1998).
[7]H. Ohno, D. Chiba, F. Matsukura, T. O. E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature 408, 944 (2000).
[8]T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
[9]T. Dietl, H. Ohno, and F. Matsukura, Phys. Rev. B 63, 195205 (2001).
[10] Nikoleta Theodoropoulou , Vinith Misra, John Philip, Patrick LeClair,Geetha P. Berera, Jagadeesh S. Moodera, Biswarup Satpati and Tapobrata Som, J. Magn. Magn. Mater.300, 407–411(2006)
[11] C. Song, K. W. Geng, F. Zeng, X. B. Wang, Y. X. Shen, and F. Pan, Phys. Rev. B 73, 024405(2006)
[12] X X Wei, C Song 1, K W Geng, F Zeng, B He and F Pan, J.18, 7471–7479(2006)
[13] M. Subramanian, P. Thakur, M. Tanemura, T. Hihara, and V. Ganesan, J. Appl. Phys. 108, 053904 (2010).
[14] M. Subramanian,,a P. Thakur,M. Tanemura,T. Hihara,V. Ganesan,T. Soga,K. H. Chae,R. Jayavel,and T. Jimbo, J. Appl. Phys. 108, 053904 (2010)
[15] K. Potzger, Shengqiang Zhou, F. Eichhorn, M. Helm, W. Skorupa, A. Mücklich, and J. Fassbender, J. Appl. Phys. 99, 063906 (2006)
[16] STEPHEN BLUNDELL, Magnetism in Condensed Matter(OXFORD, 2001)
[17] S. T. LIM, W. D. SONG, K. L. TEO, T. LIEW and T. C. CHONG, Int. J. Mod Phys B. 23, 17 , 3550–3555(2009)
[18] Akira Onodera and Masaki Takesada, Electronic Ferroelectricity in II-VI Semicon-ductor ZnO(Japan , Hokkaido University)
[19] T. S. Herng , A. Kumar , C. S. Ong , Y. P. Feng , Y. H. Lu , K. Y. Zeng and J. Ding, SCIENTIFIC REPORTS(2012)
[20] U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho, and H. Morkoc, A comprehensive review of ZnO materials and devices, J. Appl. Phys. 98, 041301 (2005)
[21]簡志峰, 脈衝雷射蒸鍍法蒸鍍氧化鋅及氧化釓鋅薄膜,國立臺灣師範大學, 2011
[22] N. Kasai M. Kakudo, X-Ray Diffraction by Macromolecules(Springer, 2005).
[23] Joseph H. Simmons and Kelly S. Potter, Optical Materials, (San Diego, academic Press, 2000)
[24] J.C. Fan, K.M. Sreekanth, Z. Xie, S.L. Chang and K.V. Rao, Prog. Mater. Sci. 58 874–985(2013)
[25] Bixia Lin, Zhuxi Fu, and Yunbo Jia, Appl. Phys. Lett. 79, 943 (2001)
[26] Ewen Smith,and Geoffrey Dent, Modern Raman Spectroscopy - A Practical Ap-proach(John Wiley & Sons, 2005)
[27]辜聖閎,Structural、Optical and Electrical Properties of stable P-type Al Doped ZnO:N Films Using Sol-Gel Process,國立台灣科技大學
[28] 謝宜敦, 氧化鋅摻雜銅及鎳之物性研究,國立台南大學
[29] M. Ahmad, E. Ahmed, Z.L. Hong, J.F. Xu, N.R. Khalid, A. Elhissi, and W.Ahmed, Ap-plied Surface Science ,274,273–281(2013)
[30]許閔翔,覆蓋式高溫超導磁量計之製作與特性研究,中原大學, 2006
[31]魏嘉瑩, 釓摻雜氧化鋅鋁透明導電薄膜特性分析, 國立中央大學
[32] M. Subramanian, P. Thakur, M. Tanemura, T. Hihara,V. Ganesan,T. Soga,K. H. Chae, R. Jayavel, and T. Jimbo, J. Appl. Phys. 108, 053904(2010)