臺灣博碩士論文加值系統

溶液製程的金屬氧化物薄膜電晶體(IGZO,IZO,ZnO等)是最近研究的重點，尤於其能隙大穿透率高，並且有高的載子遷移率，製程成本是非常低廉等優點。然而，其過高的製程敏感性和元件操作穩定性及需要在高溫中退火限制了其在徹底商業化，近年來研究顯示透過調高In(銦)比例，可讓金屬氧化物於低溫製成時，擁有高的環境穩定性，以及透過DUV退火能大大降低製程溫度。
本論文從一開始如何做出一個金屬氧化物電晶體開始講起，並且為了要改善元件的電性，嘗試了不同的金屬氧化物(IGZO , IZO , ZnO)，且改變不同金屬前驅物混合的比例，以及不同Zn前趨物，以求達到一個極佳化的電性。為了能使整個製程控制在較低的溫度，我們也對上述不同的金屬氧化物進行使用DUV機照射並使用不同的後退火溫度測試並製成了薄膜電晶體並進行電性比較，發現還是IGZO薄膜電晶體在DUV環境下擁有較好的效應並得到較好的電性。
我們使用IGZO，並應用DUV(254nm)照射兩小時，加上300˚C 後退火得到最佳的遷移率～1 cm2V-1s-1，遠高於只有300˚C退火的遷移率 ～0.2 cm2V-1s-1，得到UV退火能有效改善電性。

Solution-processed indium-gallium-zinc-oxide TFTs had been studied for recent years. The most attractive is the low cost fabrication processes, high charge carrier mobility and high optical transparency. However, the performance on solution processed metal-oxide TFTs is not stable, it need high annealing temperature (>400℃) to achieve high performance device characteristics. Recently, some research show that we can decrease the annealing temperature to obtain high performance solution processed metal-oxide TFTs with high ratio In IGZO. And we can also increase excellent environmental stability and high mobility with DUV annealing.
In this study, we fabricated the conventional thin-film transistor with different composition metal-oxide semiconductors such as ZnO, IZO, and IGZO and different Zn precursor to achieve high mobility. In order to decrease annealing temperature , we try to use DUV annealing and post-thermal annealing .We found that IGZO have high performance with DUV annealing and post-thermal annealing.
The IGZO TFT with UV annealing and post-thermal annealing (300˚C) have mobility ～1 cm2V-1s-1 , but IGZO TFTwith thermal annealing (300˚C) have mobility ～0.2 cm2V-1s-1.

中文摘要...........................I
ABSTRACT.........................II
誌謝..............................IV
目錄..............................VI
圖目錄............................IX
表目錄............................XII
一.介紹............................1
1-1 概觀金屬氧化物薄膜電晶體...........1
1-3 金屬氧化物的退火溫度..............2
1-4 金屬氧化物的退火方式..............2
1-5 銦鎵鋅氧薄膜構成機制..............2
1-6 研究動機........................3
1-7 論文概要........................3
二.實驗步驟.........................6
2-1 實驗過程........................6
2-1.1樣品準備(基板)..................6
2-2 製作金屬氧化物溶液................7
2-2.1 ZnO 前趨物....................8
2-2.2 IZO 前趨物....................8
2-2.3 IGZO 前趨物 ...................8
2-3 電晶體運行機制和參數...............8
2-3.1 運行機制.......................8
2-3.2 線性區域.......................9
2-3.3 飽和區域.......................9
2-3.4 載子遷移率............ ........9
2-3.5 Ion/Ioff電流開關比.............10
2-3.6 次臨界擺幅(S.S)................10
2-4 實驗儀器.........................10
2-4.1 自旋塗佈機.....................10
2-4.2 熱蒸鍍機.......................10
2-4.3 四點探針阻抗量測.................11
2-4.4 X射線光電子能譜分析(XPS) analysis.11
三.結果和討論.........................15
3-1 金屬氧化物薄膜電晶體之漏電...........15
3-2 底部閘極之金屬氧化物薄膜電晶體........15
3-3 氧化鋅(ZNO)之特性..................15
3-3.1 低溫退火之ZnO薄膜電晶體...........16
3-3.2 DUV加上低溫熱退火之ZnO薄膜電晶體....16
3-3.3 比較有無DUV退火對ZnO薄膜電晶體之特性影響.16
3-4 銦鋅氧(IZO)薄膜電晶體...............16
3-4.1 低溫退火之IZO薄膜電晶體............17
1.銦比鋅2比1...........................17
2.銦比鋅6.8比2.2.......................17
3-4.2 DUV加上低溫熱退火之IZO薄膜電晶體.....17
1.銦比鋅2比1...........................17
2.銦比鋅6.8比2.2.......................17
3-4.3 比較有無DUV退火對IZO薄膜電晶體之影響..18
3-5 銦鎵鋅氧(IGZO)之特性................18
3-5.1 高溫退火之IGZO薄膜電晶體............18
1.銦鎵鋅4:1:2..........................18
2.銦鎵鋅6.8:1:2.2 ......................18
3-5.2 低溫退火之IGZO薄膜電晶體............19
1.銦鎵鋅4:1:2..........................19
2.銦鎵鋅6.8:1:2.2 ......................19
3-5.3 DUV加上低溫熱退火之IGZO薄膜電晶體....19
1.銦鎵鋅4:1:2..........................19
2.銦鎵鋅6.8:1:2.2 ......................19
3-5.4 比較有無DUV退火對IGZO薄膜電晶體之影響.20
3-6 不同鋅前趨物之IGZO薄膜電晶體...........20
3-7 金屬氧化薄膜電晶體總結.................20
3-8 X射線光電子能譜(XPS)分析..............21
四.結論與未來展望........................43
4-1 結論...............................43
4-2 未來展望............................43
REFERENCE.............................44

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