臺灣博碩士論文加值系統

本研究論文是使用Silvaco公司的模擬軟體來探討InAlAs/InGaAs/InP假型高電子遷移率電晶體在高頻的特性。此主要研究目的在於分析每層元件厚度的效應並且去優化此元件結構使之有最佳化。元件材料中顯示有最佳化的直流特性和射頻特性是相當重要的，像是汲極電流、轉導和電流截止頻率都從這些模擬結果中被萃取出來。
然而，模擬元件的真正意義在於首先必須要知道元件中的特性，才能找出適合的模型來模擬元件，再者對模型參數做校準使模擬值趨近於實際值。這對未來開發InAlAs/InGaAs/InP系統的元件有相當大的幫助和貢獻。

In my research thesis, to study high frequency of characteristics InAlAs / InGaAs/InP pHEMT have been simulated by using Silvaco software. The main objective of research is to study the effects of variations of supply layer thicknesses and then it has optimization to change the device structure. The important of DC and RF parameters such as drain current, transconductance and current gain cut off frequency are extracted from these simulation results which that device material exhibits optimized performance.
However, the simulation device of true meaning is necessary to understand the device characteristics and then can find suitable models to simulate device, furthermore, to make calibration of the model parameters could match simulated results with the measured results. It is important to develop the InAlAs / InGaAs /InP systems device with considerable assistance and contribution in the future.

Abstract(Chinese)……………………………………………………………i
Abstract(English)…………………………………………………………ii
Acknowledgement……………………………………………………………iii
Contents………………………………………………………………………iv
List of Tables………………………………………………………………vi
List of Figures……………………………………………………………vii
Chapter 1 Introduction……………………………………………………1
1-1 General Background……………………………………………………1
1-2 Motivation………………………………………………………………2
1-3 Thesis Content…………………………………………………………3
Chapter 2 Literature Review……………………………………………6
2-1 Introduction of Ⅲ-V Semiconductor……………………………6
2-2 Introduction of InxGa1-xAs/InAs/InxGa1-xAs Composite Channel in High Electron Mobility Transistors…………………7
2-3 In0.52Al0.48As/In0.53Ga0.47As/InP pHEMT Structure………9
2-4 In0.53Ga0.47As/InAs/In0.53Ga0.47As pHEMT Structure……10
2-5 In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel High Electron Mobility Transistors………………………………………12
Chapter 3 Simulation Software and Physical Models…………25
3-1Metal and Semiconductor Junction and Gate Recess………25
3-2Low Field Mobility of Electrons………………………………27
3-3Low/High-Field Transport in Pseudomorphic InxGa1-xAs / In0.52Al0.48As Heterostructure……………………………………28
3-4Poole-Frenkel Effect…………………………………………………29
3-5Simulation Foundation and Physical Models…………………31
Chapter 4 Simulation Results and Discussion of InAlAs/ InAs/ InGaAs pHEMT………………………………………………………47
4-1InAlAs/InAs/InGaAs pHEMT epitaxial structure……………47
4-2DC Characteristics of InAlAs/InAs/InGaAs pHEMT…………47
4-3RF Characteristics of InAlAs/InAs/InGaAs pHEMT…………49
4-4Variation of schottky barrier layer thickness…………49
4-5Variation of δ-doping concentration…………………………50
4-6Variation of spacer layer thickness…………………………50
4-7Variation of channel layer thickness………………………51
4-8Optimum DC characteristics of device………………………51
4-9Optimum RF characteristics of device………………………52
Chapter 5 Conclusion…………………………………………………77
References…………………………………………………………………79

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