臺灣博碩士論文加值系統

本研究主要目的是探討在非晶矽p-i-n 太陽能電池製作銀反射層電極的光電特性研究。首先是利用電漿輔助化學氣相沉積系統(plasma-enhanced chemical vapor deposition, PECVD)製備所要的非晶矽氫薄膜(a-Si:H)材料；首先在矽基板上成長一層a-Si:H緩衝層，再沉積p-type a-Si:H薄膜，接著使用氫電漿處理a-Si:H緩衝層後，再沉積a-Si:H薄膜，用氫氣稀釋源氣體SiH4的方式沉積n-type a-SiC:H薄膜，然後在n-type a-SiC:H薄膜上利用射頻磁控濺渡系統(Radio-Frequency magnetron sputtering system)濺鍍AZO，用黃光技術作上銀電極，完成具有銀反射層的p-i-n太陽能電池。最後用太陽光模擬光源AM 1.5，強度為100 mW/cm2照射在未加上銀電極的p-i-n太陽能電池，測量得到短路電流為3.423 mA/cm2、開路電壓Voc為 630mV、填充因子FF=0.255及能量轉換效率為5.5%。加上銀電極的p-i-n太陽能電池在相同的量測條件下，量測得到短路電流3.86 mA/cm2、開路電壓Voc為 630mV、填充因子FF=0.255及能量轉換效率為6.21%。這研究顯示加上銀電極後之太陽能電池短路電流提升12.7%，能量轉換效率提升12.9%。

The main purpose of this study was to investigate the amorphous silicon p-i-n solar cell production in the silver reflective layer of optical and electrical properties of electrodes.. First is to utilize the power coupled plasma chemical vapor deposition system (plasma-enhanced chemical vapor deposition, PECVD) amorphous silicon hydrogen to be prepared film (a-Si: H) materials; first grown on Si substrate layer a-Si: H buffer layer , and then deposited p-type a-Si: H film, then use the hydrogen plasma treatment a-Si: H buffer layer, and then deposited a-Si: H films by hydrogen dilution of source gases SiH4 way deposition n-type a -SiC: H films, and then in n-type a-SiC: H films by RF magnetron sputtering system (Radio-Frequency magnetron sputtering system) sputtered AZO, with yellow for the silver electrode technology, complete with silver reflective layer of pin solar cells. T Finally, simulated sunlight light AM 1.5 illumination condition with a solar intensity of 100 mW/cm2 without silver electrodes get the short-circuit current density Jsc = 2.614 mA/cm2, the open-circuit voltage Voc = 630mV, the fill factor FF = 0.255, and the power conversion efficiencies η = 4.2%.；with silver electrodes get the short-circuit current density Jsc = 3.86 mA/cm2, the open-circuit voltage Voc = 630mV, the fill factor FF = 0.255, and the power conversion efficiencies η = 6.21%. Study Showing with silver electrode of solar cells ，the short-circuit current the increase of 12.7%, 12.9% energy conversion efficiency

目 錄

中文摘要... .….i
英文摘要 …ii
致謝 ...iii
目錄 …iv
表目錄 ….v
圖目錄 …vi
第一章 緒論 ….1
1.1 研究動機 ….1
1.2 研究方法與論文架構 ….1
第二章 理論基礎與文獻回顧..........................................................................4
2.1太陽能電池簡介 ....4
2.1.1 太陽能電池起源 ….5
2.1.2 太陽能電池的發展 .......5
2.1.3 太陽能電池工作原理 ….7
2.1.4 理想太陽能電池分析 ….8
2.2 太陽能電池分析 ….9
2.2.1太陽能電池特性 ..10
2.2.2太陽能電池短路電流(Short circuit current，ISC) ..10
2.2.3太陽能電池開路電壓(Open circuit voltage，VOC) ..10
2.2.4太陽能電池光電轉換效率(Power efficiency) ..10
2.2.5太陽能電池光子轉換電流效率 ...11
2.3太陽能電池重要參數 ...11
2.4 光電轉換原理 ...13
2.5 P-I-N接面…. ...14
2.6 濺鍍(Sputter)原理...............................................................................14
2.6.1電漿原理 .…14
2.6.2 反應式濺鍍法(Reactive Sputtering) .............................................16
2.6.3 直流式濺鍍法(Direct Current Sputtering) .....................................16
2.6.4 射頻濺鍍法(Radio Frequency Sputtering) .....................................17
2.6.5磁控濺鍍法(Magnetron sputtering) ......................................17
2.7 電漿輔助化學氣相沈積(PECVD) .......................................18
2.8 描式電子顯微鏡(Scanning Electron Microscope，SEM) .....................19
第三章 實驗方法與步驟...........................................................................21
3.1 實驗架構...........................................................................21
3.2 實驗設備...........................................................................21
3.2.1 快速退火爐(Rapid thermal anneal) ......................................21
3.2.2磁控濺鍍設備(Sputter) ..........................................21
3.3測儀器與量測系統架設.................................................................22
3.3.1反射光譜量測系統.................................................................22
3.3.2流電壓曲線量測及效率程式........................................................22
3.3.3 IPCE量測系統.................................................................22
3.4 實驗步驟...........................................................................22
第四章 實驗結果與討論...........................................................................24
第五章 結論...........................................................................25
第六章 參考文獻...........................................................................41

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