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研究生:陳建智
研究生(外文):Jian-Zhi Chen
論文名稱:利用緩衝層結構改善薄膜沉積於壓克力基板附著度之研究
論文名稱(外文):A Study of the Adhesion Improvement on a Thin Film Deposited on the PMMA Substrate Using Buffer-Layered Structure
指導教授:劉代山
指導教授(外文):Day-Shan Liu
學位類別:碩士
校院名稱:國立虎尾科技大學
系所名稱:光電工程系光電與材料科技碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2016
畢業學年度:104
語文別:中文
論文頁數:82
中文關鍵詞:電漿增強化學氣相沉積系統壓克力附著度緩衝層殘留應力
外文關鍵詞:PECVDpolymethyl methacrylate(PMMA)adhesionbuffer layerresidual stress
相關次數:
  • 被引用被引用:5
  • 點閱點閱:251
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本研究將使用聚甲基丙烯酸甲酯(壓克力)作為基板,經由電漿增強化學氣相沉積系統(Plasma-Enhaced Chemical Vapor Deposition;PECVD)、熱蒸鍍系統(Thermal Evaporation Coater)、射頻磁控共濺鍍系統(RF magnetron co-sputtering system)以及噴塗法(spray painting),製備硬化膜、反射膜、抗反射膜、透明導電膜作為功能性薄膜測試其附著度並改善。
研究結果顯示,當功能性薄膜沉積於壓克力基板時附著度只有0B等級,為了提高功能性薄膜在壓克力基板上的附著度,而利用電漿增強化學氣相沉積系統(PECVD)沉積有機矽基薄膜作為緩衝層,目的為增強壓克力基板與功能性薄膜之間的附著度,並減少薄膜沉積後的殘留應力,使薄膜附著度為5B等級,再經由力道100 mN的絨布磨擦1000次,鹽水及鹽酸環境測試來探討其功能性薄膜改善結果對於嚴苛環境下的穩定性。
為了分析薄膜附著度改善原因,使用表面輪廓儀量測薄膜沉積前後曲率,再經由Stoney方程式計算出殘留應力,當殘留內應力越小則表示薄膜附著度越好。以傅立葉轉換紅外線光譜量測出薄膜的化學鍵結,分析材料的同質性跟附著度的關係。利用X射線繞射儀量測薄膜的結晶性,分析結晶性對於薄膜附著度的影響。量測接觸角得知薄膜表面親疏水性,分析親疏水對於附著度影響。使用原子力顯微鏡量測薄膜的粗糙度,分析粗糙度與附著的關係。


This study will be used polymethyl methacrylate (acrylic) as the substrate, by plasma enhanced chemical vapor deposition system (PECVD), thermal evaporation system, RF magnetron co-sputtering system, and spray painting, testing and adhesion improvement on a functional thin film that include hard coatings thin film, reflection thin film, anti-Glare Coating and transparent conductive thin film.
The results showed that when the functional thin film adhered to the acrylic substrate only 0B degree level, in order to improve the adhesion of the functional thin film on the acrylic substrate using PECVD deposition of the organic silicon thin film as a buffer layer for the purpose of enhancing the adhesion of the functional thin film between the acrylic substrate and to reduce the residual stress after the thin film deposition, the degree of adhesion level reaches 5B, then through the force of 100 mN flannel friction 1000 times, hydrochloric acid and brine environmental testing to explore the functional thin film for improving results under harsh environment stability.
In order to analyze the reasons of the improvement on the thin film, and using a surface profiler measurement of curvature before and after the thin film deposition, and then calculate for residual stress via Stoney equation, when the residual stress is smaller the better adhesion of the thin film.Using Fourier transform infrared spectroscopy measure thin film chemical bonding, and analyze attachment relationship with the homogeneity of material.X-ray diffraction measure the crystallinity of the thin film, the thin film is attached to the analysis of the crystalline degree of influence.Measuring the contact angle that the thin film surface hydrophilic and hydrophobic, hydrophilic and hydrophobic for analysis of the impact on attachment.Measured using an atomic force microscope roughness of the thin film, analyze the relationship between roughness and adhesion.


摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vi
圖目錄...vii
第一章 緒論...1
1.1前言...1
1.2文獻回顧...1
1.3研究動機...3
第二章 理論基礎...7
2.1電漿成分及原理...7
2.2化學氣相沉積薄膜之成長機制...7
2.3電漿增強化學氣相沉積法...8
2.4物理熱蒸鍍理論...8
2.5噴塗理論...8
2.6射頻磁控濺鍍原理...9
2.7薄膜成長原理...9
2.8薄膜應力原理及機制...10
第三章 實驗方法及步驟...17
3.1實驗流程...17
3.2實驗系統...17
3.2.1電漿增強化學氣相沉積系統...17
3.2.2金屬蒸鍍系統...18
3.2.3共濺鍍系統...18
3.3薄膜量測分析...19
3.3.1原子力顯微鏡(Atomic force microscope;AFM)...19
3.3.2 α-step表面輪廓儀...19
3.3.3低掠角X光繞射儀(Grazing incident X-ray diffraction pattern;GIXRD)...19
3.3.4傅立葉轉換紅外線吸收光光譜儀(Fourier transform infrared spectroscopy;FTIR)...20
3.3.5接觸角分析...20
3.4薄膜附著測試...20
3.4.1百格測試...20
3.4.2環境測試...20
3.4.3磨耗測試...21
第四章 結果與討論...29
4.1薄膜附著度測試及改善...29
4.1.1以電漿增強化學氣相系統沉積氧化矽光學硬化膜之研究...29
4.1.2以熱蒸鍍系統沉積鋁反射膜之研究...30
4.1.3以噴塗製程沉積抗眩膜之研究...31
4.1.4以射頻磁控共濺鍍系統沉積氧化鋅及氧化銦錫-氧化鋅透明導電膜之研究...31
4.2薄膜應力特性分析...33
4.2.1以電漿增強化學氣相系統沉積氧化矽光學硬化膜應力分析...33
4.2.2以熱蒸鍍系統沉積鋁反射膜應力分析...34
4.2.3以射頻磁控共濺鍍系統沉積氧化銦錫-氧化鋅透明導電膜應力分析...35
4.3薄膜材料特性分析...36
4.3.1原子力顯微鏡分析...36
4.3.2 X光繞射分析...36
4.3.3接觸角分析...36
4.3.4傅立葉轉換紅外線光譜分析...37
第五章 結論...75
參考文獻...77
Extended Abstract...78
簡歷(CV)...82

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