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Recently, the color sensor using amarphous-silicon material has
been studied widely for its high photosensitivity and ease of
fabrication. This paper propose a method of PECVD System to
fabricate the amorphous silicon heterojunction filter with
wavelength tunability. Basically, this color filter is composed
of p-i-n photodetector. The wavelength dependence causes a very
shallow absorption of short-wavelength light and enables long-
wavelength light to penetrate deeply into the silicon. Changing
the intrinsic layer width to obtain better quantumn efficiency
and frequency response. Adjusting the applied voltage change
the width of collection region to get a tunable filtering
spectral response.
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