臺灣博碩士論文加值系統

本論文使用實驗室自組式雙加熱有機金屬氣相沉積系統(Two-Heater MOCVD)成長 p 型氮化鎵薄膜，研究目的是為了成長保護長波長(橙 光,590nm)LED 主動發光層所需的低溫 p 型氮化鎵，因此我們透過研究不 同基板溫度，主要關注低溫(基板溫度:850°C)的部分，並搭配自組式雙加 熱 MOCVD 的上加熱溫度探討上加熱溫度對於成長低溫 p-GaN 時薄膜的 電學特性影響。
傳統 MOCVD 在磊晶溫度低於 950°C 會造成電阻率上升，而我們的雙 加熱 MOCVD 透過上加熱溫度在基板 800°C 時仍可維持電阻率 3(Ω ⋅ cm) 以下，與高溫相同電性品質。並且根據電中性分析，傳統系列雖然有較高 的 Mg 濃度和較低的 H 濃度，但由於過高的碳濃度(4x10E18cm-3)造成低溫 電洞濃度下降，而雙加熱系列在低溫擁有較低的碳濃度(5x10E17cm-3)，因 此能使電洞濃度不會隨基板溫度下降。
而碳濃度增加主要牽涉到磊晶時碳融入效率，而碳融入效率和上加熱溫度 息息相關，當上加熱溫度降低至 1050°C 以下時，碳融入效率會開始劇 增。藉由阿瑞尼斯反應分析和腔體溫度模擬，推論出碳融入效率主要為前 驅物 TMGa 反應途徑中的 DMGa 之自由基反應在氣相裂解不全所導致。

In this thesis, we use the home-made Two-Heater MOCVD to grow the p-GaN thin films. The purpose of the study is to grow low temperature p-type GaN required to protect the active layer of long wavelength (orange, 590 nm) LEDs. We investigate on different substrate temperature. Main concerning the low-temperature growth (850°C), and with the unique ceiling temperature to discuss the ceiling temperature effect on the low-temperature p-GaN’s electrical properties.
The resistivity of p-GaN will rise while the substrate temperature lower than 950°C. For our T.H. MOCVD by using the ceiling temperature, we can maintain the resistivity below 3(Ω ⋅ cm) same as the high-temperature growth quality. According to the electrical neutral analysis, although the conventional series has a higher Mg concentration and a lower H concentration, hole concentration is lowered due to the excessive C concentration (4x101E8cm-3) at Ts=850°C . Compared with conventional series , the two-heater series has a lower C concentration (5x10E17cm-3) at Ts=850°C, so the hole concentration does not decrease with the substrate temperature.
The increase of C concentration mainly involves the efficiency of C in epitaxial deposition, and the efficiency of C incorporation is closely related to the ceiling temperature. When the ceiling temperature is lowered below 1050 °C, the efficiency of C incorporation will start to increase dramatically. Through the analysis of the Arrhenius reaction and the simulation of the cavity temperature, it is concluded that the C-inclusion efficiency is mainly caused by the incomplete gas phase cracking of the DMGa in the precursor TMGa reaction pathway.

目錄
中文摘要 ...............................................................................................i 英文摘要 .............................................................................................. ii 致謝 ....................................................................................................iv 目錄......................................................................................................v
圖目錄................................................................................................ vii 表目錄..................................................................................................x 一、 緒論............................................................................... ...........1
1.1 GaN(氮化鎵)材料簡介......................................................................1 1.2 P-GaN 發展歷史..............................................................................1 1.3 LED 產業簡介..................................................................................2 1.4 Amber LED 技術瓶頸.....................................................................4
二 量測儀器與原理................................................................................8
2.1 X光繞射........................................................................................8 2.2 霍爾量測....................................................................................10 2.3 二次離子質譜儀.........................................................................15
三、理論背景....................................................................................17
3.1 X光繞射對於差排缺陷的分析...................................................17
3.2 電中性原理..................................................................................18
3.3光與色彩......................................................................................31
四、樣品製備...................................................................................37
4.1 磊晶..............................................................................................37
4.2 活化退火..................................................................................39
4.3 濕蝕刻.......................................................................................40 4.4 電極製作...................................................................................41
五、結果與討論.............................................................................42
5.1 實驗簡介..................................................................................42
5.2 上加熱溫度對p-GaN薄膜電性..............................................42
5.3 上加熱溫度對碳濃度影響.........................................................56
六、結論............................................................................................65 參考文獻..............................................................................................66

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