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研究生:賈國揚
研究生(外文):Kuo-Yang Chia
論文名稱:大面積矽偵測器的製程改良與元件設計
論文名稱(外文):Studies of Process Improvement and Device Design for Large-Area Silicon Detector
指導教授:洪志旺
指導教授(外文):Jyh-Wong Hong
學位類別:碩士
校院名稱:國立中央大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文出版年:2003
畢業學年度:91
語文別:英文
論文頁數:70
中文關鍵詞:最佳化高電壓粒子偵測器矽偵測器防護圈低漏電流
外文關鍵詞:leakage currentbreakdown voltagestripfield plateguard ringoptimalsilicon detector
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本論文的主要目的是希望能藉由製程條件的改善與元件結構的改良提昇大面積矽偵測器的特性。為了降低漏電流及提高崩潰電壓,本論文探討偵測器的背面製程對元件特性的影響,並且證實利用磷摻雜的多晶矽外質去疵技術可以減少元件內部的缺陷,使元件特性獲得明顯的改善。
另外,在元件結構方面也藉由模擬軟體與實驗測試鍵(test-key)結果的協助,獲得最佳的相關元件構造參數,這些參數包括合適的氧化層厚度、接面深度、正面電極延伸長度及防護圈的配置等等。


In order to obtain a large-area silicon detector with good performances, such as low leakage current, high breakdown voltage and high reliability, the process improvement and structure design for a large-area silicon strip detector had been studied in this thesis.
Firstly, an overview including fundamental considerations, operation principles, and basic processing has been given, and accordingly the required structure and performance of the detector were summarized. Then a lot of methods to reduce leakage current and furthermore increase breakdown voltage of the device by means of optimized structure and improved processing were presented. With the measured results of test-keys, the simulated device structure had been verified to have the good performances.

A single-sided silicon strip detector with area of 1.12 cm2 and having an average leakage current reduced from 410 down to about 210 nA per diode strip after employing a backside phosphor-doped polysilicon gettering process at 985 ℃ had been obtained. So, it is possible to minimize the device leakage current with the well-developed gettering process.
The experimental results of test-keys not only verified the simulation data but also provided the guidelines to obtain an optimum device structure with specified length of field-plate, spacing between two strips, and lateral radius of curvature of the strip corners.


AbstractⅢ
Table CaptionsⅣ
Figure CaptionsⅤ
Chapter 1 INTRODUCTION1

Chapter 2 FUNDAMETAL CONSIDERATIONS AND FABRICATION PROCESSES6
2.1 Fundamental Considerations……………………………………6
2.1.1 Material…………………………………………………………6
2.1.2 Structures………………………………………………………8
2.1.3 Noise……………………………………………………………11
2.2 Device Design……………………………………………………12
2.3 Conventional Fabrication Processes……… ………………13

Chapter 3 DEVICE PROCESS AND STRUCTURE DESIGN to IMPROVE PERFORMANCE22
3.1 Process Improvements…………………………………………22
3.1.1 Backside process……………………………………………22
3.1.2 Thermal budget………………………………………………24
3.1.3 Gettering techniques………………………………………24
3.1.4 Metallization………………………………………………26
3.1.5 Contact area…………………………………………………26
3.2 Device Design…………………………………………………27
3.2.1 Field-plate…………………………………………………27
3.2.2 Guard-ring arrangement……………………………………30
3.2.3 Combination of field-plate and guard-ring effect…31
3.3 Summaries………………………………………………………31

Chapter 4 TEST-KEYS50
4.1 Gated Diodes…………………………………………………50
4.2 Field-Plate………………………………………………… 52
4.3 Multiple Guard-Rings………………………………………52
4.4 Corner Effect…………………………………………………53
4.5 Summaries………………………………………………………54

Chapter 5 CONCLUSION62

REFERENCES 63


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