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Recently, the color sensor using amarphous-silicon material has been studied widely for its high photosensitivity and ease of fabrication. This paper propose a method of PECVD System to fabricate the amorphous silicon heterojunction filter with wavelength tunability. Basically, this color filter is composed of p-i-n photodetector. The wavelength dependence causes a very shallow absorption of short-wavelength light and enables long- wavelength light to penetrate deeply into the silicon. Changing the intrinsic layer width to obtain better quantumn efficiency and frequency response. Adjusting the applied voltage change the width of collection region to get a tunable filtering spectral response.
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