臺灣博碩士論文加值系統

本論文以電漿輔助化學氣相沉積系統研製非晶矽及矽鍺太陽能電池之元件分析。本論文可分為二個部分，第一部分研究非晶矽薄膜太陽能電池之分析；第二部分研究矽鍺太陽能電池本質層矽鍺薄膜與元件之分析。
非晶矽薄膜太陽能電池研究中，使用超高頻電漿輔助化學氣相沉積系統(VHF-PECVD)以250 ℃研製非晶矽薄膜太陽能電池(ITO / a-SiC (p) / a-Si (i) / a-Si (n) / Al)於玻璃基板上，調變n層和本質層的厚度其太陽能電池轉換效率分別為4.69 %和5.11 %。再製作堆疊式(a-Si / a-Si)太陽能電池調變上層電池的p層厚度其推疊式太陽能電池轉換效率為4.17 %。
非晶矽鍺太陽能電池研究中，使用高頻電漿輔助化學氣相沉積系統(HF-PECVD)以200 ℃研製非晶矽鍺薄膜太陽能電池 (ITO / a-SiC (p) / a-SiGe (i) / a-Si (n) / AZO / Ag)於玻璃基板上，調變本質層不同氫稀釋比例和鍺濃度的矽鍺薄膜對太陽能電池效率之影響。製作的非晶矽鍺薄膜以AFM、FE-SEM、SIMS、FTIR、光暗電導比例值及霍爾效應量測系統等量測分析及非晶矽鍺薄膜太陽能電池以外部量子效率及轉換效率等量測分析。結果顯示調變本質層不同氫稀釋比例和鍺濃度的太陽能電池轉換效率分別為4.37 %和4.45 %。

In this study, application of high-frequency plasma enhanced chemical vapor deposition to characterize a-Si and a-SiGe:H thin film solar cells. The paper consists of two parts: the first part discusses characteristics of the intrinsic layer, n-layer and tandem of amorphous silicon solar cell; the second part discusses characteristics of the intrinsic layer of amorphous silicon germanium film as well as solar cell device.
In this study of the a-Si:H thin film solar cells. The structure a a-Si:H solar cells is (ITO/a-SiC(p)/a-Si(i)/a-Si(n)/AZO/Ag), and the temperature of device were 250 ℃. The a-Si:H thin film solar cells was deposited on the glass, and we analyzed by measuring solar simulator. The optimization conversion efficiency are 4.69 %, 5.11 % and 4.17%, respectively.
In this study of the a-SiGe:H thin film solar cells. The structure a a-SiGe:H solar cells is (ITO/a-SiC(p)/a-SiGe(i)/a-Si(n)/AZO/Ag), and the temperature of device were 200 ℃. The a-SiGe:H thin film solar cells was deposited on the glass, and we analyzed the thin film properties by measuring AFM, FE-SEM, SIMS, FTIR, Photo conductivity (σph) and dark conductivity (σd) and Hall effect. Mainly, processing parameters was adjusted to study and discuss the electrical and optical properties of the intrinsic layer of amorphous silicon germanium film solar cells. By optimizing the Si1-XGeX, adjusting the RH %, a-SiGe thin film characteristics was studied including deposition rate, optical properties, electrical properties. The optimization conversion efficiency is 4.45 %.

摘要.......................................................i
Abstract.................................................iii
致謝.......................................................v
目錄......................................................vi
表目錄.....................................................ix
圖目錄......................................................x
第一章 緒論.................................................1
1.1 前言...................................................1
1.2 研究動機................................................3
第二章 文獻探討..............................................4
2.1非晶矽太陽能電池之文獻回顧..................................4
2.2非晶矽鍺太陽能電池之文獻回顧.................................4
2.3堆疊型太陽能電池之文獻回顧..................................6
第三章 實驗製作流程與儀器分析..................................8
3.1實驗製作流程..............................................8
3.1.1氫化非晶矽及矽鍺薄膜的實驗製作流程..........................8
3.2製程設備.................................................9
3.2.1氫化非晶矽薄膜製程設備(NFU)...............................9
3.2.2氫化非晶矽鍺薄膜製程設備(MDU)............................11
3.3 基板的清洗.............................................15
3.4 薄膜的沉積.............................................16
3.4.1 氫化非晶矽薄膜的沉積(NFU)..............................16
3.4.2 氫化非晶矽鍺薄膜的沉積(MDU).............................18
3.5 儀器量測原理與分析方法....................................21
第四章 結果與討論...........................................29
4.1 非晶矽薄膜太陽能電池之研究(NFU)...........................29
4.1.1調變不同的N層薄膜厚度對元件效率之影響......................29
4.1.2調變不同的本質層薄膜厚度對元件效率之影響....................32
4.1.3調變不同的上層電池的P層薄膜厚度對堆疊型太陽能電池效率之影響....35
4.2 非晶矽鍺薄膜太陽能電池之研究(MDU)..........................38
4.2.1 調變本質層氫稀釋比對元件效率的影響........................38
4.2.2 調變本質層矽鍺濃度比例對元件效率的影響.....................48
第五章 結論...............................................57
參考文獻...................................................59
Extended Abstract.........................................61
簡歷(CV)..................................................65

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