本論文旨在探討鈦- 鎢合金層作為鋁與矽化鉑間之擴散障礙層，於熱處理
時之穩定性，而鋁/ 鈦- 鎢/ 矽化鉑接觸之蕭特基二極體( n 型矽基體)
以及p+ n或n+ p接面二極體將作為本文研究之用。我們可以利用二次離子
質譜儀(SIMS)、掃描式電子顯微鏡 (SEM)、片電阻以及電性之測量，來探
討其介面間之反應，約1500埃厚之鈦- 鎢薄膜，在氮氣爐管中退火時，可
以阻止鋁與矽化鉑層間之相互反應，直到 400℃ 30分鐘的退火。對於
鋁/ 鈦- 鎢/ 矽化鉑接觸之p+ n或n+ p接面二極體，即使經過 550℃ 30
分鐘的退火，仍能展現出一個非常好的電性。此外，當在鈦- 鎢合金層濺
鍍時混入氮氣能改善鈦- 鎢擴散障礙層的特性。

This layer of Ti-W alloy as an diffusion barrier between Al and
PtSi during thermal treatment has been investigated. The Al/Ti-
W/PtSi contacted Schottky diodes (n-Si) and junction diodes (n+
p and p+n) were employed for this study. The inter- facial
reaction was investigated by secondary-ion mass spect- roscopy,
sheet resistance measurement, scanning electron mic- roscopy,
and electrical measurements. The Ti-W film with a thickness of
1500o prevents Al-PtSi interaction up to 400℃ for 30 min
annealing in N2. For the Al/Ti-W/PtSi contacted p+n or n+p
junction diodes, fairly good electrical character- istics can
preserved even after 550℃ annealing for 30 min. In addition,
the Ti-W barrier properties can be improved by inco- rporation
of nitrogen during the sputter deposition of the Ti- W layer.