臺灣博碩士論文加值系統

　　本實驗使用濺鍍機製程，透過不同的氧氣流量作為參數，交互鍍製多層富矽氧化物/二氧化矽薄膜，進行三道黃光微影之後，即可完成多層富矽氧化物/二氧化矽發光二極體。
　　在多層富矽氧化物/二氧化矽薄膜當中進行光致發光的量測，可以發現光譜隨著氧氣流量的變化呈現奈米矽晶尺寸效應，在較高的激發能量下，更可以發現薄膜主要的發光來源為奈米矽晶或是輻射復合缺陷，包括E’δ center和NOV。另外，在不同的激發能量下，更是發現光譜的發光強度隨激發能量增加而下降的趨勢，以及奈米矽晶尺寸選擇效應。最後，經過鈍化的薄膜在發光強度上有大幅度的增加。
　　在多層富矽氧化物/二氧化矽發光二極體當中進行電致發光的量測，可以發現光譜隨著氧氣流量的變化而異，元件的發光來源非常多，包括奈米矽晶、NBOHC、E’δ center和NOV。在較強的電場激發下，甚至出現能帶填充效應，也可以發現奈米矽晶的第一激發態發光。另外，隨著氧氣流量的變化，可以發現奈米矽晶和輻射復合缺陷的貢獻發光有消長的趨勢。最後，隨著氧氣流量的不同，光致發光與電致發光的結果不一定一致。

In this study, silicon-rich oxide/silicon dioxide multilayers (SRO/SiO2 MLs) were synthesized by reactive magnetron sputtering in a gas mixture of argon and oxygen. In particularly, the variation from 0 to1.0 sccm in the oxygen flow was used. The structural, optical, and electrical properties of the SRO/SiO2 MLs were investigated by TEM, PL, XPS and EL measurements, where the excitation laser was employed by the 325, 532 and 633 nm for the PL analysis. The PL emission was originated from the band-to-band transition within the Si-NCs and the radiative recombination centers at the Si-NCs/SiO2 interface. The results demonstrate that size of Si-NCs was decreased due to quantum-size effect as increasing the oxygen flow. The enhancement of EL in the visible range was achieved by using oxygen flow of 0.15 sccm. Relationship between PL and EL in the SRO/SiO2 MLs has been examined. The blueshift in the EL was attributed to the band filling effect under high current injection mode. The EL spectra at different oxygen flows were recorded, and the correlation between charge transport mechanisms and EL properties was discussed.

第一章、緒論 1
1-1前言 1
1-2研究動機 2
1-3論文架構 3
第二章、文獻回顧與理論基礎 4
2-1奈米矽晶 4
2-1-1塊材矽和奈米矽晶的比較 4
2-1-2量子侷限效應 4
2-1-3量子井的能量量子化 6
2-1-4量子點的能量量子化 11
2-1-5奈米矽晶量子點 15
2-2本徵吸收與發光 16
2-2-1吸收與發光概論 16
2-2-2塊材的本徵吸收與發光 17
2-2-3量子井的本徵吸收與發光 24
2-2-4奈米矽晶的本徵吸收與發光 28
2-2-5光致發光與電致發光 28
2-3二氧化矽相關缺陷 29
2-3-1矽懸鍵缺陷－Pb center 30
2-3-2氧空缺缺陷－Neutral Oxygen Vacancy(NOV) 30
2-3-3氧空缺缺陷－E’γ center 31
2-3-4氧空缺缺陷－E’δ center 32
2-3-5氧相關缺陷－Non-Bridging Oxygen Hole Center(NBOHC) 32
第三章、實驗步驟與儀器量測 34
3-1實驗流程 34
3-1-1矽基板準備與清洗 34
3-1-2成長化學氧化層 35
3-1-3鍍製主動層薄膜 35
3-1-4退火主動層薄膜 37
3-1-5第一道黃光微影 37
3-1-6乾蝕刻主動層薄膜 38
3-1-7鍍製氧化銦錫薄膜 39
3-1-8退火氧化銦錫薄膜 39
3-1-9第二道黃光微影 40
3-1-10濕蝕刻氧化銦錫薄膜 41
3-1-11第三道黃光微影 42
3-1-12鍍製多重金屬電極 43
3-1-13剝離多重金屬電極 44
3-1-14退火多重金屬電極 44
3-1-15封裝與打線發光二極體元件 44
3-1-16量測流程 45
3-2物性薄膜分析 46
3-2-1微光致發光光譜儀 46
3-2-2高解析分析電子顯微鏡 47
3-2-3高解析Ｘ光繞射儀 48
3-2-4高解析電子能譜儀 49
3-3電性元件分析 50
3-3-1電致發光光譜儀 50
3-3-2電流-電壓量測 50
第四章、結果與討論 52
4-1多層富矽氧化物/二氧化矽薄膜之物性探討 52
4-1-1多層富矽氧化物/二氧化矽薄膜之光致發光探討 53
4-1-2鈍化對多層富矽氧化物/二氧化矽薄膜之光致發光比較 63
4-1-3多層富矽氧化物/二氧化矽薄膜之結晶性探討 65
4-1-4多層富矽氧化物/二氧化矽薄膜之成份比探討 68
4-1-5多層富矽氧化物/二氧化矽薄膜之光致發光模型 73
4-1-6結論 77
4-2多層富矽氧化物/二氧化矽發光二極體之光電特性探討 78
4-2-1熱氧化層與化學氧化層的電流-電壓特性比較 79
4-2-2多層富矽氧化物/二氧化矽發光二極體之電致發光探討 82
4-2-3多層富矽氧化物/二氧化矽發光二極體之電致發光的來源比較 91
4-2-4多層富矽氧化物/二氧化矽發光二極體之電致發光的效率比較 94
4-2-5多層富矽氧化物/二氧化矽發光二極體之電流-電壓特性 98
4-2-6多層富矽氧化物/二氧化矽發光二極體之電致發光模型 103
4-2-7多層富矽氧化物/二氧化矽薄膜之光致發光和多層富矽氧化物/二氧化矽發光二極體之電致發光的比較 107
4-2-8結論 111
第五章、總結論與未來規劃 112
5-1總結論 112
5-2未來規劃 113
Reference 114

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