臺灣博碩士論文加值系統

全無機鈣鈦礦如CsPbX3(X=Cl, Br, I)因相比於有機-無機混合鈣鈦礦更不易受到水氣、氧氣方面的影響，擁有較高的穩定性，同時又兼具窄光譜、波長可調…等優異的光學特性，讓其近期在光電領域應用上備受關注。本論文針對CsPbBr3發光二極體元件為研究主軸，嘗試找尋更簡易的製程方式--一個近似全旋轉塗佈製程。更明確的說，我們將ZnO奈米粒子分散於Propylene glycol methyl ether acetate(PGMEA)中(此藥物由台灣奈晶公司提供)，並將其旋轉塗佈於發光層CsPbBr3上，當作電子傳輸層，實驗結果証明此方法不會破壞CsPbBr3膜面，進而改善元件存活時間及降低電流值。
最後通過調整發光層CsPbBr3的濃度與溶劑和ZnO的轉速來達到最佳化實驗參數，使元件獲得較佳的外部量子效率。

All-inorganic perovskites such as CsPbX3 (X=Cl, Br, I) are less susceptible to moisture and oxygen than organic-inorganic hybrid perovskites. With such chemical stability and excellent optical properties, e.g. narrow spectral width and adjustable emission wavelength, it has attracted much attention for optoelectronic applications. In this thesis, we focus on the CsPbBr3 light-emitting diode, and try to simplify the fabrication processes–a nearly fully coating processes. More specifically, ZnO nanoparticles dispersed in Propylene glycol methyl ether acetate (PGMEA, obtained from TWNC) were spin-coated on top of the emission layer of CsPbBr3, serving as an electron transport layer. The experimental results show that this method does not damage the CsPbBr3 film surface, thereby improving the survival time of device and reducing current value.
Finally, by adjusting the concentration and dispersed solvent of CsPbBr3 and the speed of ZnO nanoparticle spin coating to optimize the fabrication parameters, the devices with the relatively higher external quantum efficiency were obtained.

目錄
摘要 I
Abstrat II
致謝 III
目錄 IV
表目錄 VI
圖目錄 VII
第一章 序論 1
1-1 鈣鈦礦的歷史及應用發展 1
1-2 鈣鈦礦發光二極體元件介紹 2
1-3 研究動機與目的 3
第二章 基本原理、理論與回顧 6
2-1 全無機鈣鈦礦量子點的晶體結構、組成與特性 6
2-2 全無機鈣鈦礦量子點熱注入合成法原理 9
2-3 全無機鈣鈦礦量子點之光電特性與原理 11
2-3-1 光致發光原理(Photoluminescence, 簡稱PL) 11
2-3-2 電致發光原理(Electroluminescence, 簡稱EL) 12
2-3-3 鈣鈦礦發光二極體結構與原理 13
第三章 實驗製程、設備與量測儀器 15
3-1 實驗製程 15
3-1-1 鈣鈦礦量子點Cs-Oleate前驅物合成 15
3-1-2 鈣鈦礦量子點CsPbBr3合成 16
3-1-3 鈣鈦礦量子點CsPbBr3純化 17
3-1-4 鈣鈦礦量子點發光二極體元件製程 18
3-2 實驗設備應用介紹 19
3-3 實驗量測儀器介紹與架構 21
3-3-1 橢圓偏光儀(型號:J.A. Woollam ALPHA-SE) 21
3-3-2 光電特性量測系統(型號:Aglilent 4155c) 22
3-3-3 場發射槍掃描式電子顯微鏡
(Field-Emission Scanning Electron Microscope,
簡稱FE-SEM) 24
第四章 實驗規劃及結果分析 25
4-1 實驗流程規劃設計 25
4-2 電子傳輸層TPBi於CsPbBr3膜面之影響 27
4-3 電子傳輸層ZnO於CsPbBr3之破壞性影響 28
4-4 ZnO-PGMEA應於PeLED元件之結果分析 29
4-5 PeLED元件最佳化實驗參數結果分析 33
4-5-1 TPBi、ZnO-PGMEA之於PeLED電性量測結果分析 35
4-5-2 發光層CsPbBr3不同濃度之於PeLED電性量測結果分析 38
4-5-3 電子傳輸層ZnO不同轉速之於PeLED電性量測結果分析 40
4-5-4 發光層CsPbBr3不同溶劑之於PeLED電性量測結果分析 41
4-5-5 PeLED元件最佳化電性量測結果 43
第五章 結論與未來展望 47
參考文獻 48

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