臺灣博碩士論文加值系統

本實驗利用電化學陽極化蝕刻法在室溫之下長成多孔矽薄膜，本實驗以調變八種不同電流密度以及調變五種不同時間，並透過掃描式電子顯微鏡、光激發螢光光譜、半導體特性量測…等方法來比較時間、溫度及電流及對於多孔矽能隙及光學特性之影響，並探討其電學特性。
探討八種不同電流密度以及四種不同電壓對於能隙以及孔隙率之影響，在定時20分鐘在電流從1mA調變到20mA之能隙約差0.16eV，而定電流5mA蝕刻時間從5分鐘調變至25分鐘其能隙差約為0.11eV，而蝕刻電流密度越大會導致螢光峰值藍位移，而蝕刻時間越短則會導致螢光峰值產生紅位移，而在溫度對於能隙及發光度的影響，吾人觀察到溫度越高發光度越低，且會使螢光波峰產生紅位移的現象，而溫度在約200K以上活化能為10.6meV此活化能為熱產生之能量，而在200K以下會產生量子穿隧效應；而在電性方面，吾人透過半導體電性量測，測得I-V圖，並觀察出多孔隙本身在負偏壓具有類似蕭特基二極體的曲線，而在正偏壓的情況下I-V則呈現指數上升的情況。

In this study, porous silicon flims are fabricated by electrochemical etching at room temperature. The silicon porosity was controlled by the dependence of current density etching of time. In the dependence of temperature, the energy gap is determined by photoluminescence measurement(PL). The surface morphology is analyzed by Scanning Electron Microscope(SEM) measurement. The electrical properties of porous silicon are measured by semiconductor devices parameter system.
The influence of the different current density and different voltages in the band gap and the porosity are observed by setting 20 minutes etching time in the electric current from 1mA to 20mA. The variation of energy gap is about 0.16eV. The etching time is controlled from 5 minutes to 25 minutes at 5mA constant current. The shift of energy gap is about 0.11eV. Etching current density shows the blue-shift of the optical energy gap. The red-shift of energy gap is due to large porosity of porous silicon at the shorter etching time. The porous silicon energy gap is determined by temperature-dependent photoluminescence measurement(50K-300K).The activation energy of the porous silicon are figured out two characteristic features. The activation energy of below 200K is due to quantum tunneling effect. The activation energy is about 10.6meV at higher than 200K because of the influence of thermal effect.The electrical properties of porous silicon are measured by semiconductor devices parameter system. The result indicate that the porous silicon having the similar to schottky barrier diode in the negative bias. The reverse collapse voltage of -10.9V.

封面內頁
簽名頁
中文摘要．．．．．．．．．．．．．．．．．．．．．．．．iii
英文摘要．．．．．．．．．．．．．．．．．．．．．．．．iv
誌謝．．．．．．．．．．．．．．．．．．．．．．．．．．v
目錄．．．．．．．．．．．．．．．．．．．．．．．．．．vi
圖目錄．．．．．．．．．．．．．．．．．．．．．．．．．viii
表目錄．．．．．．．．．．．．．．．．．．．．．．．．．xi

第一章　緒論
1.1 前言．．．．．．．．．．．．．．．．．．．．1
1.2 研究動機．．．．．．．．．．．．．．．．．．2
第二章　文獻回顧
2.1多孔矽之原理與簡介．．．．．．．．．．．．． 4
2.2多孔矽的表面之溶解機制．．．．．．．．．．． 5
2.3多孔矽的形成原理 ．．．．．．．．．．．．．．10
2.3.1比爾模型．．．．．．．．．．．．．．．．10
2.3.2 擴散限制模型．．．．．．．．．．．．．．11
2.3.3 量子模型．．．．．．．．．．．．．．．．12
2.4 多孔矽之螢光機制．．．．．．．．．．．．．．14
2.4.1 多孔矽的發光機制簡介．．．．．．．．．．14
2.4.2 量子侷限效應．．．．．．．．．．．．．．15
2.5 多孔矽之蝕刻參數．．．．．．．．．．．．．．20
2.5.1 多孔矽的孔隙率．．．．．．．．．．．．．20
2.6 蕭特基二極體．．．．．．．．．．．．．．．．23
第三章　實驗流程與設備
3.1樣品準備與前置處理．．．．．．．．．．．．．24
3.2多孔矽蝕刻製備．．．．．．．．．．．．．．．27
3.3 光激發螢光．．．．．．．．．．．．．．．．．28
3.3.1光激發光螢光光譜原理．．．．．．．．．．28
3.3.2光激發螢光使用儀器與實驗步驟．．．．．．32
3.4 光譜儀．．．．．．．．．．．．．．．．．．．34
3.4.1 光譜儀介紹．．．．．．．．．．．．．．．34
3.4.2量測各種不同之光譜．．．．．．．．．．．35
3.4.3 量測各種不同濾鏡之吸收光譜．．．．．．．37
3.5 掃描式電子顯微鏡．．．．．．．．．．．．．．38
3.6 半導體特性量測儀．．．．．．．．．．．．．．40
第四章　結果討論與數據分析
4.1樣品參數決定．．．．．．．．．．．．．．．．42
4.2多孔矽之掃描式電子顯微鏡．．．．．．．．．．44
4.3 光譜量測．．．．．．．．．．．．．．．．．．53
4.4 電性量測．．．．．．．．．．．．．．．．．．64
第五章　結論
5.1 結論．．．．．．．．．．．．．．．．．．．．66
參考文獻．．．．．．．．．．．．．．．．．．．．．．．．67

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