臺灣博碩士論文加值系統

本論文旨以噴灑法沉積摻銀奈米粒之奈米碳管複合薄膜在金屬電極上製作高電流密度奈米碳管場發射電子源基板，並結合有機發光二極體(Organic Light Emitting Diodes, OLEDs），形成場發射式有機發光二極體(Field Emission Organic Light Emitting Diodes, FEOLEDs)，有效提高OLED發光效率。
對於奈米碳管場發射電子源基板特性的研究，主要著重於場發射特性的改善。利用蒸鍍法製作金屬電極作為陰極，使用噴灑法沉積奈米碳管(CNTs)於陰極上，而在CNTs中摻入銀奈米粒，能提升CNTs薄膜整體的導電性，進一步提升場發射特性。金屬電極分別採用銅、銀與鋁三種材料，結果顯示銅金屬電極以及銀奈米粒6.6 wt% 有較佳的場發射特性，電場在1.78 V/µm時有最高電流密度62.5 mA/cm2。 將上述場發射電子源基板應用於FEOLEDs元件中，有效的提升OLED發光亮度從5857 cd/m2至7386 cd/m2，發光效率也從9.327 cd/A提升至11.76 cd/A。

In this study, we deposit Ag nanoparticles (Ag NPs)-doped carbon nanotube (CNT) suspension on metal by spray technique to produce a high current density carbon nanotube field emission electron source substrate. Field emission organic light-emitting diodes (FEOLEDs) are fabricated by combining the CNT field emission electron source with organic light-emitting diodes (OLEDs), which demonstrate a higher luminous efficiency than OLEDs.
The study of a CNT field emission electron source substrate is to enhance the field emission characteristics. First, Cu, Ag or Al is evaporated on the glass substrate to form the cathode. Ag NPs-doped multi-walled carbon nanotubes (MWCNTs) are deposited onto cathodes by spray technique. Doping Ag NPs into CNTs can improve the conductivity of CNTs film to further enhance the field emission properties. Experimental results reveal that a current density of 62.5 mA/cm2 at 1.78 V/μm has been obtained when Cu is used as a cathode and 6.6 wt% Ag NPs is doped into CNTs. When the above electron emitting source used as a substrate combines an OLED device to form a FEOLED, the luminance intensity is enhanced from 5857 cd/m2 to 7386 cd/m2 and the luminous efficiency is enhanced from 9.327 cd/A to 11.76 cd/A.

目錄
中文摘要 I
ABSTRACT II
致謝 III
目錄 IV
表目錄 VI
圖目錄 VII
第一章 導論 1
1-1場發射顯示器 1
1-2有機電激發光顯示器 3
第二章 文獻回顧與研究動機 6
2-1有機發光二極體文獻回顧 6
2-1-1 有機發光二極體基本結構 7
2-1-2 有機發光二極體發光機制 7
2-2 奈米碳管文獻回顧 8
2-2-1 奈米碳管結構與合成方法 9
2-2-2 奈米碳管之應用 10
2-2-3 奈米碳管應用於場發射 12
2-2-4 場發射理論與Fowler-Nordheim方程式 13
2-2-5 Fowler-Nordheim方程式應用與奈米碳管場發射量測 14
2-2-6 奈米碳管場發射基板製作方法 16
2-2-7 奈米碳管附著劑材料介紹 17
2-2-8 奈米碳管場發射基板材料選擇 17
2-3 場發射式有機發光二極體概述 18
2-4 研究動機 18
第三章 實驗方法與設備 32
3-1奈米碳管混合液分析 32
3-2實驗流程 32
3-3 基板清洗方法 34
3-4 以噴灑法製作奈米碳管場發射基板 34
3-5 有機發光二極體元件製作 35
3-6場發射式有機發光二極體元件製作 36
3-7 實驗器材設備 36
第四章 結果與討論 45
4-1 奈米碳管場發射特性分析 45
4-1-1不同附著劑對場發射特性的影響 45
4-1-2不同質量CNTs對場發射特性的影響 46
4-1-3不同金屬電極對場發射特性的影響 46
4-1-4不同濃度銀奈米粒對場發射特性的影響 47
4-1-5玻璃基板與塑膠軟板的場發射特性比較 48
4-2場發射式有機發光二極體(FEOLEDs)-光電特性 48
第五章 結論與展望 61
5-1結論 61
5-2展望 62
參考文獻 63

