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MOSFET's operating in the subthreshold current region have many
advantages in neural network system implementations and
applications. In order to in vestigate MOS devices and circuits
whose components are operating in the subthreshold current
region for large-scale analog circuits, we must first build up
an efficient model based on the experimental data. By the
response surface methodology based on experiment design and
regression analysis, we can establish the quadratic model
between device performance response and input structure
parameters. This model can help us understand the variations of
MOSFET subthreshold current and thus the high-performance CMOS
analog curcuits using the subthreshold current characteristics
can be achieved.
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