(34.237.52.11) 您好!臺灣時間:2021/05/18 13:41
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:許績威
研究生(外文):Ji-Wei Shiu
論文名稱:具蕭特基源/汲極的上閘極型非晶矽鍺與多晶矽薄膜電晶體
論文名稱(外文):Top-Gate a-Si1-xGex:H and Poly-Si Thin-Film Transistors with Schottky Source/Drain Contacts
指導教授:洪志旺
指導教授(外文):Jyh-Wong Hong
學位類別:碩士
校院名稱:國立中央大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:91
語文別:英文
論文頁數:46
中文關鍵詞:蕭特基接觸的薄膜電晶體
外文關鍵詞:Thin-Film Transistors with Schottky Source/Drain
相關次數:
  • 被引用被引用:0
  • 點閱點閱:91
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0

在本論文中,我們成功製作出利用鋁/銻雙層金屬作為源/汲極的蕭特基接觸的非晶矽(a-Si:H)、非晶矽化鍺(a-SiGe:H)、多晶矽(poly-Si)薄膜電晶體。其中,藉由使用一層很薄的五族金屬銻來取代傳統的n型摻雜,我們可有效率地節省傳統薄膜電晶體的製程步驟進而增加製程效率。
實驗結果顯示,以多晶矽為通道的薄膜電晶體擁有最好的電晶體特性,而在非晶矽的材料中,以非晶矽當通道的元件電性比以非晶矽鍺當通道的元件電性來的優越。在同類的非晶矽鍺薄膜電晶體中,我們發現,當通道中鍺含量越高,電晶體的飽和電流及遷移律會上升而臨限電壓會下降。
最後我們將比較非晶矽(a-Si:H)、非晶矽化鍺(a-SiGe:H)、多晶矽(poly-Si)薄膜電晶體在熱退火處理之後的各種特性,經使用退火處理後發現退火的溫度越高則元件的電性越差。


In this thesis, electrical characteristics of the top-gate staggered TFTs (thin-film transistors) with the Schottky barrier source/drain (S/D) had been studied. The Sb/Al dual metals were evaporated onto channel layer, e.g. a-Si1-xGex:H, or poly-Si, of TFT , where Sb metal was intentionally used as dopant of channel layer, and the electrical characteristics of the obtained TFTs had been compared and analyzed.
For the Schottky barrier S/D (SB-S/D) top-gate a-Si1-xGex:H TFTs, the experimental results indicated that a thinner channel layer could be used to obtain the better current-voltage characteristics of a TFT. Also, the effects of Ge content of a-Si1-xGex:H channel layer and annealing process on the performances of TFTs had been investigated . It was found the device drain current and effective electron mobility would increase, and threshold voltage would decrease with the increasing of Ge content in a-Si1-xGex: H channel. Also, the electrical characteristics of these TFTs became poorer after annealing process.
The electrical characteristics of the SB-S/D top-gate poly-Si TFTs had been also studied. It was found that the obtained poly-Si TFTs had the significantly better electrical characteristics than those of a-Si1-xGex:H TFTs.


CONTENTS
ABSTRACT……………………………………………………….……Ⅰ
CONTENTS……………………………………………….……………Ⅱ
TABLE CAPTIONS……………………………………….…………....Ⅳ
FIGURE CAPTIONS…………………………………….………….….Ⅴ
Chapter 1 INTRODUCTION…………...……………………..…….…1
Chapter 2 SB-S/D TOP-GATE a-Si1-xGex:H TFT……………….……..3
2-1 Fabrication Processes……………………………...…….…...3
2-2 Theory……………………………………………....………12
2-3 Results and Discussion………...……..….………...….…….15
2-3.1 Electrical characteristics……………………...…...15
2-3.2 Effect of Ge content……………….…….…….….20
2-3.3 Effect of annealing.…………….……………...….26
Chapter 3 SB-S/D Poly-Si TFT…………...…....……………….….…33
3.1 Fabrication Processes…….………..…...…………..….33
3-2 Results and Discussion……..………...……………..…38
3-2.1 Electrical characteristics……………...…..….38
Chapter 4 CONCLUSION…………………...………...…..……….....41
REFERENCES…………………………...…………………..…………43


[1] T .J. King and K. C. Saraswat, “Low-Temperature (<500℃) Fabrication of Poly-Si Thin-Film Transistors, “IEEE Electron Device Lett., vol. 13, no.6,pp.309, 1992
[2] Japanese Technology Evaluation Center, “Display technologies in Japan”,June1992.*Source://http://itri.Loyola.edu/dsply_jp/toc.htm
[3] K. T-Y. Kung and R. Reif, “Comparison of Thin-Film Transistors at Low Temperature ( < 600℃ ) on As-deposited and Amorphized Polycrystalline Si, “ J. Appl. Phys. vol. 61, no. 4, pp.1638, 1987.
[4] M. J Thomson., N.M. Johnson, M. D. Moyer, and R. Lujan, “Thin-film transistors on a-Si:H”, IEEE Trans. Electron Devices, vol.29, pp.1643-1646, 1982.
[5] Street, R. A., and M. J. Thompson, “Electronic States at the Hydrogenated Amorphous Silicon Silicon Nitride Interface,” Appl. Phys. Lett., vol. 45, pp. 769 , 1984.
[6] M. Lecontellec, F. Maurice. J.Richard. B. Vinouze, and F. Richou, J. Non-Cryst. Solids, vol. 97/ 98. pp.287, 1987.
[7] H. Fukui, F. Minoru, and H. Koichiro, “Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers”, Jpn. J. Appl. Phys., vol.36, pp.4147-4150,1977.