表目錄
表2-1奈米碳管原子排列之結構及質 19
表2-2三種奈米碳管成長方式的比較 20
表2-3單壁奈米碳管主要的物理性 21
表2-4各類場發射材料電場比較表 22
表2-5 β值數據比較 23
表4-1各材料熱處理前後之片電阻 50

圖目錄
圖1-1 場發射元件結構圖(a)二極式結構圖; (b)三極式結構圖 5
圖1-2 三星於1999年發表成功封裝4.5吋三色FED 5
圖2-1 柯達公司首創採用異質接面雙層結構之有機發光二極體 24
圖2-2 OLED基本結構 24
圖2-3 有機發光二極體分子能階示意圖 25
圖2-4 各種形式的富勒烯 25
圖2-5 碳的四種結構 26
圖2-6 (a)Iijima拍攝的HRTEM圖 (b)多壁奈米碳管(MWCNT) (c)單壁奈米碳管(SWCNT) 26
圖2-7 奈米碳管結構向量示意圖 27
圖2-8 單壁奈米碳管的三種結構：(a)armchair；(b)zipzag；(c)chiral 27
圖2-9 化學氣相沉積法設備示意圖 28
圖2-10 電弧放電法設備示意圖 28
圖2-11 雷射剝鍍製程示意圖 29
圖2-12 電弧放電法製備奈米碳管場發射陰極材料之發光元件 29
圖2-13 奈米碳管製作照明燈 30
圖2-14 金屬與真空系統場發射示意圖 30
圖2-15 奈米碳管場發射示意圖 31
圖3-1 奈米碳管場發射電子源製作流程圖 39
圖3-2 FEOLED元件製作流程圖 39
圖3-3 噴灑法製作奈米碳管場發射基板示意圖 40
圖3-4 場發射式有機發光二極體結構示意圖 40
圖3-5超音波震盪器 41
圖3-6實驗型蒸鍍系統儀器 41
圖3-7場發射真空電性量測設備 42
圖3-8單區段外部加熱式的水平高溫管型爐 42
圖3-9 掃描式電子顯微鏡儀器 43
圖3-10 XRD儀 43
圖3-11四點探針阻值量測儀 44
圖4-1分別是使用PMMA與glass frit作為附著劑的CNTs薄膜SEM橫截面圖 50
圖4-2不同附著劑的CNTs場發射之J-E曲線圖 51
圖4-3 不同質量CNTs場發射之J-E曲線圖 51
圖4-4 (a)、(b)、(c) 分別為不同質量CNTs的橫截面SEM圖 52
圖4-5 三種不同金屬電極的場發射J-E曲線圖 52
圖4-6不同濃度銀奈米粉末的場發射J-E曲線圖 53
圖4-7濃度6.6 wt%的銀奈米粉末的SEM頂視圖與EDS圖 54
圖4-8濃度12.5 wt%的銀奈米粉末的SEM頂視圖與EDS圖 55
圖4-9濃度18 wt%的銀奈米粉末的SEM頂視圖與EDS圖 56
圖4-10摻入銀奈米粉末的CNTs薄膜XRD圖 57
圖4-11玻璃基板與軟性基板的場發射J-E曲線圖 57
圖4-12 FEOLEDs元件結構圖與量測時電源接法 58
圖4-13藍光OLED元件之L-V曲線圖 58
圖4-14藍光OLED元件之J-V曲線圖 59
圖4-15 FEOLEDs之L-J曲線圖 59
圖4-16 FEOLEDs元件之發光效率曲線圖 60

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