CONTENTS
誌謝
中文摘要
英文摘要
口試合格証明
Chapter 1 Introduction
1.1 Reviews and backgrounds
1.2 Motivation
1.3 References
Chapter 2 The influence of NH3 plasma pretreatment on the properties of PECVD SioxNy on GaAs interface
2.1 Introduction
2.2 Experimental
2.3 Results and discussions
2.4 Summary
2.5 References
2.6 Figure captions
Chapter 3 Dielectric film properties of SioxNy layers
3-1 Introduction
3-2 Experimental
3-3 Results and discussions
3-4 Summary
3-5 References
3-6 Tables
Chapter 4 Interfacial properties of SioxNy on III-V compound semiconductors (GaAs & InP)
4-1 Introduction
4-2 Measurement procedures and theoretical descriptions
4-3 Results and Discussions of SioxNy on GaAs
4-4 Interfacial properties of SioxNy on InP
4-5 Origin and modeling of interface states for SioxNy on III-V compound semiconductors (GaAs & InP)
4-6 Summary
4-7 References
4-8 Figure captions
Chapter 5 Conclusion
5-1 Summary
5-2 Major contributions
5-3 Future works
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