臺灣博碩士論文加值系統

本論文主要分為兩大部分。第一部分針對錳摻雜於氮化鎵與氮化鋁鎵雙層結構作為p-i-n太陽能電池之主動層進行光電特性的探討。利用穿透率量測、電致發光光譜及太陽能模擬量測太陽能電池相關參數，了解元件光電特性，並透過外部量子效應與各種結合雙雷射系統之量測，深入了解中間能帶的吸收特性與載子傳輸機制。
在AM1.5G太陽光模擬量測結果中，錳摻雜的試片光電流有顯著提升，使得元件光電轉換效率提升。而從外部量子效應量測，可以推斷光電流的增加，是因為中間能帶的形成，材料可以吸收額外長波段的光子所致。而從電致發光頻譜量測可於長波段觀察到額外的光訊號，推測確實有中間能帶的形成所造成的發光，利用其發光波長換算能階位置，與文獻對照相符合。
第二部分則是氮化鎵摻雜錳結合表面電漿子應用於光電化學系統產氫之研究。依據論文第一部分之研究，利用氮化鎵摻雜錳形成中間能帶作為半導體表面材料，增加額外長波段光子之吸收，並結合表面電漿共振，增加可見光波段的吸收，及散射現象，增加光電元件對於入射光的吸收。預期可以提升光電流，同時產生更多的氫氣。
從長時間光電化學產氫實驗可以發現具有表面電漿結構的試片，電流密度、氫氣產量、能量轉換效率與氫氣產率皆優於原試片。並利用濾光片，僅利用波長大於400nm的光能入射至工作電極，證實具有金屬銀奈米粒子結構之元件因光散射效應可增加光捕捉的能力，並於可見光波段有額外的吸收，有效提高光電流、提升效率。

This study is divided into two parts. In the first part, we focused on the optical and electrical characteristics of Mn-doped GaN and AlGaN as the absorption layers applied to the intermediate band solar cells. According to the transmittance spectrum, exhibited that the Mn-related band was formed within the forbidden band of GaN and AlGaN. Therefore, aside from absorbing the photons with the energy more than the bandgap of the material, the energy that higher than the difference between the intermediate band and the valence or conduction band could also be absorbed. At the result of the AM1.5G solar simulator indeed showed an obvious enhancement of the photocurrent density, as well as the energy conversion efficiency.
In order to verify the existence of the intermediate band, we utilized the measurement of the electroluminescent spectra and external quantum efficiency. And using the dual laser system to analyze its electron transfer mechanism.
On the other hand, Mn-doped GaN combined with surface plasmon structure applied to the photoelectrochemical system to produce the hydrogen is the second part of the study. The devices with surface plasmon structure could enhance the light trapping ability by scattering effect and adsorb the photons in visible light region result in the enhancement of the photocurrent density and the energy conversion efficiency. Furthermore, we designed the experiment by filtering the light whose wavelength is under 400nm to confirm the statement above.

摘要 I
誌謝 IX
目錄 X
表目錄 XIII
圖目錄 XIV
第一章 序論 1
1.1 前言 1
1.2 中間能帶太陽能電池簡介（Intermediate Band Solar Cell） 2
1.3 表面電漿子簡介 （Surface Plasmon） [21-22] 5
1.4 研究動機與論文架構 6
第二章 基礎理論背景 9
2.1 太陽能電池簡介 9
2.2 太陽光譜 [41] 9
2.3 太陽能電池等校電路模型與元件各項參數分析 [40-41] 10
2.3.1 開路電壓（Open-Circuit Voltage，VOC） 12
2.3.2 短路電流（Short-Circuit Current，ISC） 13
2.3.3 最大輸出功率（PMAX） 13
2.3.4 填充因子（Fill Factor，FF） 14
2.3.5 光電轉換效率（Energy Conversion Efficiency，η） 14
2.4 頻譜響應（Spectral Responsivity，SR） 15
2.5 外部量子效應（External Quantum Efficiency，EQE） 15
2.6 氮化鎵材料摻雜錳之理論背景 16
2.7 半導體光電化學原理 16
2.7.1 光電化學系統 16
2.7.2 半導體光電化學反應 17
2.8 表面電漿子之理論背景 20
2.8.1 電漿子應用於光電元件 21
第三章 探討主動層氮化鎵/氮化鋁鎵異質結構摻雜錳形成中間能帶太陽能電池之特性研究 22
3.1 中間能帶太陽能電池結構與製程 22
3.1.1 中間能帶太陽能電池結構 22
3.1.2 中間能帶太陽能電池製程 24
3.2 量測儀器系統 28
3.2.1 量測系統 28
3.2.2 實驗儀器與藥品 32
3.3 量測分析 35
3.3.1 穿透率量測分析 35
3.3.2 暗態電壓電流量測分析 36
3.3.3 AM1.5G太陽能模擬器（Solar Simulator）量測分析 38
3.3.4 電致發光光譜（Electroluminescent spectra, EL spectra）量測分析 40
3.3.5 外部量子效應（EQE）量測分析 46
3.3.6 高聚光太陽能量測分析 47
3.3.7 變功率雷射之電致發光光譜量測分析 55
3.3.8 雙光源外部量子效應量測分析 59
3.3.9 雙雷射之電壓電流密度量測分析 63
3.4 結果與討論 68
第四章 探討氮化鎵摻雜錳結合表面電漿子應用於光電化學系統之特性研究 69
4.1 元件結構製程與實驗裝置 69
4.1.1 元件結構 69
4.1.2 元件製程 70
4.1.3 實驗裝置與量測儀器 76
4.2 量測分析與討論 77
4.2.1 穿透率量測分析 77
4.2.2 長時間（Long-time）光電化學產氫實驗量測分析 78
4.2.3 光電流密度－偏壓曲線圖（I－V Scan）量測分析 81
4.2.4 高通濾光片（Long-pass filter）濾光I－V Scan量測分析 82
4.2.5 Incident Photon-to-electron Conversion Efficiency（IPCE）量測 84
4.2.6 掃描電子顯微鏡（SEM）影像掃描分析 86
4.2.7 原子力顯微鏡（AFM）影像掃描分析 91
第五章 結論與未來展望 100
參考文獻 102

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