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研究生:陳嵩奇
研究生(外文):Sung-chi Chen
論文名稱:石英微結構對表面接觸角與潤濕性影響之研究
論文名稱(外文):Investigation of the effects of quartz nanostructures on surface contact angle and surface wettability
指導教授:洪銘聰洪銘聰引用關係
指導教授(外文):Ming-tsung Hung
學位類別:碩士
校院名稱:國立中央大學
系所名稱:機械工程學系
學門:工程學門
學類:機械工程學類
論文出版年:2013
畢業學年度:102
語文別:中文
論文頁數:130
中文關鍵詞:奈微米結構接觸角石英潤濕性
外文關鍵詞:micro/nano-structurescontact anglequartzwettability
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隨著半導體科技的興起發展,越來越多材料逐漸被應用於半導體製程中。石英由於其特殊的壓電、絕緣、可透光等性質,在生醫與微機電元件皆可看到其相關應用。而在這些元件中,為了避免雜質、微粒、殘留液體等因素影響元件的使用與量測,其表面的疏水性、遲滯性與自潔效果為一個值得探討的議題。因此本研究將藉由鉻金屬薄膜做為蝕刻遮罩覆蓋於石英晶圓上,利用濕蝕刻方式於石英晶圓表面蝕刻出奈米針狀結構。並探討奈米結構對石英表面接觸角與潤濕性之影響。
本文以蒸鍍方式沉積奈米厚度之鉻非連續薄膜作為蝕刻遮罩,再以二氟化氫銨溶液為蝕刻液於石英表面進行蝕刻製作針狀結構。藉由掃描式電子顯微鏡觀察在不同蝕刻遮罩與蝕刻時間下,針狀結構外形及其分布情形,並利用文獻中各種模型進行分析。
研究結果顯示,所製作之結構由於薄膜成長不均勻,導致結構分布不均且存在許多缺陷。石英晶圓經由本文製程蝕刻後,其表面由原本之親水性轉變為疏水表面。靜態接觸角量測中,本文發現當結構分布密度較高時,試片接觸角與Cassie-Baxter模型所預測之接觸角相近;然而隨著結構分布密度的減少,試片接觸角將逐漸低於Cassie-Baxter模型之預測值,此乃液滴向結構間滲入所導致。此外,試片結構間因存在較多的缺陷,故在動態接觸角量測中,試片表面之前進角與靜態接觸角值相近;但由於缺陷影響,試片具有較低的後退角,導致試片上液滴遲滯角極大,使液滴在試片上難以滑動或滾動。經由本研究方法所製備之石英晶圓將具有高疏水及嚴重液滴遲滯現象之表面特性。

With the development of semiconductor technology, more materials are used in semiconductor manufacturing processes. Quartz has many special properties, such as piezoelectricity, insulation, and light transmission. It has been widely used in biomedical and MEMS components. In these components, in order to avoid the dust, particles and liquid effects on the operation or performance, the surface hydrophobicity, hysteresis, and self-cleaning properties may play important roles. In this study, we use chromium thin film as an etching mask on the Z-cut quartz wafers. Then, we use the wet etching process to make nanostructures on the quartz surface. Finally, we will discuss how the nanostructures affect surface contact angle and wettability.
In this paper, a nanometer thick non-continuous chromium layer is deposited on the quartz wafer as an etching mask. Ammonium bifluoride solution is used as the etchant to etch quartz to form nanoneedles on the quartz surface. The etched structures for different etching time are observed by scanning electron microscopy and compared with the models from literatures.
In the results, the distribution of structures is not uniform and there are many defects between structures due to the uneven growth of the thin film. The surface wettability switches from hydrophilic to hydrophobic. In the static contact angle measurement, we found that for high structure-density samples, the measured contact angles are close to the values predicted by the Cassie-Baxter model. However, with the reduction in the structure density, the contact angles are lower than that of the Cassie-Baxter model. The reason causes the phenomenon is the droplets penetration into the structures. In addition, the dynamic contact angle measurements show that the advancing contact angles of wafers are close to the static contact angle values, because there are lots of defects on the surface. However, due to the defects, the samples have lower receding angle, and thus the hysteresis on the surface is worse, causing that the droplet is hard to slide or roll on the surface. The quartz wafer prepared by the method of this study will have a high hydrophobicity, but serious surface hysteresis.

摘要 ..i
Abstract. ii
致謝.. iv
目錄.v
圖目錄.. viii
表目錄.. xiv
第一章 緒論1
1.1 研究背景 1
1.2 研究動機與目的 3
1.3 文獻回顧 5
1.3.1 石英晶體的非等向性蝕刻 5
1.3.2 表面改質與潤濕性探討. 7
1.4 論文架構. 12
第二章 理論基礎..13
2.1 石英晶格結構及特性.. 13
2.2 石英晶體之切向. 15
2.3 石英晶體之蝕刻技術.. 16
2.3.1 石英之濕式蝕刻.. 17
2.3.2 石英之乾式蝕刻.. 20
2.4 薄膜蒸鍍. 21
2.4.1 薄膜蒸鍍成長理論. 21
2.4.2 薄膜成長之形式.. 22
2.5 接觸角理論 24
2.5.1 楊氏方程式(Young’s equation).. 24
2.5.2 溫佐方程式(Wenzel equation) 25
2.5.3 卡西方程式(Cassie and Baxter equation). 27
2.5.4 卡西修正模型 28
2.6 遲滯效應. 30
2.6.1 動態接觸角(Dynamic contact angle).. 30
2.6.2 遲滯效應(Hysteresis effect) . 31
2.7 蓮花效應與花瓣效應.. 33
2.7.1 蓮花效應(Lotus effect) 33
2.7.2 花瓣效應(Petal effect). 34
第三章 研究方法..37
3.1 研究流程架構.. 37
3.2 實驗步驟. 39
3.2.1 晶圓清洗.. 40
3.2.2 蒸鍍金屬薄膜 40
3.2.3 蝕刻液之調配 41
3.2.4 試片之蝕刻. 41
3.3 量測與分析方法. 43
第四章 結果與討論.46
4.1 結構數據整理.. 46
4.2 數學模型分析.. 58
4.2.1 溫佐模型分析 58
4.2.2 卡西模型分析 62
4.2.3 卡西模型修正 63
4.3 靜態接觸角量測結果與分析.. 67
4.3.1 接觸面積25%以上之試片接觸角. 68
4.3.2 接觸面積25%以下試片之接觸角. 70
4.3.3 接觸面積10%以下之試片接觸角. 72
4.3.4 靜態接觸角整理與模型分析比較. 73
4.4 動態接觸角量測結果與分析.. 81
4.4.1 微量液滴法量測結果 81
4.4.2 旋轉平台法量測結果 90
第五章 結論與未來展望102
5.1 結論. 102
5.2 未來展望.. 103
參考文獻.104
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