臺灣博碩士論文加值系統

氧化鋅，一個II-VI族的化合物半導體，在室溫下能隙約為3.37eV，且有很大的激子束縛能，約為60meV，近年來成為非常吸引人的材料，特別是在紫外光段短波長的發光二極體及雷射裝置。
本研究是使用電漿輔助有機金屬化學氣相沉積法在砷化鎵基板上成長氧化鋅薄膜，再利用快速熱退火製程將基板中的砷原子擴散進入n型氧化鋅薄膜中，使其轉變成為p型氧化鋅薄膜，我們分為兩個主題，第一個是通氮氣，另一個是通氧氣進行快速熱退火，探討不同快速退火的溫度及持溫時間對氧化鋅薄膜特性、光電特性與表面型態之影響。我們證實快速熱退火有助於砷原子在擴散時，會進入適當的位置。在成長氧化鋅溫度為185℃，RTA 425℃ 通入氮氣，由 n 型轉 p 型，電洞濃度為 2.38 × 1020 cm-3，電阻率為 6.88 × 10-4 Ωcm，移動率為 12.7 cm2/Vs，而在成長氧化鋅溫度為190℃，RTA 450℃ 通入氧氣，由 n 型轉 p 型，電洞濃度為 3.07 × 1020 cm-3，電阻率為 7.31 × 10-4 Ωcm，移動率為 24.1 cm2/Vs。

Zinc oxide (ZnO) is one of II-VI compound semiconductor with a wide band gap of 3.37 eV at room temperature and a large excition binding energy of 60meV, which makes it be an attractive material recently, especially in the application of blue and ultraviolet light-emitting diodes and laser.
In this thesis, the ZnO film growth on gallium arsine (GaAs) substrate was prepared by double plasma-enhanced metal-organic chemical vapor deposition system (DPEMOCVD). Then, the as-grown ZnO film was treated with rapid thermal process by rapid thermal annealing. With the thermal energy, the arsenic atoms can diffuse into the ZnO film as a p-type dopant. Two subjects were investigated in this thesis, including annealing in oxygen and nitrogen ambient. The effects of annealing temperature and time related to the optoelectronic characteristics of ZnO film and surface structure were investigated in this thesis in oxygen and nitrogen. The experiment results indicated that under the condition of grows substrates temperature at annealing temperature of 425℃ and annealing time of 1 minute in nitrogen ambient, the hole concentration, carrier mobility, and resistivity is 2.38 × 1020 cm-3, 6.88 × 10-4 Ωcm, and 12.7 cm2/Vs, respectively. In other word, under the condition of grows substrates temperature at annealing temperature of 450℃ and annealing time of 1 minute in oxygen ambient, the hole concentration, carrier mobility, and resistivity is 3.07 × 1020 cm-3, 7.31 × 10-4 Ωcm , and 24.1 cm2/Vs, respectively.

目錄
中文摘要 …………………………………………………………... i
英文摘要 …………………………………………………………... ii
目錄 …………………………………………………………... iv
表目錄 …………………………………………………………... vi
圖目錄 …………………………………………………………... vii
第一章 序論…………………………………………………....... 1
1.1 前言…………………………………………………....... 1
1.2 研究動機………………………………………………... 1
第二章 基本理論………………………………………………... 3
2.1 MOCVD原理…………………………………………... 3
2.2 MOCVD系統…………………………………………… 3
2.3 氧化鋅(ZnO)特性…………………………………….... 4
2.4 砷化鎵(GaAs)特性……………………………………... 6
2.5 電漿(Plasma)……………………………………………. 6
2.6 p-type 摻雜(Doping).…….…………………………….. 6
2.7 快速熱退火製程(Rapid thermal Annealing；RTA) ……. 7
2.8 擴散機制(Diffusion Mechanisms) ……………………... 7
2.8.1 空位擴散(Vacancy Diffusion) …………………………. 8
2.8.2 格隙擴散(Interstitial Diffusion) ………………………... 9
2.9 實驗流程………………………………………………... 10
2.10 實驗前置準備…………………………………………... 10
2.10.1 有機金屬來源…………………………………………... 10
2.10.2 試片準備………………………………………………... 10
2.10.3 成長氧化鋅薄膜環境…………………………………... 10
2.11 實驗分析………………………………………………... 11
2.11.1 霍爾效應與量測原理…………………………………... 11
2.11.2 掃描式電子顯微鏡……………………………………... 13
2.11.3 光激發光量測系統(PL) ………………………………... 14
第三章 研究內容與實驗流程…………………………………... 15
3.1 調變PEMOCVD成長ZnO環境…………………….... 17
3.1.1 富鋅條件下成長ZnO……………………....................... 17
3.1.2 富氧條件下成長ZnO……………………....................... 18
3.2 調變RTA保護氣體的氣氛環境……………………...... 19
3.2.1 氮氣為RTA保護氣體氣氛……………………………. 19
3.2.2 氧氣為RTA保護氣體氣氛……………………………. 19
第四章 結果分析...……………….……………………………... 20
4.1 富鋅條件下成長ZnO………...………………………… 20
4.1.1 成長基板溫度為160℃………………………………..... 20
4.1.2 成長基板溫度為185℃……………………………......... 21
4.1.3 成長基板溫度為190℃……………………………......... 23
4.2 富氧條件下成長ZnO………...………………………… 24
4.2.1 成長基板溫度為160℃………………………………..... 24
4.2.2 成長基板溫度為185℃……………………………......... 26
4.2.3 成長基板溫度為190℃……………………………......... 27
4.3 RTA保護氣體的氣氛環境…………………………....... 36
4.3.1 氮氣…………………………………………………....... 36
4.3.2 氧氣…………………………………………………....... 37
4.3.2.1 成長基板溫度為160℃………………………………..... 37
4.3.2.2 成長基板溫度為185℃……………………………......... 39
4.3.2.3 成長基板溫度為190℃……………………………......... 41
4.4 p-type ZnO薄膜活期…………………………………… 44
第五章 結論……………………………………………………... 45
參考文獻 …………………………………………………………... 46
英文論文大綱 …………………………………………………………... 48
簡歷 …………………………………………………………... 51

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