[8] S. A. Rishton, K Ismail., J. O.Chu, and K. Chan, “A MOS Transistor with Schottky Source/Drain Contacts and a Self-Aligned Low-Resistance T-Gate”, Microelectronic Engineering, vol. 35, pp. 361-363, 1997.
[9] C. Wang, J. P. Snyder, J. R. Tucker, “Sub-40 nm Pt-Si Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors,” Appl. Phys. Lett., vol. 74, pp. 1174, 1999.
[10] M. Nishika, and T. Asano, “Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts,” Jpn. J. Appl. Phys., vol, 37, pp.1295, 1998.
[11] Q. T. Zhao, F. Klinkhammer, M. Dolle, L. Kappius, and S. Mantal, “A Novel Silicide Nanopatterning Method for the Fabrication of Ultra-Short Channel Schottky-Tunneling MOSFETs,” Microelectronic Engineering, vol. 50, pp. 133-138, 2000.
[12] T. J. King, and K. C. Saraswat, “Polycrystalline Silicon-Germanium Thin-Film Transistors,” IEEE Trans. on Electron Devices, vol. 41, pp. 1581-1591, 1994.
[13] J. S. Chou, W. J. Sah, S. C. Lee, T. C. Chang, and J. C. Wang, “Microcrystalline Silicon Deposited by Grow Discharge Decomposition of Heavily Diluted Silane”, Material Chemistry and Physics, vol. 32, pp. 273-279, 1992.
[14] K. C. Hsu, H. Chang, C.S. Hong, and H.L. Hwang, “The Study on Microstructure by NMR, FTIR, Raman,, Conductivity, and Optical Bandgap in Hydrogenated Amorphous Silicon Prepared by Novel Fabrication Methods”, Mat. Res. Soc. Symp. Proc., vol. 258, pp.69-74, 1992.
[15] J. Kanicki, E. Hasan, D.F Kotecki., T. Takamori, and J.H. Griffith, ”Properties and Application of Undoped Hydrogenated Microcrystalline Silicon Thin Films”, Mat. Res. Soc. Symp. Proc., vol. 149, pp. 173-179, 1989.
[16] M.Hack, M.S. Shur, and J.G. Shaw, “Physical Model for Amorphous-Silicon Thin Film Transistor and Their Implementation in a Circuit Simulation Program ”,IEEE Trans. Electron. Devices, vol. 36, no. 12, pp. 2753-2769, 1989.
[17] S.C. Jain, “Germainium-Silicon Strained Layers and Heterostructures”, Academic Press. Inc., 1994.
[18] T. Takeshita, H. Kurhara, H. Ohshima, I. Yudasaka, and S. Morozumi, “Completely Integrated a-Si/a-SiC Heterojunction Contact-Type Linear Image Senaor with Poly-Si TFT drivers,” in Society for Inf. Display Int. Symp., Dig. Tech. Papers, vol. 20, pp. 255-258, 1989.
[19] G. Sarcona, M. K. Hatalis, and A. Catalano, “Amorphous Silicon and Silicon-Germanium Thin-Film Transistors formed by ion-implantation”, Mat, Res. Soc. Symp., vol. 297, pp. 907, 1993.

QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關論文
 
1. 李秀窈,「歐洲人權概述」,認識歐洲,第9 卷,民國90年3月,頁73-77。
2. 宋國誠,「人權問題與美國和中共的外交關係」,美國月刊,第5卷第10期,民國80年2月,頁63-74。
3. 姜義華,「從抗爭到妥協: 人權論戰的困境」,二十一世紀,第8 卷,民國80年12月,頁32-38。
4. 張國書,「西方與亞洲在人權觀念上的對抗?淺介國際人權法概念中的普遍性原則與文化相對主義」,新世紀智庫論壇,第八卷,民國88年12月,頁65-72。
5. 鄧中堅,吳孟峰,「剖析柯林頓政府的人權政策」,美歐月刊,第9卷第8期,民國83年8月,頁19-33。
6. 鈴木敬夫,「人權的尊重和抵抗主義--東西抵抗權論的各種形態和課題」,中國研究,第3卷第3期,民國86年6月,頁2-6。
7. 陳秀容,「近代人權觀念的轉變:一個社會生態觀點的分析」,人文及社會科學集刊,第9卷第2期,民國86年6月,頁101-132。
8. 陳俊宏,「人權與民主(1):共生或互斥﹖」,東吳政治學報,第11卷,民國89年9月,頁107-142。
9. 高宣揚,「論後現代主義人權論述的基本策略」,東吳政治學報,第6卷,民國85年9月,頁39-72。
10. 柴松林,「人權、人權基礎與人權譜系的擴增」,新世紀智庫論壇,第11卷,民國89年9月,頁103-110。
11. 李明峻,「政府間國際人權組織」,新世紀智庫論壇,第4 卷,民國87年11月,頁15-21。
12. 石之瑜,「現實主義以外的人權外交」,美國月刊,第6卷第10期,民國80年10 月,頁34-43。