臺灣博碩士論文加值系統

本論文主要分成兩個部分，第一部分利用砷化鎵蕭特基二極體內含量子點成長於量子井(Dot-in-well)結構的調頻電性量測，從而推測並建構等效RC電路模型，試圖解釋與說明調頻電性量測之特殊現象。在確認等效RC電路模型之結構後，進行導納之運算， 推導出電容與電導對於頻率之關係式，並解出蕭特基電容、量子點電容等參數值，最後進行C-f與G/f-f圖之模擬。第二部分討論在變偏壓下蕭特基電容、量子點電容與電阻之情形，並利用理論計算之方式，計算出零偏壓下量子點電容與位障高度，並與等效RC電路模型之結果進行比對與討論。本論文利用空乏區尚未跨過量子層之調頻電性量測，推導出量子點電容與電阻，並使用理論計算與模擬之方式，以佐證等效RC電路模型之正確性。

There are two cases in this study. In the first case, we discuss frequency-modulated electrical properties of InAs/InGaAs dot-in-well layer embedded in a GaAs Schottky diode, and build the equivalent RC circuit model to explain this appearance. After we check the equivalent RC circuit model, we express the capacitance and conductance to frequency, and work out the capacitance of Schottky and QD, and finally simulate the C-f and G/f-f plots. In the second case, we discuss the capacitance of Schottky, capacitance of QD and resistance of QD in the different bias, and use the theoretical arithmetic to calculate the capacitance and barrier height of QD under zero bias. Then we compare the results of theoretical arithmetic with equivalent RC circuit model. To sum up, we use frequency-modulated electrical measurement for QD layer, which is located outside the depletion region, and then demonstrate the capacitance and resistance of QD with equivalent RC circuit model and theoretical arithmetic. As a result, we confirm the equivalent RC circuit model is correct.

摘　要 i
Abstract ii
誌 謝 iii
目 錄 v
圖 表 目 錄 vi
第一章 緒論 1
1-1 量子點材料簡介 1
1-2 研究動機 2
1-3 論文架構 2
第二章 實驗樣品製備與量測系統簡介 4
2-1 InAs/GaAs 量子點磊晶樣品之製備 4
2-2 蕭基接面及歐姆接面之電極製作 5
2-3 量測系統簡介 6
2-3-1 電容電壓量測 (Capacitance – voltage measurement, CV) 6
2-3-2 導納頻譜量測 (C-f & G-f) 7
第三章 高頻率電容下降機制 10
3-1 高頻電容下降機制之等效RC電路 10
3-1-1 建立等效RC電路模型 10
3-1-2 變頻電容變化分析 10
3-1-3 等效電路參數值計算 12
3-2 頻率響應點之比較(C & G) 13
3-3 導納頻譜模擬 14
第四章 變偏壓下等效電路之分析 21
4-1 變偏壓導納頻譜模擬 21
4-2 理論計算與等效RC電路模型之比較 21
4-2-1 蕭特基電容大小理論計算 21
4-2-2 量子點電容大小理論計算 22
4-2-3 量子點位障高度理論計算 23
第五章 結論 31
參考文獻 32

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