由於非晶矽材料的高光感度及簡易製造，使得近來色光感測的研究變的
熱門。本論文嘗試以PECVD系統成長非晶矽異質接面可調式濾波器。基本
上它是由p-i-n光偵檢器組成的色光濾波器，利用矽對波長相依的吸收特
性造成短波長的光在透光接面的淺層即被吸收，而長波長的光可深入層
被吸收。　　改變空乏層（本質層）的厚度以尋求最佳的量子效率及頻率
響應，調變偏壓大小改變收集區的寬度，可得到可調式濾波光譜響應。

Recently, the color sensor using amarphous-silicon material has
been studied widely for its high photosensitivity and ease of
fabrication. This paper propose a method of PECVD System to
fabricate the amorphous silicon heterojunction filter with
wavelength tunability. Basically, this color filter is composed
of p-i-n photodetector. The wavelength dependence causes a very
shallow absorption of short-wavelength light and enables long-
wavelength light to penetrate deeply into the silicon. Changing
the intrinsic layer width to obtain better quantumn efficiency
and frequency response. Adjusting the applied voltage change
the width of collection region to get a tunable filtering
spectral response.