臺灣博碩士論文加值系統

本實驗係利用臭氧水處理砷化鋁鎵/砷化銦鎵異質結構形成金屬氧化物半導體閘極結構之場效電晶體，並於氧化層上方濺鍍沉積氧化鉿之製程技術於砷化鋁鎵/砷化銦鎵異質結構場效電晶體，利用氧化層之較高能隙與介電層之高介電常數，一方面能有效抵擋閘極漏電流，二來能提高閘極對通道的控制能力來達成提升電流密度，進而得到大的驅動電流元件特性。
使用傳統(Sample A)、金屬氧化物半導體(Sample B)與二氧化鉿閘極介電層之砷化鋁鎵/砷化銦鎵異質結構場效電晶體(Sample C)之直流和微波特性分別為:最大飽和電流密度ID, max (357.8 mA/mm、387 mA/mm及410.9 mA/mm)，最大轉導值gm,max (177.3 mS/mm、194.1mS/mm及206.8 mS/mm)，電流增益截止頻率fT (16.58 GHz、17.9 GHz及21.13 GHz)、最大震盪頻率fmax (28.05 GHz、31.53 GHz及38.91 GHz)、最小雜訊NFmin 在2.4 GHz分別為 (1.06 dB、0.46 dB及0.36 dB)，必v增益效率P.A.E. 在2.4 GHz分別為 (30.3 %、40.3 %及47.2 %) 。實驗結果顯示，結果顯示使用二氧化鉿閘極介電層結構可有效改善電流密度及輸出?#63841;等優異特性。

The research is mainly investigated on high-k layer with oxide layer for AlGaAs/InGaAs high electron mobility transistors (HEMTs).
In this work, we have an effective method of the ozone water treatment and sputtering Hafnium oxide layer to improve the characteristics of device. The HfO2 dielectric layer is used to enhance the current density, and we can get large drive current characteristics of device. This technology combines advantage of the HfO2 gate dielectric layer and oxide layer, and then compare with the MOS-HEMT and conventional HEMT.
Experiment results indicate the following devices DC and microwave characteristics: the maximum saturation drain current density ID, max (357.8, 387and 410.9 mA/mm), the maximum extrinsic transconductance gm,max (177.3, 194.1 and 206.8 mS/mm), the unity current gain cut-off frequency fT (16.58, 17.9 and 21.1 GHz), the maximum oscillation frequency fmax (28.1, 31.5 and 38.9 GHz), the minimum noise figure NFmin at 2.4 GHz (1.06, 0.46 and 0.36 dB) and the power-added-efficiency P.A.E. at 2.4 GHz (30.3, 40.3 % and 47.2 %).

摘要 I
Abstract II
Table Captions V
Figure Captions VI
Chapter 1 Introduction 1
Chapter 2 Material Growth and Fundamental of pHEMT 4
2.1 Introduction to pHEMT 4
2.2 pHEMT Structure Layer Design 4
2.2.1 Cap Layer 5
2.2.2 Schottky Contact Layer 5
2.2.3 δ-doped Carrier Supply Layer 6
2.2.4 Spacer Layer 7
2.2.5 Pseudomorphic InGaAs Channel Layer 7
2.2.6 Buffer Layer 8
Chapter 3 Device Structures and Fabrication Processes 9
3.1 Device Structures 9
3.2 Device Fabrication Process 10
3.2.1 Sample Orienting 10
3.2.2 Mesa Isolation 11
3.2.3 Source and Drain Metallization 12
3.2.4 Gate Schottky Contact 13
3.2.5 Ozone Water Treatment (For Sample B&C) 14
3.2.6 Sputtering HfO2 (Sample C) 15
Chapter 4 Experimental Results and Discussions 16
4.1 Materials Introduction 16
4.2 Hall Measurement 16
4.3 Atomic Force Microscopy 18
4.4 DC Characteristics at 300K 19
4.4.1 Current-Voltage Characteristics 19
4.4.2 Extrinsic Transconductance Characteristics 20
4.4.3 Two-Terminal Breakdown Voltage Characteristics 21
4.4.4 Output Conductance 21
4.4.5 Capacitance Voltage Characteristics 23
4.5 RF Characteristics 23
4.6 Power Characteristics 25
4.7 Noise Characteristics 27
4.7.1 High Frequency 28
4.7.2 Low frequency Noise Characteristics 29
4.8 Temperature-Dependent Characteristics 30
4.8.1 Current-Voltage Characteristics 31
4.8.2 Extrinsic Transcondutance Characteristics 31
4.8.3 Two-terminal Breakdown Voltage Characteristics 31
Chapter 5 Conclusions 34
References 35

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