臺灣博碩士論文加值系統

本論文以稀土元素氧化鋱(Tb4O7)作為金氧半結構非揮發性記憶體元件之電荷捕捉層。首先運用不同氣體及流量製作二氧化矽穿隧層及對氧化鋱電荷捕捉層施行沉積後氧化熱處理，藉由氮氣及氧氣調控金氧半結構非揮發性記憶體元件之記憶特性研究，接著改變不同電荷阻擋層厚度，最後探討白金(Pt)摻雜氧化鋱電荷捕捉層之記憶特性研究。透過量測元件的各個特性包含遲滯、寫入、抹除、耐久力及持久力等參數獲得最佳特性。
實驗結果顯示，氧化鋱電荷捕捉層的記憶特性主要是以電洞捕捉為主，與利用氧氣熱處理氧化鋱電荷捕捉層比較，則利用氮氣處理的氧化鋱具有比較大的記憶窗，同時具有較佳的寫入、抹除及耐久力等特性，而且氮氣量越大其記憶窗越大。相同寫入電壓下，阻擋層厚度20nm有最佳的電子捕獲特性，只要10-6秒就能將電荷寫入，反之10nm和25nm則需要10秒及1秒的時間。阻擋層厚度20nm的耐久力特性在經過1000次的寫入/抹除後，仍保持著優良的電特性，而10nm和25nm則撐不到10次反覆的寫入/抹除。摻雜白金在電荷捕捉層，在濺鍍時間50秒發現各種電特性都獲得極大的改善。記憶窗口比沒鍍白金時大了6.6伏，且因電子捕獲特性提升，電荷寫入特性及抹除特性所需時間及電壓都分別的降低，正電壓寫入的持久力特性經過4000秒後仍然保存著電荷，且寫入所需時間是其他製程參數元件的1/10，尤其耐久力特性變得極佳，經過1000次寫入/抹除後幾乎沒有電荷損失。

Memory characteristics of metal-oxide-semiconductor (MOS) structured nonvolatile memory capacitors with terbium oxides (Tb4O7) as charge trapping layers were demonstrated in this work. First, the memory characteristic of MOS structured nonvolatile memory capacitors with various tunneling oxide were demonstrated. Then, the SiO2/Tb4O7/SiO2 stacked films in MOS structured nonvolatile memory capacitors with various gas ambient treated Tb4O7 as charge trapping layers were proposed. Various gas ambient treatments include oxygen and nitrogen. Furthermore, the MOS structured nonvolatile memory capacitors with Tb4O7 charge trapping layers and various blocking oxide thicknesses were also investigated. Finally, the effects of various Pt-doped Tb4O7 as charge trapping layers of MOS structured nonvolatile memory capacitors were presented.
The results suggest that the memory effect is mainly due to the holes trapping. Compared with oxygen treatment, larger memory window can be achieved by incorporated more nitrogen into Tb4O7 dielectric. Furthermore, the better properties, including programming time, erasing time, and endurance, were presented by more nitrogen treated Tb4O7 dielectric as charge trapping layers. The programming time of 10-6 s for the sample with 20 nm of blocking oxide can be achieved. On the contrary, it should be 10 and 1 s for the other samples. The endurance of 1000 times for sample with the 20 nm of blocking oxide sample is better than that of the other samples. By tuning Pt-doped Tb4O7, the excellent memory characteristics, including the hysteresis, and the programming/erasing time, were be demonstrated. Compared with the sample without Pt-doped Tb4O7 dielectronics, there is a larger shift of 6.6 V for the sample with the sputtering time of 50 s. Moreover, the retension of 4000 s and the redurance of 1000 s were also be demonstrated for the sample with the sputtering time of 50 s.

摘要.....i
Abstract.....ii
誌謝.....iii
目錄.....iv
表目錄.....vi
圖目錄.....vii
第一章 緒論.....1
1.1高介電係數材料(High-k dielectric)研究發展文獻回顧.....1
1.2沉積後退火氣體處理及阻擋層厚度的影響文獻回顧.....2
1.3奈米晶體(Nanocrystals)研究發展文獻回顧.....3
1.4研究動機.....4
1.5論文架構.....4
第二章 元件製程與量測.....5
2.1使用不同氣體環境對SiO2穿遂氧化層做快速加熱退火處理.....5
2.1.1晶圓清洗處理.....5
2.1.2穿遂氧化層的製程.....5
2.1.3電荷捕獲層的製程.....5
2.1.4阻擋氧化層的製程.....6
2.1.5上下電極的製程.....6
2.2使用不同氣體環境對Tb4O7電荷捕獲層做沉積後氧化熱處理.....6
2.2.1晶圓清洗處理.....6
2.2.2穿遂氧化層的製程.....7
2.2.3電荷捕獲層的製程.....7
2.2.4阻擋氧化層的製程.....7
2.2.5上下電極的製程.....7
2.3沉積不同厚度的SiO2作為阻擋氧化層.....7
2.3.1晶圓清洗處理.....7
2.3.2穿遂氧化層的製程.....8
2.3.3電荷捕獲層的製程.....8
2.3.4阻擋氧化層的製程.....8
2.3.5上下電極的製程.....8
2.4對Tb4O7摻雜不同厚度的Pt作為電荷捕獲層.....8
2.4.1晶圓清洗處理.....9
2.4.2穿遂氧化層的製程.....9
2.4.3電荷捕獲層的製程.....9
2.4.4阻擋氧化層的製程.....9
2.4.5上下電極的製程.....9
2.5元件電特性與可靠度特性量測.....10
第三章 探討具氧化鋱電荷捕捉層之金氧半結構非揮發性記憶體元件
特性研究.....20
3.1 使用不同氣體環境對SiO2穿遂氧化層做快速加熱退火處理.....20
3.1.1結果與討論.....20
3.1.2結論.....22
3.2 使用不同氣體環境對Tb4O7電荷捕獲層做沉積後氧化熱處理.....22
3.2.1結果與討論.....22
3.2.2結論.....24
3.3 沉積不同厚度的SiO2作為阻擋氧化層.....25
3.3.1結果與討論.....25
3.3.2結論.....27
3.4 沉積不同厚度的Pt作為電荷捕獲層.....28
3.4.1結果與討論.....28
3.4.2結論.....30
第四章 結論與建議.....101
4.1結論.....101
4.2建議.....101
參考文獻.....102
英文論文大綱.....105
作者簡歷.....111

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