臺灣博碩士論文加值系統

以直流濺射鍍膜系統,在氧化鎂基板上成長的釔鋇銅氧薄膜,經適當的退火
處理可擁有c軸方向及臨界溫度達84K的平坦薄膜o 這些成長所得之薄膜,
以光製版術及EDTA化學溶液蝕刻成兩種微橋, 再經0.94微米之紅外線脈衝
照射以研究熱輻射現象o在脈衝頻率2Hz的控制下,可得每單位入射功率354
伏特之響應o雜訊功率可估計為7.2 e -10 W/Hz0.5 o 在此實驗過程, 為
得到較佳的反應基板材料的選擇, 薄膜的品質, 電阻係數, 熱導, 偵測器
的形狀, 都必須給予適當的考量o

Thin films of YBaCuO (Y-123) have been made by dc magnetron
sputtering deposition on (100) Mgo substrates. THe experimental
results show that the films, with flatness oriented in c-axis
and a zero resistance temperature of 84K have been fabricated
by an in-situ growth technique. A GaAs light emission diode
with an 0.94 um wavelength was used as the light source to
study the bolometric effect. Two types of bolometers
(microbridge and meander) were made by photolithography with
ethylenediametetra acetic acid (EDTA) as the wet etching
solution. Measurement of the meander device on Mgo substrate
yielded the bolometric responsivity of approximately 354.7 V/W
, by illuminating a 2 Hz signal with 0.362 mW power. The noise
equivalent power of this device have been estimated as 7.2 e
-10 W/Hz0.5. Therefore, the detectivity is 1.04 e 9 cm Hz0.5/W.
In this experiment several parameters, such as bias current,
materials thermal coefficient of resistance and thermal
conductance, were considered for the purpose of obtaining the
best bolometric response.