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研究生:黃庭文
研究生(外文):Ting-Wen Huang
論文名稱:氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光檢測器之研究
論文名稱(外文):AlGaN/GaN heterojunction metal-semiconductor-metal photodetector
指導教授:李清庭
指導教授(外文):Ching-Ting Lee
學位類別:碩士
校院名稱:國立中央大學
系所名稱:光電科學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:中文
論文頁數:86
中文關鍵詞:氮化鎵氮化鋁鎵異質接面光檢測器蕭特基接觸
外文關鍵詞:GaNAlGaNheterojunctionPhotodetector
相關次數:
  • 被引用被引用:2
  • 點閱點閱:246
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  • 收藏至我的研究室書目清單書目收藏:0

本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵階變與漸變異質接面結構試片,對試片做X-射線繞射,霍爾量測等基本特性量測,與製作蕭特基二極體量測金屬與試片接觸的蕭特基位障及理想因子,最後製作金屬-半導體-金屬光偵測器。量測元件暗電流、照光電流響應及光頻譜響應等特性,並使用光學傳輸矩陣計算光通過元件的反射、穿透及吸收等參數,計算元件量子效率,同時分析其特性差異成因。


The Schottky type metal-semiconductor-metal (MSM) ultraviolet Photodetectors based on GaN/AlGaN heterostructure material systems are reported. The Schottky contacts were made with Au metal. The dark and illuminated current-voltage characteristics were studied.


第一章緒論………………………………………………………1
第二章元件工作原理與製作……………………………………3
2.1基本理論概述………………………………………………3
2.1.1 金屬-半導體接面理論…………………………………3
2.1.2蕭特基接面理論…………………………………………4
2.2光檢測器工作原理…………………………………………6
2.2.1 金屬-半導體-金屬光檢測器工作原理…………………6
2.3元件設計……………………………………………………7
2.3.1 磊晶結構………………………………………………8
2.3.2 元件結構………………………………………………9
2.3.3 蕭特基二極體元件製程………………………………9
2.3.4 金屬-半導體-金屬光檢測器製程……………………11
2.4量測技術原理………………………………………………12
2.4.1X射線繞射原理………………………………………12
2.4.2霍爾量測原理…………………………………………13
2.4.3歐傑電子能譜分析………………………………………13
2.4.4電容-電壓量測原理……………………………………13
2.4.5暗電流與光電流的直流量測原理………………………14
2.4.6光傳輸矩陣理論原理……………………………………16
第三章實驗設計與結果討論………………………………………19
3.1 實驗設計…………………………………………………19
3.2 實驗結果與討論…………………………………………20
3.2.1 X射線繞射量測………………………………………20
3.2.2 霍爾量測……………………………………………20
3.2.3歐傑電子能譜分析……………………………………22
3.2.4蕭特基二極體電壓-電流特性量測…………………22
3.2.5金屬-半導體-金屬光檢測器電壓-電流特性量測……23
3.2.6金屬-半導體-金屬元件暗電流衰減量測……………26
3.2.7金屬-半導體-金屬電容-電壓量測……………………28
第四章結論…………………………………………………………29
參考文獻………………………………………………………………33
圖……………………………………………………………………39
表……………………………………………………………………72


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