臺灣博碩士論文加值系統

本論文研究在使用低成本，且能在常溫環境下操作的超音波噴霧熱裂解沉積法，沉積n型氧化鎂鋅薄膜於p型氮化鎵薄膜上，形成pn異質接面。再以熱蒸鍍沉積鈦/鋁作為陰極和鎳/金作為陽極，製作出具有發光與感光功能的異質接面光電二極體。
　　為了瞭解超音波噴霧熱裂解法沉積法所沉積的氧化鎂鋅薄膜特性，我們使用了(1) 光激發光，檢測氧化鎂鋅薄膜的發光波長、(2) X光電子能譜儀，檢測氧化鎂鋅薄膜的元素組成，(3) X光繞射儀，檢測氧化鎂鋅薄膜的晶體結構。
　　接著我們進行的電流-電壓量測、光輸出功率-注入電流量測，頻譜量測，確認在加上順向偏壓時，展現出發光二極體的特性，Mg0.1Zn0.9薄膜的導通電壓為3.7V，輸出功率為3.43mW，並且發現當鎂含量往上提升時，發光波長會由Mg0.1Zn0.9 370nm至Mg0.3Zn0.9 368nm逐漸藍移，接著進行光譜響應量測、偵測度量測、抑制比量測、響應時間量測，確認在加上逆向偏壓時，展現出感光二極體的特性，並且在Mg0.3Zn0.9有最大的響應16.4A/W(@350nm)，並且隨著鎂含量提升，感測的波長也逐漸從Mg0.1Zn0.9 350nm移至Mg0.4Zn0.9 310nm，有藍移的現象發生。
　　我們成功研製氧化鎂鋅/氮化鎵異質接面光電二極體。該光電二極體能夠利用偏壓控制二極體的工作狀態，當施加順向偏壓，二極體呈現發光二極體的功能；而當施加逆向偏壓，二極體呈現感光二極體的功用。

In this thesis, the ultrasonic spray pyrolysis deposition which has benefits of low-cost and room-temperature operation is used to deposit n-type MgZnO on the p-type GaN to form pn heterojunction. Ti/Al and Ni/Au are deposited by the thermal evaporator to serve as the cathode and the anode of the diode. The present diode can be used as light-emitting diode and photodiode.
In order to understand the properties of MgZnO thin films which is deposited by the ultrasonic spray pyrolysis deposition, the following material characterization techniques are used including: (1) photoluminescence, the emission wavelength of the MgZnO thin film, (2) X-ray photoelectron spectroscopy, the composition of the MgZnO thin film, (3) X-ray Diffractometer, the crystal structure of the MgZnO thin film.
The current versus voltage characteristic, light output power versus injection current characteristic, and emission wavelength spectrum characteristic are measured. The turn-on voltage of the light-emitting diode is 3.7V, the light output power is 3.4.mW. The emission wavelength occurs blue shift when the Mg contents increase. For estimate the performance of the photodiode, the diode is applied negative bias and the following characteristics are measured including, spectral photoresponse, detectivity, UV-to-visible rejection ratio, and response time characteristics. The photodiode has the largest photoresponse 16.4A/W at 350nm, and with increase of Mg content, the sensing wavelength also blue shift from 350nm (Mg0.1Zn0.9¬O) to 310nm (Mg0.4Zn0.6O).
MgZnO/GaN heterojunction optoelectronic diodes are fabricated successfully. The operation mode of the diode is controlled by the polarity of the applied voltage. When the positive voltage is applied, the diode is used as the light-emitting diode. When the negative voltage is applied, the diode is used as the photodiode.

摘要 I
第一章 導論 1
介紹 1
第二章 材料成長與元件製作 3
2.1 基板清洗 3
2.2 主動層沉積 4
2.3 披覆層成長 5
2.4 陰/陽電極 6
第三章 材料分析與元件量測 8
3.1 材料分析 8
3.1.1 光激發光 8
3.1.2 X光電子能譜儀 13
3.1.3 X光繞射儀 17
3.2 氧化鎂鋅光電二極體 20
3.2.1 發光二極體 20
3.2.2 感光二極體 30
第四章 結論 44
參考文獻 45

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