臺灣博碩士論文加值系統

氧化鋅是一具有十分多樣性質的材料，它可以被應用在電學、聲學、光學等眾多領域，其中因為氧化鋅的寬能隙(3.37eV)、高激子束縛能(60meV)以及良好的機械與熱穩定性，成為製作發光二極體的熱門材料[1]。傳統製程中，氧化鋅常以異質磊晶的方式成長於藍寶石基板上，但由於藍寶石基板與氧化鋅之間較大的晶格不匹配，使得氧化鋅內部產生大量的差排，這些缺陷使得氧化鋅的發光表現不如預期，為了解決這個問題，研究人員改以同質磊晶的方式在氧化鋅基板上成長氧化鋅以避免差排產生，藉此提高元件的發光效能。除此之外，氧化鋅的晶格常數也與目前被大量使用的發光二極體材料氮化鎵相近，基於相同的理由，高品質氧化鋅基板的需求隨之大量增加，在許多製作氧化鋅單晶的方法中，水熱法由於較低的成本、較快的成長速率以及大尺寸的晶體成長而被廣泛運用，在本研究中，我們以較簡易的方式，使用鐵氟龍內膽取代白金內膽，並且由射頻磁控濺鍍製備氧化鋅/雲母異質結構取代傳統水熱法中的氧化鋅單晶晶種做為晶種層。所得到的氧化鋅單晶將以X光繞射儀、螢光激發光譜及掃描式電子顯微鏡鑑定其品質。

Zinc oxide is a multifunctional material for electronics, acoustics and photonics. Owing to the wide band gap (3.37eV), the large excition-binding energy (60meV), good mechanical and thermal stability. Zinc oxide has been considered to be one of the promising material for light-emitting diode. Typically, zinc oxide is grown on sapphire substrate, but its performance is not as good as bulk zinc oxide due to the defects between zinc oxide and sapphire interface. To avoid the high dislocation density which originate from the large lattice mismatch of heterostructures, people tend to use homoepitaxy to grow zinc oxide. On the other hand, the lattice constant of zinc oxide is similar to gallium nitride, the currently used material for light emitting diode. Therefore, a high quality zinc oxide single crystal substrate is needed for this kind of application. Among varies methods of growing zinc oxide single crystal, hydrothermal is the mostly used process to obtain high quality single crystal due to its low cost, large crystal size and high growth rate. In our study, we try to get high quality zinc oxide single crystal with hydrothermal process in an easier way. Hence, we use Teflon inner container to replace platinum inner container to undergoing the hydrothermal process. Besides, instead of using single crystal zinc oxide as seed, we also replace it with zinc oxide/muscovite heterostructure. Then, the quality of the as-grown crystal is confirmed with X-ray diffraction, photoluminescence and scanning electron microscopy.

中文摘要 ……………………………………………………… i
英文摘要 ……………………………………………………… ii
誌謝 ……………………………………………………… iii
目錄 ……………………………………………………… iv
圖目錄 ……………………………………………………… v
一、 緒論………………………………………………… 1
二、 文獻回顧…………………………………………… 3
2.1 雲母的結構與應用………………………………… 3
2.2 氧化鋅的結構與應用……………………………… 4
2.3 氧化鋅單晶於水熱法之製程……………………… 6
三、 實驗方法…………………………………………… 8
3.1 實驗流程…………………………………………… 8
3.1.1 氧化鋅晶種製備…………………………………… 8
3.1.2 水熱法儀器及溶液調配…………………………… 8
3.2 製程儀器…………………………………………… 10
3.2.1 射頻磁控濺鍍……………………………………… 10
3.2.2 水熱法……………………………………………… 11
3.3 分析儀器…………………………………………… 12
3.3.1 高解析X光繞射儀………………………………… 12
3.3.2 掃描式電子顯微鏡………………………………… 13
3.3.3 光致發光光譜儀…………………………………… 14
3.3.4 紫外光/可見光分光光譜儀………………………… 15
四、 結果與討論………………………………………… 16
4.1 以射頻磁控濺鍍法製作之氧化鋅晶種層………… 16
4.2 於不同環境下以水熱法成長氧化鋅單晶………… 17
4.2.1 反應溫度…………………………………………… 17
4.2.2 降溫速率…………………………………………… 18
4.2.3 溶液鹼度…………………………………………… 19
4.2.4 粉末原料粒徑大小………………………………… 20
4.2.5 檸檬酸鈉添加……………………………………… 21
4.2.6 晶種層於水熱罐內位置…………………………… 22
4.3 整合各項條件後之成果…………………………… 23
五、 結論………………………………………………… 25
參考文獻 ……………………………………………………… 26
附錄一 ……………………………………………………… 29

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