臺灣博碩士論文加值系統

近年來，有非常多關於相變化記憶體的研究，這些研究涉及記憶體結構、記憶材料…等等；其中，GeSb9擁有高度的結晶速率，所以成為相當有競爭力的相變化材料；然而，GeSb9在結晶相的電阻係數過低，導致其很難實際使用在PCRAM上；我們實驗室的研究著重在藉由摻雜矽的GeSb9，使其在結晶相可以擁有較高的電阻係數而使RESET電流降低。
在我的研究中，藉由使用電性量測系統即可以取得純的GeSb9和摻雜矽的GeSb9的結晶機制的資訊。
實驗結果顯示結晶溫度與結晶活化能會隨著摻雜矽的量提高而上升；其次，在非晶狀態下的半導體導電機制也會改變，在GeSb9是本質性半導體，而在GeSb9-8Si和GeSb9-16Si，則是n型半導體；最後，由恆溫實驗的結果分析，可以得到一旦矽的含量超過一定值，孕核時間與相變化時間會大幅地改變，從而得知此時結晶機制中的控制項由介面反應控制變成擴散控制。

Recently, there is a lot of research about various phase-change materials, because of the ultrafast crystallizing of GeSb9, it becomes one of the emerging candidates; however, the electrical resistance of its crystalline phase is too low to be used practically in PCRAM because of the requirement of too high RESET current, the research in our lab is focused on the Si-doped GeSb9, which has higher electrical resistance in the crystalline phase.
In my experiments, by using the electrical measurement system, the information about the crystallization mechanism of different composition contents of Si-doped GeSb9 could be obtained.
The results show that the crystallization temperature and crystallization activation energy both increase with the Si concentration; second, the type of semiconductor in amorphous state changes from an intrinsic semiconductor to the n-type semiconductor as the Si concentration is increased; third, in isothermal treatments, provided the Si concentration is over some certain value, the incubation and transition time totally change, which means the controlling factor in the crystallization changes from the interface reaction to the diffusion.

Preface I
Table of Contents II
List of Illustrations X
List of Tables XII
Chapter 1 Preface 1
1.1 Introduction 1
1.2 Advantage 3
1.3 Developement 4
Chapter 2 Review 7
2.1 Pnictide 7
2.2 The Principle of Operation of PRAM 7
2.2.1 The SET Switching 10
2.2.2 The RESET switching 11
2.2.3 The Data Read-Out Ability 11
2.2.4 The Data Retenrion 12
2.3 The Phase-Change Material 13
2.4 The Properties of GeSb Alloy 15
2.5 The Crystallization Kinetics 18
2.5.1 The Crystallization Kinetics for Constant Heating Rates 18
2.5.2 The Crystallization Kinetics 21
2.5.3 Deviations from JMAK Kinetics 29
2.5.4 The Properties of Semiconductor 38
2.6 Research Purpose 39
Chapter 3 Experiments 40
3.1 Experimental Procedure 40
3.1.1 Substrate Cleaning 40
3.1.1.1 Beaker Cleaning 40
3.1.1.2 SiO2/Si Substrate Cleaning 41
3. 1.2 Planar-Type Electrode Proces….…………………………...42
3.1.3 Analysis of Film Properties 43
3.1.3.1 Analysis of Thermal Properties 43
3.2 Instrument Introduction 44
3.2.1 6-Inch Magnetron Sputtering System 44
3.2.2 Electrical Measurement System 45
Chapter 4 Results and Discussion 47
4.1 Composition Content 48
4.2 Analysis for Suitableness Degree of Sanple Structure for JMAK theory ………………………………………………………………………49
4.3 Crystallization Temperature 53
4.4 Properties of Amorphous Semiconductor in GeSb9-xSi 56
4.5 Crystallization Mechanism in Isothermal treatments 65
4.6 Crystallization Activation Energy 84
4.7 Incubation Time 93
4.8 Data Retention and Tactics for Appling in Device 97
Chapter 5 Conclusion 99
Reference 101

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