臺灣博碩士論文加值系統

本論文主要探討有機記憶體的光電特性，對不同結構的元件進行電晶體與記憶體量測，而記憶體量測上則以是否使用照光輔助區分，此論文結構分為PMMA、PMMA/2-碘芴、PMMA/Na/2-碘芴、PMMA/Na/P3HT:PS/2-碘芴。
第一部分為量測上述結構的電晶體特性及暗室下的記憶體量測，在電晶體特性分析上，所有結構的元件皆擁有基本電晶體性質，而在記憶效應的量測上以對電晶體單獨施加閘極偏壓的方式探討該結構是否在暗室下擁有記憶效應。
第二部分為量測上述結構在使用光輔助下的記憶效應，在施加光輔助下可使元件擁有記憶效應，本論文中較好的記憶窗口可達9.23 V，操作開關電流比達27.4，電荷保存時間約7分鐘，可靠度達50次記憶體寫入與抹除循環。

This thesis mainly discusses the photoelectric characteristics of organic memory, and conducts the measurement of the transistor and memory for the components of different structures, while the measurement of the memory is divided by the use of illumination. The structure of this paper is divided into PMMA, PMMA/2- Iodine, PMMA/Na/2-iodonium, PMMA/Na/P3HT: PS/2-iodonium.
The first part is to measure the transistor characteristics of the above structure and the memory measurement under the darkroom. In the analysis of the transistor characteristics, all the components of the structure have basic crystal properties, and the measurement of the memory effect is performed on the transistor. The way in which the gate bias is applied alone is to investigate whether the structure has a memory effect under the darkroom.
The second part is to measure the memory effect of the above structure under the use of light. Under the application of light, the component can have memory effect. The better memory window in this paper can reach 9.23 V, and the operating On/Off current ratio is 27.4. The charge retention time is about 7 minutes, and the reliability is up to 50 memory program and erase cycles.

摘要 I
Abstract II
致謝 III
目錄 IV
表目錄 VI
圖目錄 VII
第一章 緒論 1
1-1 前言 1
1-2 研究動機 1
1-3 論文架構 2
1-4 文獻回顧 2
第二章 元件基礎原理與實驗流程 5
2-1 有機薄膜電晶體(OTET)介紹 5
2-1-1 有機薄膜場效電晶體的運作原理 5
2-1-2 有機半導體內載子的傳遞方式 5
2-2 有機薄膜電晶體之重要參數 6
2-2-1 載子遷移率(Mobility)，µ(cm2/Vs) 6
2-2-2 開關電流比(On/Off Current Ratio)，Ion/Ioff 7
2-2-3 次臨界擺幅(Subthreshold swing)，S.S.(V/dec) 7
2-2-4 臨界電壓(Threshold voltage)，VTh(V) 7
2-3 非揮發性記憶體介紹 8
2-3-1 非揮發性記憶體運作方式 8
2-3-2 非揮發性記憶體載子傳輸機制 9
2-3-3 非揮發性記憶體之重要參數 10
2-4 實驗材料 11
2-4-1 半導體材料 11
2-4-2 高分子材料 11
2-4-3 奈米粒子材料 11
2-4-4 穿隧絕緣層材料 12
2-5 元件製作 12
2-5-1 基板處理 12
2-5-2 基本元件製作 12
2-6 實驗用儀器 13
2-6-1 物理氣相沉積系統(Physical vapor deposition，PVD) 13
2-6-2 表面輪廓儀(Alpha-step profilometer) 13
2-6-3 X-ray 繞射量測系統(XRD) 13
2-6-4 原子力顯微鏡(AFM) 13
2-6-5 紫外光-可見光 光譜儀系統(UV-Vis) 14
2-6-6 UV LED燈泡 14
2-6-7 電性量測分析儀(Keithley 2636) 14
第三章 暗室下之記憶量測分析 22
3-1 基本元件製作與分析 22
3-1-1 元件製作 22
3-1-2 PMMA元件基礎電晶體特性分析 22
3-1-3 PMMA元件暗室下之記憶量測分析 22
3-2 加入2-碘芴之元件製作與分析 23
3-2-1 PMMA/2-Iodo之元件製作 23
3-2-2 加入2-碘芴之基礎電晶體電特性分析 23
3-2-3 PMMA/2-Iodo元件暗室下之記憶量測分析 24
3-3 Na浮動閘極層記憶元件製作與分析 25
3-3-1 PMMA/Na NPs/2-Iodo之元件製作 25
3-3-2 加入Na NPs之元件基礎電晶體特性分析 25
3-3-3 PMMA/Na/2-Iodo元件暗室下之記憶量測分析 26
3-4 浮閘層中加入P3HT:PS之記憶體元件製作與分析 27
3-4-1 PMMA/Na/P3HT:PS/2-Iodo記憶元件製作 27
3-4-2 PMMA/Na/1:1/2-Iodo元件量測結果分析 27
3-4-3 PMMA/Na/ 1:2/2-Iodo元件量測結果分析 29
3-4-4 PMMA/Na/ 1:3/2-Iodo元件量測結果分析 30
3-5 記憶體暗室下量測之整理與討論 31
第四章 使用光輔助之記憶量測分析 57
4-1 PMMA元件使用光輔助之記憶量測分析 57
4-2 PMMA/2-Iodo元件使用光輔助之記憶量測分析 58
4-3 PMMA/Na/2-Iodo元件使用光輔助之記憶量測分析 58
4-4 P3HT:PS=1:1之元件使用光輔助之記憶量測分析 59
4-5 P3HT:PS=1:2之元件使用光輔助之記憶量測分析 60
4-6 P3HT:PS=1:3之元件不使用光輔助之記憶量測分析 60
4-7 使用光輔助記憶體整理與討論 61
第五章 結果與未來展望 74
參考資料 75

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