臺灣博碩士論文加值系統

本研究使用方便但有效率的水熱法合成全無機鈣鈦礦量子點，並成功摻入可視為光學共振腔之平面型膽固醇液晶，發展出高效率全無機鈣鈦礦量子點摻雜膽固醇液晶雷射器。為確認鈣鈦礦量子點基本材料特性，我們使用HRTEM, EDS, XRD等量測儀器來檢測合成出的量子點材料之尺寸大小、元素組成和晶格結構，最終確認所合成之鈣鈦礦量子點符合CsSnI3鈣鈦礦之黑色斜方晶相。將鈦鈣鈦礦量子點摻入膽固醇液晶製作出鈣鈦礦量子點摻雜膽固醇液晶雷射樣品，並測量雷射輸出偏振性、半高寬和量子點團聚的表面型態，可得到ge值達約1.8、半高寬窄至0.2 nm之雷射輸出，並確認量子點在膽固醇液晶中團聚現象會降低雷射效能。第二部份為改變膽固醇液晶中手性分子摻雜濃度，藉以改變光子能隙邊緣位置來調控雷測輸出波長，結果發現吸收與螢光兩條件之抗衡會影響雷射閥值。本實驗中最低之雷射閥值可達約1.86 µJ/pluse，此值與上述雷射特性(半高寬與ge值)與傳統染料摻雜膽固醇液晶雷射之特性已可相比擬。最後部分乃藉由外加場(溫度及交流與直流電壓)來調變CLC反射波段位置藉以達成鈣鈦礦量子點液晶雷射之多方式可調控性能。此研究中首次發展的全無機鈣鈦礦量子點摻雜膽固醇液晶雷射有潛力應用於未來新穎的光子學應用上，特別是在創新的可調控式光發射元件方面。

This work demonstrated for the first time an highly efficient all-inorganic perovskite quantum dots doped CLC (AIPQD-CLC) laser. The AIPQD material as an efficient optical gain medium in the optical resonator of the CLC planar texture can be obtained by pre-underdoing a low-cost solvothermal process.. Experimental results show that the AIPQD lattice structure corresponds to the black orthorhombic phase of CsSnI3 perovskite. The ge value and linewidth of the lasing signal from the AIPQD-CLC laser measured are around 1.8 and 0.21 nm, respectively. The aggregation of the AIPQDs in the CLC may significantly decrease the lasing performance. In second part, the position of the bandedge can be changed by changing the composition ratio of the chiral and LC such that the lasing wavelength of the AIPQD-CLC laser can be tuned. Experimental results show that both the absorption and photoluminescence (PL) of the QDs may competitively influence the lasing threshold. Additionally, the energy threshold of the AIPQD-CLC laser can be as low as 1.86 μJ/pulse. Including the lasing threshold, ge value and linewidth, the performances of the AIPQD-CLC laser are nearly comparable with those based on traditional dye-doped CLC lasers. In third part, the thermal, AC and DC electrical tuning features of the AIPQD-CLC laser were demonstarted. The AIPQD-CLC laser exhibited a high potential to become a new class of candidates for photonic applications, particularly in multi-tunable light-emitting devices.

目錄 XII
圖目錄 XIV
表目錄 XVIII
第1章 緒論 1
第2章 液晶簡介 4
2-1液晶歷史與簡介 4
2-2液晶種類 5
2-2-1溶致型液晶 5
2-2-2熱致型液晶 6
2-3液晶物理特性 10
2-3-1折射率各向異性 11
2-3-2溫度的影響 12
2-3-3介電各向異性 13
2-3-4彈性連續體形變理論 15
2-4膽固醇液晶光學特性 17
2-4-1電磁波傳播於液晶中波方程之推導 17
2-4-2膽固醇液晶色散關係式 20
2-4-3膽固醇液晶光學特性 22
2-5膽固醇液晶螺距受調控之外在因素 23
2-5-1溫度 23
2-5-2摻雜濃度 24
2-5-3外加電場與磁場 25
第3章 研究相關理論 27
3-1雷射基本機制 27
3-1-1光子與粒子的交互作用 27
3-1-2居量反轉 28
3-1-3產生雷射的基本條件 29
3-2膽固醇液晶雷射 30
3-2-1 分佈式回饋雷射 30
3-2-2 膽固醇液晶雷射 31
3-3鈣鈦礦材料 33
3-3-1鈣鈦礦材料簡介 33
3-3-2鈣鈦礦材料發光二極體機制 35
3-3-3鈣鈦礦雷射 37
第4章 元件製作和實驗架設 38
4-1實驗材料簡介 38
4-2元件製作 40
4-2-1樣品玻璃的清洗 40
4-2-2 空樣品製作 40
4-2-3 鈣鈦礦量子點製備 40
4-2-4 鈣鈦礦量子點液晶雷射樣品製作 42
4-3 實驗架設 43
4-3-1平板樣品表面顯微型態與反射光譜觀察 43
4-3-2光致發光量測架設 44
4-3-3鈣鈦礦量子點摻雜膽固醇液晶雷射激發量測架設 45
第5章 結果與討論 47
5-1 CsSnI3全無機鈣鈦礦量子點液晶雷射 47
5-1-1 CsSnI3全無機鈣鈦礦量子點之基本特性 47
5-1-2 CsSnI3全無機鈣鈦礦量子點液晶雷射(AIPQD-CLC) 52
5-2 CsSnI3鈣鈦礦量子點摻雜膽固醇液晶雷射於不同光子能隙之影響 57
5-3鈣鈦礦量子點液晶雷射之溫度與電壓調控性能 65
第六章 結論與未來展望 74
6-1結論 74
6-2未來展望 75
References 76

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