臺灣博碩士論文加值系統

本論文以霧化學氣相沉積法在c平面的藍寶石(c-sapphire)基板和n型矽(n-Si)基板上沉積氧化鋅摻鉍之薄膜，探討鉍摻雜對於沉積在不同基板的氧化鋅摻鉍之薄膜的結構、電性、光性與其穩定性。在c-sapphire沉積摻鉍比例[Bi]/[Zn]=3 at.%之薄膜為P型氧化鋅摻鉍薄膜，其載子濃度為2.8×1017cm-3；在n-Si沉積摻鉍比例[Bi]/[Zn]=0.5 at.%之薄膜為P型氧化鋅摻鉍薄膜，其載子濃度為1.3×1017 cm-3。隨著摻雜鉍的比例增加，薄膜表面形貌和薄膜性質皆有所改變。接著以共摻的方式在不同基板沉積銦鉍共摻之氧化鋅薄膜，增加薄膜的載子濃度和穩定度，並討論不同基板和不同摻銦比例對薄膜的影響。

In this thesis, we deposit the bismuth-doped zinc oxide thin film on c-sapphire substrates and n-Si substrates by mist chemical vapor deposition. The bismuth doping on the structural, electrical, optical and stability properties in thin films with different substrates were investigated. The p-type bismuth-doped ZnO with [Bi]/[Zn]=3 at.%, the carrier concentration of 2.8×1017cm-3 can be achieved on c-sapphire substrate. And the p-type bismuth-doped ZnO with [Bi]/[Zn]=0.5 at.%, the carrier concentration of 1.3×1017cm-3 can be achieved on n-Si substrate. With the doping ratio increases by increasing the bismuth concentration enhancement, film morphology and film quality varies. In the study of hole concentration, the In,Bi co-doping technique was used. Different substrates and the doping ratios of indium were applied for thin films study.

口試委員會審定書 i
致謝 ii
中文摘要 iii
英文摘要 iv
目錄 v
表目錄 viii
第一章 緒論 1
1.1 前言 1
1.2 研究動機 1
第二章 基礎理論與文獻回顧 2
2.1 氧化鋅薄膜材料背景 2
2.1.1 氧化鋅結構及性質 2
2.1.2 氧化鋅薄膜導電性質 3
2.1.3 氧化鋅摻雜V族元素的導電性質 4
2.2 超音波噴霧熱解法 6
2.2.1 超音波霧化原理 6
2.2.2 噴霧裂解法原理 6
2.3 薄膜沉積原理 8
第三章 實驗方法與量測儀器 13
3.1 實驗藥品與儀器 13
3.1.1 實驗藥品 13
3.1.2 實驗設備與儀器 14
3.3 量測方法與特性分析 17
3.3.1 掃描式電子顯微鏡(Scanning Electron Microscope) 17
3.3.2 X射線繞射分析儀(X-ray Diffractometer) 17
3.3.3 霍爾測量(Hall Measurement) 18
3.3.4 活化能分析 (Activation Energy) 20
3.3.5 光激發螢光分析(Photoluminescence) 21
第四章 實驗結果與討論 25
4.1 摻鉍比例對氧化鋅摻鉍之薄膜性質的影響(on c-Sap.) 25
4.1.1 薄膜表面形貌與結晶性質 25
4.1.2 薄膜的電學性質 26
4.1.3 薄膜的光學性質 28
4.2 摻鉍之氧化鋅薄膜放置2個月後的穩定性(on c-Sap.) 29
4.2.1 薄膜的電學性質 29
4.2.2 薄膜的光學性質 30
4.3 摻銦比例對銦鉍共摻之氧化鋅薄膜性質的影響(on c-Sap.) 32
4.3.1 薄膜表面形貌與結晶性質 32
4.3.2 薄膜的電學性質 33
4.3.3 薄膜的光學性質 34
4.4 銦鉍共摻之氧化鋅薄膜放置2個月後的穩定性(on c-Sap.) 35
4.4.1 薄膜的電學性質 35
4.4.2 薄膜的光學性質 36
4.5 摻鉍比例對氧化鋅摻鉍之薄膜性質的影響(on n-Si) 37
4.5.1 薄膜表面形貌與結晶性質 37
4.5.2 薄膜的電學性質 38
4.5.2 薄膜的光學性質 39
4.6 摻鉍之氧化鋅薄膜放置2個月後的穩定性(on n-Si) 40
4.6.1 薄膜的電學性質 40
4.6.2 薄膜的光學性質 41
4.7.1 薄膜表面形貌與結晶性質 42
4.7.2 薄膜的電學性質 43
4.7.3 薄膜的光學性質 44
4.8 銦鉍共摻之氧化鋅薄膜放置2個月後的穩定性(on n-Si) 45
4.8.1 薄膜的電學性質 45
4.8.2 薄膜的光學性質 46
第五章 結論與未來工作 82
參考文獻 84

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