臺灣博碩士論文加值系統

在過去幾十年雪崩型檢光二極體(APD)已廣泛應用在長距離光纖通訊系統，而最近幾年高速率雪崩型檢光二極體在長及短距離光纖通訊、雷射測距儀、雷射光電感測器等應用，越來越受到重視。在雪崩層材料選擇方面；砷化銦鋁(In0.52Al0.48As)的晶格常數與砷化铟鎵(In0.53Ga0.47As)和磷化銦(InP)是匹配外，另外 In0.52Al0.48As具有比InP較大的電子游離係數，可獲得較低的超額雜訊及高的增益頻寬乘積等特性，因此InAlAs材料層比InP材料更適合作為雪崩層材料。本論文研製具有吸收層、漸變層、電荷層與雪崩層分離結構(SAGFM) 背向入光之砷化铟鋁-砷化銦镓雪崩型檢光二極體及探討如何將InP微透鏡於APD元件的背面。
本論文包括: (1) APD磊晶結構之設計，利用電場分布計算出最佳磊晶結構；(2)APD元件光罩設計、元件製程，(3)APD元件背面製作出微透鏡，(4)APD元件直流測量與特性分析；包含電容、崩潰電壓、擊穿電壓、暗電流、增益、及響應度；(4)APD元件交流測量與特性分析，包含頻率響應(f3dB)、眼圖分析。
所研製出之微透鏡如下：透鏡直徑70 μm，透鏡高度 8.61 μm，焦距為110.19 μm ，曲率半徑為75.43 μm。也透過ASAP光學模擬軟體計算出之焦距為109.31 μm， Beam width為17.36 μm。另外，所研製出之高速率砷化銦鋁/砷化銦鎵結構APD晶粒特性：崩潰電壓為27.6V，擊穿電壓為16.5V，在0.9 VBR時暗電流為67.9 nA，增益為8.87，電容為0.204 pF。在頻響特性的部分，輸入1 µW的光功率及增益為5時，3-dB頻寬為6.39 GHz。在眼圖量測的部分，輸入0.1 mW的功率及位元速率10 Gb/s時;眼圖上升時間為62.5 ps。

In the past few decades, avalanche photodiodes (APDs) have been widely used in long distance fiber-optic communication systems. In recent years, which more high-speed avalanche photodiodes are used in long or short distance fiber optic communication and laser rangefinder. The application of APD device is getting more and more attention. In terms of avalanche layer material selection, the lattice constant of indium aluminum arsenide (In0.52Al0.48As; InAlAs) is matched with indium gallium arsenide (In0.53Ga0.47As; InGaAs) and indium phosphide (InP), and InAlAs has a larger electron free coefficient than InP, which can obtain lower excess noise and higher gain bandwidth product. Therefore, the InAlAs material layer is more suitable as an avalanche layer material than InP material. In this paper, we developed an InAlAs/InGaAs APD with an absorber layer, graded layer, field-control layer, and an avalanche layer separation structure (SAGFM), and we discussed how to fabricate the InP microlens on the back-side of APD devices.
This study includes: (1) Design of APD epitaxial structure, using simulation software to calculate electric field distribution to obtain the optimal epitaxial structure; (2) APD device mask design and device processing, (3) InP microlens fabrication on the back-side of APD device, (4) DC measurement and characteristic analysis; including capacitance, breakdown voltage, dark current, gain, and responsiveity; (5) AC measurement and characteristic analysis, including frequency response (f3dB) and eye diagram analysis.
The InP micro lens fabricated and measured as follows: lens diameter is 70 μm, lens height is 8.61 μm, focal length is 110.19 μm, and radius of curvature is 75.43 μm. The focal length and beam width calculated by the ASAP optical simulation software are 109.31 μm and 17.36 μm, respectively.
In addition, the performance of high-speed InAlAs/InGaAs structure APD: the breakdown voltage is 27.6V, the paunch-through voltage is 16.5V. The dark current is 67.9 nA and the gain is 8.87, and the capacitance is 0.204 pF, which APD was biased at 0.9 VBR. In the frequency response, the 3-dB bandwidth is 6.39 GHz when the laser input power is 1 μW and the gain at 5. In the part of the eye diagram measurement, when the laser input power of 0.1 mW and the bit rate of 10 Gb/s; the eye diagram analysis showed that the rise time is 62.5 ps.

摘要 i
ABSTRACT iii
致謝 v
目錄 vi
表目錄 viii
圖目錄 ix
第一章 簡介 11
1.1背景及目的 12
1.2 微透鏡製作背景 14
1.3 研究動機 16
第二章 高台型SAGFM雪崩型檢光二極體之工作原理 18
2.1 工作原理 18
2.2 暗電流工作機制 19
2.3 元件內部電場計算 22
2.4 雪崩增益Multiplication gain)的物理機制 27
2.5 元件電容工作機制 29
2.6 眼圖分析 31
2.7 頻率響應分析 33
第三章 磷化銦微透鏡製作原理與模擬 36
3.1 磷化銦微透鏡光學原理與製作方法 36
3.1.1 透鏡光學原理 36
3.1.2 磷化銦微透鏡製作方法 39
3.2 微透鏡光學模擬軟體ASAP介紹 43
第四章 元件結構與製程 44
4.1 實驗架構 46
4.1.1 論文架構 46
4.1.2 交流特性量測架構 46
4.1.2.1 頻響量測架構 46
4.1.2.2 眼圖量測架構 47
4.2 高速率SAGFM-APD磊晶結構設計 48
4.3 高速率SAGFM-APD晶粒製作流程 50
4.4 InP微透鏡製作 52
4.4.1 InP微透鏡光罩設計 52
4.4.2 Micro-Lens微透鏡製程 54
第五章 結果與討論 60
5.1 高速率雪崩型SAGFM-APD元件特性 60
5.1.1暗電流-電壓、照光電流-電壓及增益 60
5.1.2順向-電壓分析 62
5.1.3電容-電壓分析 64
5.1.4頻率響應分析 65
5.1.5眼圖分析 66
5.2磷化銦微透鏡特性分析 68
5.2.1微透鏡外觀分析 68
5.2.2光學模擬ASAP分析 75
第六章 結論與未來工作 89
6.1 結論 89
6.2 未來工作 90
參考文獻 92

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