|
[1]K. Chen, Z. Yang, L. Hoang, J. Weiland, M. Humayun, and W. Liu, “An integrated 256-channel epiretinal prosthesis,” IEEE J. Solid-State Circuits, vol. 45, no. 9, pp. 1946–1956, Sep. 2010. [2]K.-Y. Lin, M.-D. Ker and C.-Y. Lin “A high-voltage-tolerant stimulator realized in the low-voltage CMOS process for cochlear implant,” in Proc. IEEE Int. Symp. Circuits Syst., May. 2014, pp. 237-240. [3]W.-M. Chen et al., “A fully integrated 8-channel closed-loop neuralprosthetic CMOS SoC for real-time epileptic seizure control,” IEEE J. Solid-State Circuits, vol. 49, no. 1, pp. 232–247, Jan. 2014. [4]J. F. Dickson, “On chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplied technique,” IEEE J. Solid-State Circuits, vol. 1, pp. 374-378, Jun. 1976. [5]J. S. Witters, G. Groeseneken, and H. E. Maes, “Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits,” IEEE J. Solid-State Circuits, vol. 24, pp. 1372-1380, Oct. 1989. [6]J.-T. Wu and K.-L. Chang, “MOS charge pump for low-voltage operation,” IEEE J. Solid-State Circuits, vol. 33, pp. 592–597, Apr. 1998. [7]M.-D. Ker, S.-L. Chen, and C.-S. Tsai, “Design of charge pump circuit with consideration of gate oxide reliability in low-voltage CMOS process,” IEEE J. Solid-State Circuits, vol. 41, pp. 1100–1107, May. 2006. [8]A. Umezawa, S. Atsumi, M. Kuriyama, H. Banba, K. Imamiya, K. Naruke, S. Yamada, E. Obi, M. Oshikiri, T. Suzuki, and S. Tanaka, “A 5-V-only operation 0.6-μm flash EEPROM with row decoder scheme in triple-well structure,” IEEE J. Solid-State Circuits, vol. 27, no. 11, pp. 1540-1546, Nov. 1992. [9]S. Ethier, M. Sawan, E. Aboulhamid, and M. El-Gamal, “A ±9V fully integrated CMOS electrode driver for high-impedance microstimulation,” in Proc. IEEE International Midwest Symposium on Circuits and Systems, pp. 192-195, 2009. [10]Y.-C. Huang, M.-D. Ker, and C.-Y. Lin, “Design of Negative High Voltage Generator for Biphasic Stimulator with SoC Integration Consideration”, in Proc. IEEE Biomedical Circuits and Systems Conf., 2012. [11]J.-Y. Lee, S.-E. Kim, S.-J. Song, J.-K. Kim, S. Kim, and H.-J. Yoo, “A regulated charge pump with small ripple voltage and fast start-up,” IEEE J. Solid-State Circuits, vol. 41, no. 2, pp. 425–432, Feb. 2006. [12]L. Aaltonen and K. Halonen, “On-chip charge-pump with continuous frequency regulation for precision high-voltage generation,” in Proc. IEEE Prime’09, pp. 68–71, Jul. 2009. [13]J.-M. Baek, D.-J. Seo, J.-H. Chun, and K.-W. Kwon, “A dual charge pump for quiescent touch sensor power supply,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 59, no. 11, pp. 780–784, Nov. 2012. [14]Y-H. Weng, H.-W. Tsai, and M.-D. Ker, "Design of charge pump circuit in low-voltage CMOS process with suppressed return-back leakage current," in Proc. IEEE Int. Conf. on Integr. Circuit Design Technol., 2010, pp. 155-158. [15]H. Banba, H. Shiga, A. Umezawa, T. Miyaba, T. Tanzawa, S. Atsumi, and K. Sakui, “A CMOS bandgap reference circuit with sub-1-V operation,” IEEE J. Solid-State Circuits, vol. 34, pp. 670-674, May 1999. [16]H.-J. Oguey and D. Aebischer, “CMOS current reference without resistance,” IEEE J. Solid-State Circuits, vol. 32, No. 7, pp. 1132-1135, Jul. 1997. [17]E. Recape and J-M. Dage, “A PMOS-switch based charge pump, allowing lost cost implementation on a CMOS standard process,” in Proc. ESSCIRC, 2005, pp. 77-80. [18]C. Lauterbach, W. Weber, and D. Romer, “Charge sharing concept and new clocking scheme for power efficiency and electromagnetic emission improvement of boosted charge pumps,” IEEE J. Solid-State Circuits, vol. 35, no. 5, pp. 719–723, May 2000. [19]H.-W. Hwang; J.-H. Chun, and K.-W. Kwon, “A low power cross-coupled charge pump with charge recycling scheme,” in Proc. IEEE Int. Conf. Signals, Circuits Syst., 2009, pp.1-5. [20]J. Cha et al., “A low-power CMOS antenna-switch driver using shared-charge recycling charge pump,” IEEE Trans. Microw. Theory Techn., vol. 58, no. 12, pp. 3626–3633, Dec. 2010. [21]H. Zhu, M. Huang, Y. Zhang, T. Yoshihara, “A 4-phase cross-coupled charge pump with charge sharing clock scheme,” in Proc. IEEE Int. Conf. Electron. Devices, Syst. Appl., Apr. 2011, pp.73-76.
|