臺灣博碩士論文加值系統

本篇論文中，使用雙電漿輔助有機金屬化學氣相沉積（DPEMOCVD）設備在低溫下成長的氧化鋅（ZnO）薄膜，其平均透光率為87％，電阻率為6.94 Ωcm。再以液相沉積法，成長銀奈米粒子於氧化鋅薄膜上。分析不同硝酸銀、氫氧化鈉濃度、不同沉積時間、不同退火溫度、不同退火時間，對氧化鋅薄膜特性之影響。硝酸銀最佳濃度為0.12M在退火時間為三分鐘與溫度500℃，銀奈米粒子散布氧化鋅之電阻率為2.74×10-3 Ωcm，平均穿透率82%，薄膜優點係數為1.30×10-5Ω-1，在XRD分析中所成長的銀散布氧化鋅薄膜中擁有氧化鋅(002)峰值與銀(200)峰值。使用氫氧化鈉可使銀還原反應速率加快，最佳氫氧化鈉濃度為0.025M，在退火時間為三分鐘與溫度500℃時，可使電阻率達到6.98×10-4 Ωcm，且穿透率為80.7%，薄膜優點係數為373×10-5Ω-1。
最後我們將銀散布氧化鋅薄膜應用於光電元件上，當做氮化銦鎵/氮化鎵發光二極體的透明導電層（TCL）與有機發光二極體上。並與使用銦錫氧化物（ITO）當氮化銦鎵/氮化鎵發光二極體的透明導電層與有機發光二極體陽極作比較，結果顯示氮化銦鎵/氮化鎵發光二極管與有機發光二極體的不論在銀散布氧化鋅薄膜或是銦錫氧化物上皆呈現相近的光學和電學特性，表示使用DPEMOCVD系統與液相沉積法成長出的銀散布氧化鋅薄膜可以代替銦錫氧化物當作氮化銦鎵/氮化鎵發光二極體的透明導電層使用。

In this article, we have reported on the low-temperature-grown zinc oxide (ZnO) grown by dual-plasma-enhanced metal organic chemical vapor deposition (DPEMOCVD) facility. The ZnO grown on sapphire at 185 oC . A transmittance of 87 %, and resistivity of 6.94 Ωcm. Then deposition of silver nanoparticles on top of the zinc oxide thin films by liquid phase deposition. Analysis of different concentrations of silver nitrate and sodium hydroxide, different deposition time, different annealing temperatures, different annealing time. The optimum concentration of 0.12M silver nitrate and an annealing temperature 500 oC and six minute . A transmittance of 82 % and resistivity of 2.74×10-3 Ωcm, the film coefficient 1.30×10-5Ω-1. The XRD analysis of the growth of Ag/ZnO film has a (002) peak of the silver (111) peak. Silver reduction using sodium hydroxide can accelerate the reaction rate, the optimal concentration of 0.025M sodium hydroxide at 500 oC annealing temperature and six minute, the resistivity can reach 6.98×10-4 Ωcm, and transmittance of 80.7%.
Finally, we apply the Ag/ZnO thin film to InGaN/GaN light-emitting diode as the transparent conductive layer (TCL). As compared to the InGaN/GaN LEDs with indium-tin-oxide (ITO) TCL, the InGaN/GaN LEDs with Ag/ZnO thin film present the same optical and electrical characteristics, indicating that the Ag/ZnO thin film grown by DPEMOCVD system can be a candidate for TCL in InGaN/GaN LEDs.





Keywords:DPEMOCVD; Liquid phase deposition; Ag/ZnO

摘要............ I
誌謝............ III
目錄............ IV
第一章 導論...... 1
1.1 前言........ 1
1.2 簡介........ 2
1.2.1氧化鋅..... 2
1.2.2金屬...... 3
1.3 研究動機..... 4
第二章 基礎理論與實驗流程... 5
2.1 電漿理論............. 5
2.4 DPEMOCVD系統 ........7
2.5光化學反應系統......... 8
2.6 實驗流程............. 9
2.7 量測分析............. 11
2.7.1 Α-STEP膜厚量測儀... 11
2.7.2霍爾量測原理與量測.... 12
2.7.3 X射線繞射儀(X-ray diffraction，XRD)........ 12
2.7.4紫外線-可見光-紅外線光譜儀(UV-Vis Spectrum).... 13
2.7.5場發掃描式電子顯微鏡(FE-SEM).................. 14
2.7.6原子力顯微鏡(Atomic Force Microscope, AFM)... 14
2.7.7四點探針(Four-Point Probe).................. 14
第三章 實驗結果與討論.............................. 16
3.1不同硝酸銀濃度成長銀奈米粒子散佈氧化鋅薄膜.......... 16
3.1.1不同硝酸銀濃度成長銀奈米粒子散佈氧化鋅薄膜之結晶特性........ 16
3.1.2 不同硝酸銀濃度成長銀奈米粒子散佈氧化鋅薄膜之電特性........ 19
3.1.3不同硝酸銀濃度成長銀奈米粒子散佈氧化鋅薄膜之光特性......... 21
3.2不同退火溫度對銀奈米粒子散佈氧化鋅薄膜的影響................. 23
3.2.1 不同退火溫度與銀奈米粒子散佈氧化鋅薄膜結晶特性之關係....... 23
3.2.2 不同退火溫度與銀奈米粒子散佈氧化鋅薄膜電特性之關係......... 27
3.2.3 不同退火溫度與銀奈米粒子散佈氧化鋅薄膜光特性之關係......... 29
3.2.4 不同退火時間與銀奈米粒子散佈氧化鋅薄膜特性之關係.......... 30
3.3 以氫氧化鈉改善銀奈米粒子在銀奈米粒子散佈氧化鋅薄膜之比例與分布. 34
3.3.1改變氫氧化鈉濃度在銀奈米粒子散佈氧化鋅薄膜的結晶特性........ 34
3.3.2改變氫氧化鈉濃度在銀奈米粒子散佈氧化鋅薄膜的表面特性.........35
3.3.3改變氫氧化鈉濃度在銀奈米粒子散佈氧化鋅薄膜電特性........... 36
3.3.4改變氫氧化鈉濃度在銀奈米粒子散佈氧化鋅薄光學特性........... 37
3.3.5使用銀奈米粒子散佈氧化鋅薄膜良率測試..................... 38
3.4在銀奈米粒子散佈氧化鋅薄膜應用於元件....................... 39
3.4.1銀奈米粒子散佈氧化鋅薄膜在玻璃基板上應用在有機發光二極體上... 39
3.4.2使用銀奈米粒子散佈氧化鋅薄膜製作InGaN/GaN LED透明接觸層(TCL)................................................. 41
第四章 結論............................................. 44
參考文獻 ................................................45
Extended Abstract...................................... 47
Abstract............................................... 47
簡歷.................................................... 50

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