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[1] A.D.L. Chandani, T. Hagiwara, Y. Suzuki, Y. Ouchi, H. Takezoe, A. Fukuda. Jpn. J. appl. Phys., 27, L126 (1988). [2] V. Faye, C. Rouillon, C. Destrade, H.T. Nguyen. Liq. Cryst., 19, 47 (1995). [3] C.D. Cruz, J.C. Rouillon, J.P. Marcerou, N. Isaert, H.T. Nguyen. Liq. Cryst., 28, 125 (2001). [4] C.D. Cruz, J.C. Rouillon, J.P. Marcerou, N. Isaert, H.T. Nguyen. Liq. Cryst., 28, 1185 (2001). [5] S. Essid, M. Manai, A. Gharbi, J.P. Marcerou, J.C. Rouillon, H.T. Nguyen. Liq. Cryst., 31, 1185 (2004). [6] C.J. Booth, D.A. Dunmur, J.W. Goodby, J.S. Kang, K.J. Toyne. J. mater. Chem., 4, 747 (1994). [7] C.C. Dong, M. Hird, J.W. Goodby. Ferroelectrics, 180, 245 (1996). [8] C.S. Hsu, C.H. Tsai. Liq. Cryst., 22, 669 (1997). [9] S.L. Wu, C.Y. Lin. Liq. Cryst., 30, 471 (2003). [10] D. Coates. Liq. Cryst., 2, 423 (1987). [11] J.P. LePesant, J.N. Perbert, B. Mouret, M. Hareng, G. Decobert, J.C.Dubois.Mol.Cryst. liq. Cryst., 129, 61 (1985). [12] S.M. Kelely. Liq. Cryst., 2, 423 (1989). [13] K. Miyasato, S. Abe, H. Takezoe, A. Fukuda, T. Kuze. Jpn. J. appl. Phys., 22, L661 (1983). [14] A.D.L. Chandani, T. Hagiwara, Y. Suzuki, Y. Ouchi, H. Takezoe, A. Fukuda. Jpn. J. appl. Phys., 27, L729 (1988). [15] J. Lee, A.D.L. Chandani, K. Itoh, Y. Ouchi, H. Takezoe, A. Fukuda. Jpn. J. appl. Phys., 29, 1122 (1990). [16] S.L. Wu, C.Y. Lin. Liq. Cryst., 30, 471 (2003). [17] K. Miyasato, S. Abe, H. Takezoe, A. Fukuda, E. Kuze. Jpn. J. appl. Phys., 22, L661 (1983). [18] M. Cepic, G. Heppke, J.M. Hollidt, D. Lotzsch, B. Beks. Ferroelectrics, 147, 179 (1994). [19] S.L. Wu, C.Y. Lin. Liq. Cryst., 30, 205 (2003). [20] S.L. Wu, W.J. Hsieh. U.S. Patent 2 004 262 573 (2004). [21] B. Kosata, J. Svoboda, V. Novotna, M. Glogarova. Liq. Cryst., 31, 1367 (2004). [22] J.W. Goodby, P. Styring, C. Loubser, P.L. Wessels. UK Patent 19 941 214 (1994). [23] C. Loubser, P.L. Wessels, P. Styring, J.W. Goodby. J. mater. Chem., 4, 71 (1994). [24] M. Wand, R.R. Vohra, D. Walba. PCT Int. 19 920 206 (1992).
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