臺灣博碩士論文加值系統

在本論文中，我們提出使用一氧化二氮氣體(N2O)電漿氧化的方式，在單晶鋁的表面形成高品質的薄膜。文中分析了不同製程參數： N2O氣體流量、基板溫度、腔體壓力以及RF power對氧化速率之影響，並藉由歐傑電子能譜儀(Auger electron spectroscopy, AES)，原子力顯微鏡(Atomic force microscope, AFM)及穿透式電子顯微鏡(Transmission electron microscopy, TEM)分析確認薄膜品質，最後整理出氧化層厚度與氧化時間之間的關係，和熱氧化的模型進行對照。論文中也將氧化鋁薄膜應用於砷化鎵(GaAs)金屬氧化物半導體場效電晶體(MOSFET)中之閘極氧化層，測量元件電性及藉由X射線光電子能譜儀(X-ray photoelectron spectroscopy, XPS)分析氧化層和導電層介面品質。我們的研究順利在單晶鋁上成長出具備高平坦度及介面品質之氧化鋁的薄膜，並嘗試將其應用於實際的電子元件中，希望未來的後續研究能使這項技術更加完善。

In this thesis¸ the plasma oxidation on single-crystalline Aluminum is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with Auger Electron Spectroscopy (AES) , Transmission Electron Microscope (TEM) and Atomic Force Microscope (AFM). The dependence of oxide thickness and oxidation time is plotted, and also compared to the mathematic model in thermal oxidation.
In this thesis, the Al2O3 is applied to gate oxide in GaAs MOSFET. The I-V characteristic of MOSFET is studied, and the interface quality is checked by X-ray Photoelectron Spectroscopy (XPS).
Our work provides another way to prepare a smooth nano-scale Al2O3 film on aluminum, and we are hoping that this fabrication process of plasma oxidation will be improved in future.

目錄
摘要 i
Abstract ii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 前言 p.1
1.1 研究背景及動機 p.1
1.2 論文架構 p.2
第二章 基礎理論與文獻回顧 p.3
2.1 熱氧化之文獻回顧 p.3
2.2 電漿氧化 p.4
2.2.1 電漿定義 p.4
2.2.2 電漿氧化技術 p.5
2.3 量測系統及原理 p.5
2.3.1 歐傑電子能譜儀 p.6
2.3.2 X射線光電子能譜儀 p.8
第三章 氧化鋁薄膜製程及量測 p.9
3.1 單晶鋁基板特性分析 p.9
3.2 電漿氧化製程 p.13
3.3 氧化鋁薄膜特性分析 p.14
3.3.1 AES縱深分析 p.14
3.3.2 TEM影像分析 p.16
3.3.3 AFM表面粗糙度分析 p.19
3.4 氧化時間對氧化層厚度之關係 p.20
3.5 結果整理與比較 p.21
第四章 氧化鋁薄膜應用為閘極氧化層 p.22
4.1文獻回顧 p.22
4.2 元件製程 p.22
4.2.1 樣品結構及光罩設計 p.22
4.2.2 閘極氧化層製作 p.25
4.2.3 平台隔離 p.25
4.2.4 歐姆接觸 p.27
4.2.5 閘極製程 p.28
4.2.1 元件完成圖 p.29
4.3 結果與討論 p.30
4.3.1 改變電漿氧化時間對元件電性之影響p.30
4.3.2 XPS表面元素分析 p.34
4.3.3其餘製程條件整理及討論 p.38
第五章 結論與展望 p.42
參考資料 p.44
簡歷 p.47

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