臺灣博碩士論文加值系統

本研究分成兩個部分，第一部分研究爐管退火與快速熱退火溫度對砷化鎵基板上砷摻雜氧化鋅薄膜材料結構與光學特性的影響。研究結果顯示進行兩種退火機制(爐管退火與快速熱退火)的樣品有較好的薄膜品質，可降低薄膜殘餘應力，且電性皆呈現p型，快速熱退火溫度600 oC的樣品因容易形成AsZn-2VZn複合物等缺陷，雖載子濃度高達1019 cm-3，薄膜結構卻較差導致光學性質降低。爐管500 oC退火與快速熱退火550 oC兩種退火機制有效形成較佳品質的p型氧化鋅薄膜。

第二部分研究長晶時間與不同固態錳成長源加熱溫度對碲化錳鎘薄膜的影響，研究結果顯示長晶時間6小時樣品錳摻雜濃度較高，錳摻雜有助於降低碲化鎘薄膜碲-碲鍵結的缺陷，隨著錳成長源加熱溫度上升，薄膜成長結構愈好，橢圓偏振光譜擬合出的粗糙度跟著下降，顯微光激發螢光光譜的放光波長藍移量愈多，其中錳成長源溫度820 oC的碲化錳鎘薄膜放光波長可藍移至629 nm且碲-碲鍵缺陷最少，適合作為中間能隙太陽能電池用來吸收能量大於碲化鎘能隙的光子能量。

This study is divided into two parts. The first part is the study of the effect of furnace annealing and rapid thermal annealing (RTA) temperature on the structure and optical properties of arsenic-doped zinc oxide (ZnO:As) film on GaAs substrates. The results show that the samples with both furnace annealing and rapid thermal annealing have better film quality including reduction of the residual stress of the film and the formation of high p-type conductivity. Although the hole concentration of the sample with RTA 600 oC is as high as 1019 cm-3, the defects such as AsZn-2VZn complex are formed leading to relatively higher roughness and poor optical emission. Furnace annealing 500 oC and rapid thermal annealing 550 oC are superior condition for better quality of p-type ZnO: As thin film.
The second part is the study of the effect of crystal growth time and manganese precursor temperature on the cadmium manganese telluride (Cd1-xMnxTe) film grown on silicon (Si) substrates. The results show that higher doping concentration of manganese (Mn) is achieved in Cd1-xMnxTe for crystal growth time 6-hours. Manganese doping can help to reduce defects of Te-Te bond of the Cd1-xMnxTe film. Better crystalline structure, lower surface roughness and larger blue shifts of luminescence wavelength are realized when the precursor temperature of Mn is raised. For the precursor temperature of Mn at 820 °C, the luminescence wavelength can shift to 629 nm and has relatively low defect density of Te-Te bond. Cd1-xMnxTe is a suitable material as an intermediate energy gap material in the applications of Si-based solar cell.

摘要 i
Abstract ii
致謝 iii
目 次 iv
表目次 vi
圖目次 viii
第一章 緒論 1
1-1 氧化鋅材料簡介 2
1-2 碲化鎘材料簡介 4
1-3 原子層沉積技術 8
1-4 分子束磊晶技術 10
1-5 研究動機 11
第二章 實驗儀器原理 12
2-1 X射線繞射圖譜 12
2-2 顯微光激發螢光光譜 15
2-3 顯微拉曼散射光譜 17
2-4 橢圓偏振光光譜 19
2-5 掃描式電子顯微鏡 24
2-6 原子力顯微鏡 26
第三章 熱退火溫度對砷摻雜氧化鋅薄膜在砷化鎵(100)基板的影響 27
3-1 樣品製備方式與結構 27
3-2 實驗結果與討論 30
3-3 結論 43
第四章 錳成長源溫度對碲化錳鎘薄膜在矽(211)基板的影響 44
4-1 樣品製備方式與結構 44
4-2 長晶時間與摻雜錳元素的影響 45
4-3 錳成長源溫度的影響 53
4-4 結論 63
第五章 總結 64
參考文獻 65

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