臺灣博碩士論文加值系統

本論文以有機金屬化學氣相沉積法成長銻化鎵和銻化銦鎵在銻化鎵的基板
上,成長條件如: 成長溫度,成長壓力和五族/三族比將被詳細探討.而所成
長的晶膜將藉由光激發光光譜和 X 光繞射光譜,電子掃瞄顯微鏡,歐傑(
Auger)電子等測量研究其光電特性.銻化鎵磊晶成長於銻化鎵基板上, 其
表面形態可由電子掃瞄顯微鏡 (SEM)觀察之. 磊晶的品質可經由光激發光
光譜(PL)測量來判斷.最佳成長參數為:450 C,150 托耳和五族/三族比為
65.9.成長銻化銦鎵於銻化鎵基板上之的最佳成長參數如下 :450 C ,150
托耳和五族/三族比為 49 ,晶膜中固態銦之含量由X光繞射測量得到
為0.34. 此外,晶膜中固態銦之含量隨三甲基銦(TMIn), 和三甲基銻(
TMSb)莫耳分率改變的變化亦加以研究.銻化鎵/銻化銦鎵 應力量子井和超
晶格結構也成功地長在銻化鎵基板上. 能階受應力造成能量轉移放射出光
波長的改變,可從光激光譜清晰地看到.不同的雷射光入射能量以及不同的
測量溫度對能量轉移所造成之變化亦被討論轉移能量隨入射光的強度增強
而產生往高能量( 短波 長)的位置位移的現象. 相反地, 轉移能量隨測量
的溫度升高產生往低能量(長波長)的位置位移的現象.另外,十週期的應力
量子井長在n型基板上,其光激光譜及操作在不同溫度下的電流-電壓特性
亦被研究.

The metal organic chemical vapor deposition epitaxial
growth of GaSb and InGaSb on GaSb substrate are studied.
The growth condition,such as growth temperature, pressure, and
V/III ratio are detailed. Electrical and optical properties of
the MOCVD grown epilayers are characterized by
photoluminescence (PL) and X-ray diffraction patterns.
The surface morphologies and epitaxial quality of
GaSb epilayers grown on GaSb(100) substrates were
examined from Scanning Electron Micrography (SEM) and
photoluminescence (PL) measurements, respectively. The
optimum homo- epitaxial conditions :150 C, 150 torr and V/
III ratio 65.9. InGaSb epilayers were also grown on GaSb
(100) substrates with optimum growth conditions as:450 C 150
torr and V/III ratio 49. The indium solid composition
determined from X-ray diffraction measurement was 0.34.The
solid compositions varied with the molefractions of TMIn
and TMSb were observed. GaSb strained quantum well and
superlattice structures were successfully grown. The shift of
transition energies varied with excitation powers and
temperatures were observed from PL spectra The 10-period
MQWs structure has been grown on n-type GaSb(100) substrate.
The I-V characteristics of the structure measureed at various
temperatures were also studied.