研究一內稟高電阻率半導體的磁電阻效應，可得出電阻率與電子及電洞漂移遷移率之間的關係。由此關係如測任意電導型式的試樣，即可同時得到電子及電洞的漂移遷移率。P型及n型的鍺單晶體經實驗求得電子與電洞的遷移率。

The magnetoresistive effect on an intrinsic, high-resistivity semiconductor is considered. A relationship between the resistivity and the drift mobilities of electrons and holes is derived. From this relation, the drift mobilities of both electrons and holes can be determined simultaneously in a single measurement using a single sample of either conductivity type. Both p-type and n-type germanium single crystals were measured. The mobilities of electrons and holes were determined.